Silicon Epitaxial Planar Transistor switching amplifier applications.
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9013
Silicon Epitaxial Planar Transistor switching amplifier applications. Especially suitable AF-driver stages power output stages. transistor subdivided into three groups, according current gain. complementary type transistor 9012 recommended. special request, these transistors manufactured different configurations.
Absolute Maximum Ratings Symbol Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range
Value
Unit
VCEO VEBO Ptot
+150
Valid provided that leads kept ambient temperature distance from case
SEMTECH ELECTRONICS LTD.
(Subsidiary Sino-Tech International Holdings Limited, company listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 17/06/2005
9013
Characteristics Tamb=25 Symbol Current Gain VCE=1V, IC=50mA Current Gain Group VCE=1V, IC=500mA Collector Cutoff Current VCB=31V Collector Emitter Breakdown Voltage IC=1mA Emitter Base Cutoff Current VEB=5.1V Collector Saturation Voltage IC=500mA, IB=20mA Base Saturation Voltage IC=500mA, IB=20mA Base Emitter Voltage VCE=1V, IC=50mA Gain Bandwidth Product VCE=5V, IC=10mA, f=50MHz Collector Base Capacitance VCB=10V, f=1MHz Thermal Resistance Junction Ambient
Min.
Typ.
Max.
Unit
ICBO V(BR)CEO IEBO VCE(sat) VBE(sat) CCBO RthA
0.75
Valid provided that leads kept ambient temperature distance from case
SEMTECH ELECTRONICS LTD.
(Subsidiary Sino-Tech International Holdings Limited, company listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 17/06/2005
9013
SEMTECH ELECTRONICS LTD.
(Subsidiary Sino-Tech International Holdings Limited, company listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 17/06/2005
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