SB01-05C SB01-05C Applications Schottky Barrier Diode

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SB01-05C SB01-05C Applications Schottky Barrier Diode

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Ordering number ENA0406
SB01-05C
SB01-05C
Applications
Schottky Barrier Diode
50V, 100mA Rectifier
High frequency rectification (switching regulators, converters, choppers).
Features
forward voltage max=0.55V). Fast reverse recorvery time (trr max=10ns). switching noise. leakage current high reliability highly reliable planar structure.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IFSM Tstg 50Hz sine wave, cycle Conditions Ratings +125 +125 Unit
Electrical Characteristics Ta=25°C
Parameter Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance Symbol Rthj-a(1) Rthj-a(2) Mounted Cu-foiled area 16mm2!0.2mm glass epoxy board Conditions IR=50µA, Tj=25°C IF=100mA, Tj=25°C VR=25V, Tj=25°C VR=10V, f=1MHz IF=IR=10mA, Tj=25°C, specified Test Circuit. Ratings 0.55 Unit
Marking
SANYO Semiconductor products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest before usingany SANYO Semiconductor products described contained herein such applications. SANYO Semiconductor assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor products described contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71206 42506SB TA-100743 A0406-1/3
SB01-05C
Package Dimensions unit 7013A-004 Test Circuit
Duty10%
10µs
0.95
Anode Contact Cathode SANYO
0.05
1000
Ta=125°C
Forward Current,
ID00260
Reverse Current,
0.01
100°C
75°C
50°C
25°C
10mA
1.0mA
10mA
ID00261
Forward Voltage,
Average Forward Power Dissipation, PF(AV)
0.10
PF(AV)
Reverse Voltage,
f=1MHz
0.08
0.06
Rectangular wave
360°
Interterminal Capacitance,
0.14
(1)Rectangular wave =60° (2)Rectangular wave =120° (3)Rectangular wave =180° (4)Sine wave =180°
0.04
0.02
Sine wave
180°
0.02 0.04 0.06 0.08 0.10
360° 0.12
Average Output Current,
IT03696
Reverse Voltage,
ID00263
A0406-2/3
SB01-05C
IFSM
Current waveform 50Hz sine wave 20ms
Surge Forward Current, IFSM(Peak)
0.01
Time,
ID00264
Specifications SANYO Semiconductor products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Semiconductor Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor products (including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must exported without obtaining export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Semiconductor Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO Semiconductor believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information April, 2006. Specifications information herein subject change without notice.
A0406-3/3

SB01-05C SB01-05C Applications Schottky Barrier Diode

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