amHop Microelectronics orp. Dec. 2006 Dual hannel nhancement Mode
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M6610
amHop Microelectronics orp. Dec. 2006
Dual hannel nhancement Mode Field ffect Transistor
uper high dense cell design
8.5A
(ON)
ugged reliable. urface Mount ackage. rotected.
4.5V
OLUTE MAXIMUM ATINGS A=25 unless otherwise noted)
arameter Drain-S ource Voltage ate-S ource Voltage Drain urrent-C ontinuous ulsed
ymbol a=70
N-Channel
Unit
Drain-S ource Diode orward urrent Maximum ower Dissipation Operating unction torage Temperature ange
1.44
Thermal esistance, Junction-to-Ambient 62.5
M6610
ICAL CHAR ACTE TICS unless otherwise noted)
Parameter
ymbol
(th) (ON) ID(ON) CRSS
Condition
250uA 24V, 20V, 250uA =10V, =4.5V, 15V, 10V,
Unit
CHAR ACTE TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage
CHAR ACTE TICS
Gate Threshold Voltage Drain-S ource On-S tate esistance On-S tate Drain Current Forward Transconductance
DYNAMIC CHAR ACTE TICS
Input Capacitance Output Capacitance everse Transfer Capacitance =15V, =1.0MH
WITCHING CHAR ACTE TICS
Turn-On Delay Time Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge
tD(ON) tD(OFF)
15V, L=2.1 ohm, 10V, =15V, =8A,V =10V =15V, =8A,V =4.5V =15V, =10V
15.5 12.5
M6610
ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted)
Parameter
Diode Forward Voltage
Symbol
Condition
=1.7A
Unit
DRAIN-SOURCE DIODE CHARACTERISTICS
Notes a.Surface Mounted Board,t 10sec. b.Pulse Test:Pulse Width s,Duty Cycle c.Guaranteed design,not subject production testing.
VGS=10V VGS=4.5V
Drain Current(A)
Drain Current
VGS=4V
VGS=3.5V Tj=125
VGS=3V
VGS=2.5V
VDS, Drain-to-Source Voltage
VGS, Gate-to-Source Voltage
Figure Output Characteristics
Figure Transfer Characteristics
(ON) On-R tance Normalized
=4.5V =10V
(on)
=4.5V =10V
Drain urrent
unction emperature
igure On-R tance Drain urrent oltage
igure On-R tance Variation with Drain urrent Temperature
M6610
Normalized Drain-S ource reakdown oltage Normalized ate-S ource hres hold oltage
=250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 =250uA
unction emperature
unction emperature
igure hres hold ariation with emperature
igure reakdown oltage ariation with emperature
20.0
ource-drain current
10.0
(on)
ate-S ource Voltage
Diode orward oltage
igure On-R tance ate-S ource oltage
igure Diode orward oltage ariation with ource urrent
M6610
ource oltage
=15V
Capacitance (pF)
Ciss Coss Crss
VDS, Drain-to Source Voltage
otal harge
igure apacitance
igure harge
witching
Drain urrent
D(off) D(on)
=15V ,ID=7A =10V
0.03
=10V ingle ulse
tance
igure 11.s witching characteris tics
Drain-S ource oltage
igure Maximum perating Area
Normalized Transient
Thermal Resistance
0.05 0.02 0.01
(t)=r Datas heet Duty ycle, D=t1/t2
0.01 0.00001 0.0001
Single Pulse 0.001 0.01
1000
Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve
M6610
LINE DIME IONS
0.015X45
0.008 TYP.
0.05 TYP.
0.016 TYP.
MILLIME 1.35 0.10 4.80 3.81 5.79 0.41 1.75 0.25 4.98 3.99 6.20 1.27 0.053 0.004 0.189 0.150 0.228 0.016
0.069 0.010 0.196 0.157 0.244 0.050
M6610
SO-8 Tape Reel Data
SO-8 Carrier Tape
unit:
PACKAGE
6.40
5.20
2.10
(MIN)
12.0
1.75
0.05
0.05
0.05
SO-8 Reel
UNIT:
TAPE SIZE
REEL SIZE
12.4
16.8
12.75 0.15
0.15
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