SBT100-16JS SBT100-16JS Applications Schottky Barrier D

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SBT100-16JS SBT100-16JS Applications Schottky Barrier D

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Ordering number ENA0442
SBT100-16JS
SBT100-16JS
Applications
Schottky Barrier Diode (Twin Type Cathode Common)
160V, Rectifier
High frequency rectification (switching regulators, converters, choppers).
Features
Tj=150°C. forward voltage max=0.88V). Short reverse recovery time. switching noise. High reliability highly reliable planar structure. Attachment workability good Mica-less package.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IFSM Tstg 50Hz resistive load, Sine wave Tc=78°C 50Hz sine wave, cycle Conditions Ratings +150 +150 Unit
Electrical Characteristics Ta=25°C
Parameter Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Thermal Resistance Symbol Rth(j-c) Conditions IR=2mA, Tj=25°C* IF=5A, Tj=25°C* VR=160V, Tj=25°C* VR=10V, Tj=25°C* Junction-Case Smoothed Ratings 0.82 0.88 Unit
Note) Value element
SANYO Semiconductor products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest before usingany SANYO Semiconductor products described contained herein such applications. SANYO Semiconductor assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor products described contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82306 61506SD TB-00002384 A0442-1/3
SBT100-16JS
Package Dimensions unit 7525-001
10.0
Electrical Connection
Anode Anode
Cathode
16.0
14.0
0.75
Anode Cathode Anode SANYO TO-220ML(LS)
2.55
2.55
Represented
Forward Current,
Reverse Current,
Tj=1
50°C
Tj=15
125°C
100°C
75°C
IT10962
Forward Voltage, Average Forward Power Dissipation, PF(AV)
Average Reverse Power Dissipation, PR(AV)
PF(AV)
Reverse Voltage,
180° 360°
IT10963
PR(AV)
Sine wave
180° 360°
(1)Rectangular wave =300° (2)Rectangular wave =240° (3)Rectangular wave =180° (4)Sine wave =180°
Rectangular wave
360°
Rectangular wave
360°
Sine wave
(1)Rectangular wave =60° (2)Rectangular wave =120° (3)Rectangular wave =180° (4)Sine wave =180°
IT10964
Average Output Current,
Peak Reverse Voltage,
IT10965
A0442-2/3
SBT100-16JS
Interterminal Capacitance, (1)Rectangular wave =60° (2)Rectangular wave =120° (3)Rectangular wave =180° (4)Sine wave =180°
Rectangular wave
f=100kHz
Case Temperature,
360°
Sine wave
360°
180°
IT10966
Average Output Current,
Transient Thermal Resistance, Rth(j-c)
IFSM
Reverse Voltage,
IT10967
Rth(j-c)
Surge Forward Current, IFSM(Peak)
Current waveform 50Hz sine wave
20ms
0.001 70.01 ID01058
0.01
Time,
ID01041
Time,
Specifications SANYO Semiconductor products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Semiconductor Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor products (including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must exported without obtaining export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Semiconductor Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO Semiconductor believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information June, 2006. Specifications information herein subject change without notice.
A0442-3/3

SBT100-16JS SBT100-16JS Applications Schottky Barrier D

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