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AN10405

Increased circuit efficiency, less required board space and saved money by replacing power transistors by low VCEsat (BISS) transistors

AN10405
Increased circuit efficiency, less required board space and saved money by replacing power transistors by low VCEsat (BISS) transistors
Rev. 01.00 - 06 January 2006 Application note
Philips Semiconductors
AN10405
Replacing power transistors by low VCEsat (BISS) transistors
Revision history Rev 01 Date 20060106 Description Initial document
Contact information
For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, please send an email to: sales.addresses@www.semiconductors.philips.com
Application note
Rev. 01.00 - 06 January 2006
Philips Semiconductors
AN10405
Replacing power transistors by low VCEsat (BISS) transistors
1. Introduction
2. Reduced power dissipation due to low saturation voltage
Table 1:
BISS transistors dissipate less power enabling to select smaller and cheaper packages
Power transistor BD132 SOT32 (TO-126) 2A 700 mV 1400 mW 20 BISS transistor PBSS5350S SOT54 (TO-92) 2A 300 mV 600 mW 100
More information on low VCEsat (BISS) transistors is given in the following application notes:
AN10116: Breakthrough In Small Signal - Low VCEsat (BISS) Transistors and their Applications AN10393: BISS transistors and MEGA Schottky rectifiers - improved technologies for discrete semiconductors
Application note
Rev. 01.00 - 06 January 2006
Philips Semiconductors
AN10405
Replacing power transistors by low VCEsat (BISS) transistors
- power transistors with 1 - 3 A rated collector current.
- power transistors with 4 - 5 A rated collector current. Table 19: - Table 24: show the most common parameters of these types for reference.
3. Common replacements
Many popular transistors are included in the cross reference table (Table 2:). Main cross reference data given in Table 3: - Table 18: are provided to confirm the selection. For SMD replacements these tables provide up to three alternatives with the same electrical but different thermal specifications. This enables to use the smallest package possible depending on the actual power dissipation. The BISS transistors in Table 2: are selected with focus on reducing the number of types. This implies that the provided replacement must not necessarily be the optimum solution with regard to the achievable power dissipation.
Application note
Rev. 01.00 - 06 January 2006
Philips Semiconductors
AN10405
Replacing power transistors by low VCEsat (BISS) transistors
4. General selection process
- For switching applications a high power dissipation capability of the package is often not necessary anymore since the heat generation is much lower using BISS transistors due to the very low VCEsat values. - An even lower power dissipation due to lower VCEsat values can be achieved by selecting BISS transistors with a lower VCEO value. For example if the application requires only 20 V breakdown voltage, a 20 V transistor should be used instead of a 40 V transistor. For most of the medium power and power transistors the types given in Table 19:- Table 24: should be sufficient. If not please look for data sheets of transistors starting with "PBSS" on the Internet or contact your nearest Philips sales office.
Application note
Rev. 01.00 - 06 January 2006
Philips Semiconductors
AN10405
Replacing power transistors by low VCEsat (BISS) transistors
5. Cross reference table for common replacements
Table 2:
original type
Cross reference table for replacing (medium) power by BISS transistors
replacement SOT54 SOT223 PBSS8110Z PBSS9110Z PBSS8110Z PBSS9110Z PBSS8110Z PBSS9110Z PBSS9110Z PBSS9110Z PBSS9110Z PBSS8110Z PBSS8110Z PBSS8110Z PBSS9110Z PBSS9110Z PBSS9110Z PBSS8110Z PBSS8110Z PBSS8110Z PBSS4350Z PBSS5350Z PBSS4350Z PBSS5350Z PBSS4350Z PBSS5350Z PBSS4350Z PBSS5350Z PBSS4350Z PBSS5350Z PBSS4540Z PBSS5540Z PBSS4540Z PBSS5540Z PBSS4540Z PBSS5540Z PBSS4350S PBSS5350S PBSS4350Z PBSS5350Z PBSS4540Z PBSS4350D PBSS5350D PBSS302ND SOT457 PBSS8110D PBSS9110D PBSS8110D PBSS9110D PBSS8110D PBSS9110D PBSS9110D PBSS9110D PBSS9110D PBSS8110D PBSS8110D PBSS8110D PBSS9110D PBSS9110D PBSS9110D PBSS8110D PBSS8110D PBSS8110D PBSS4350D PBSS5350D PBSS4350D PBSS5350D PBSS4350D PBSS5350D PBSS4350D PBSS5350D PBSS4350D PBSS5350D PBSS302ND PBSS302PD PBSS302ND PBSS302PD SOT23 PBSS8110T PBSS9110T PBSS8110T PBSS9110T PBSS8110T PBSS9110T PBSS9110T PBSS9110T PBSS9110T PBSS8110T PBSS8110T PBSS8110T PBSS9110T PBSS9110T PBSS9110T PBSS8110T PBSS8110T PBSS8110T cross ref. data Table 3 Table 11 Table 3 Table 11 Table 3 Table 11 Table 11 Table 11 Table 11 Table 3 Table 3 Table 3 Table 11 Table 11 Table 11 Table 3 Table 3 Table 3 Table 7 Table 15 Table 5 Table 13 Table 5 Table 13 Table 5 Table 13 Table 8 Table 16 Table 10 Table 18 Table 10 Table 18 Table 9 Table 17 Table 6 Table 14 Table 10
BC635 BC636 BC637 BC638 BC639 BC640 BCP51 BCP52 BCP53 BCP54 BCP55 BCP56 BCX51 BCX52 BCX53 BCX54 BCX55 BCX56 BD131 BD132 BD135 BD136 BD137 BD138 BD139 BD140 BD329 BD330 BD433 BD434 BD435 BD436 KSH200 KSH210 KSH31 KSH32 MJD148
PBSS8110S PBSS9110S PBSS8110S PBSS9110S PBSS8110S PBSS9110S PBSS9110S PBSS9110S PBSS9110S PBSS8110S PBSS8110S PBSS8110S PBSS9110S PBSS9110S PBSS9110S PBSS8110S PBSS8110S PBSS8110S PBSS4350S PBSS5350S PBSS4350S PBSS5350S PBSS4350S PBSS5350S PBSS4350S PBSS5350S PBSS4350S PBSS5350S
Application note
Rev. 01.00 - 06 January 2006
Philips Semiconductors
AN10405
Replacing power transistors by low VCEsat (BISS) transistors
original type
replacement SOT54 SOT223 PBSS4540Z PBSS5540Z PBSS4350S PBSS5350S PBSS8110S PBSS8110S PBSS8110S PBSS8110S PBSS9110S PBSS9110S PBSS9110S PBSS9110S PBSS4350S PBSS5350S PBSS4350Z PBSS5350Z PBSS8110Z PBSS8110Z PBSS8110Z PBSS8110Z PBSS9110Z PBSS9110Z PBSS9110Z PBSS9110Z PBSS4350Z PBSS5350Z PBSS4350D PBSS5350D PBSS8110D PBSS8110D PBSS8110D PBSS8110D PBSS9110D PBSS9110D PBSS9110D PBSS9110D PBSS4350D PBSS5350D PBSS8110T PBSS8110T PBSS8110T PBSS8110T PBSS9110T PBSS9110T PBSS9110T PBSS9110T SOT457 SOT23 cross ref. data Table 9 Table 17 Table 6 Table 14 Table 4 Table 4 Table 4 Table 4 Table 12 Table 12 Table 12 Table 12 Table 6 Table 14
MJD200 MJD210 MJD31 MJD32 TIP29 TIP29A TIP29B TIP29C TIP30 TIP30A TIP30B TIP30C TIP31 TIP32
Application note
Rev. 01.00 - 06 January 2006
Philips Semiconductors
AN10405
Replacing power transistors by low VCEsat (BISS) transistors
6. Basic cross reference data, NPN transistors
Table 3:
original type leaded type package Ptot BC635 BC637 BC639 SOT54 830 mW SMD BCP54 BCP55 BCP56 SOT223 1000 mW
replacement leaded BCX54 BCX55 BCX56 SOT89 850 mW
SMD PBSS8110D SOT457 600 mW
PBSS8110S SOT54 830 mW
PBSS8110T SOT23 480 mW
VCEO IC VCEsat(max) hFE(min)
100 V 1A 120 mV 150 100
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Table 4:
original type leaded type TIP29 TIP29A TIP29B TIP29C TO-220AB 2000 mW replacement leaded SMD
PBSS8110S
PBSS8110Z
PBSS8110T
package Ptot
SOT54 830 mW
SOT223 1000 mW
SOT23 480 mW
VCEO IC VCEsat(max) hFE(min)
100 V 1A 200 mV 150 80
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Application note
Rev. 01.00 - 06 January 2006
Philips Semiconductors
AN10405
Replacing power transistors by low VCEsat (BISS) transistors
Table 5:
original type leaded type package Ptot BD135 BD137 BD139 SOT32 (TO-126) 1250 mW replacement leaded PBSS4350S SOT54 830 mW SMD PBSS4350Z SOT223 1350 mW
PBSS4350D SOT457 600 mW
VCEO IC VCEsat(max) hFE(min)
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Table 6:
original type leaded type package Ptot TIP31 TO-220 2000 mW SMD MJD31 KSH31 TO-252 DPAK 1560 mW replacement leaded PBSS4350S SOT54 830 mW SMD PBSS4350Z SOT223 1350 mW
PBSS4350D SOT457 600 mW
VCEO IC VCEsat(max) hFE(min)
50 V 3A 290 mV 200 100
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Application note
Rev. 01.00 - 06 January 2006
Philips Semiconductors
AN10405
Replacing power transistors by low VCEsat (BISS) transistors
Table 7:
original type leaded type package Ptot BD131 SOT32 (TO-126) replacement leaded PBSS4350S SOT54 830 mW SMD PBSS4350Z SOT223 1350 mW
PBSS4350D SOT457 600 mW
VCEO IC VCEsat(max)
50 V 3A 90 mV 290 mV 200 100
hFE(min)
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Table 8:
original type leaded type package Ptot BD329 SOT32 (TO-126) replacement leaded PBSS4350S SOT54 830 mW SMD PBSS4350Z SOT223 1350 mW
PBSS4350D SOT457 600 mW
VCEO IC VCEsat(max) hFE(min)
50 V 3A 290 mV 200 100
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Application note
Rev. 01.00 - 06 January 2006
Philips Semiconductors
AN10405
Replacing power transistors by low VCEsat (BISS) transistors
Table 9:
original type SMD type package Ptot MJD200 KSH200 TO-252 DPAK 1400 mW replacement SMD PBSS4540Z SOT223 1350 mW
VCEO IC VCEsat(max)
40 V 5A 90 mV 150 mV 355 mV 300 250 100
hFE(min)
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Table 10:
original type leaded type package Ptot BD433 BD435 TO-126 SMD MJD148 TO-252 DPAK 1750 mW replacement SMD PBSS4540Z SOT223 1350 mW
PBSS302ND SOT457 600 mW
VCEO IC
VCEsat(max) hFE(min)
500 mV 85 50
150 mV 300 250
180 mV 300 250
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Application note
Rev. 01.00 - 06 January 2006
Philips Semiconductors
AN10405
Replacing power transistors by low VCEsat (BISS) transistors
7. Basic cross reference data, PNP transistors
Table 11:
original type leaded type BC636 BC638 BC640 SOT54 830 mW SMD BCP51 BCP52 BCP53 SOT223 1000 mW
replacement leaded BCX51 BCX52 BCX53 SOT89 850 mW
SMD PBSS9110D SOT457 550 mW
PBSS9110S SOT54 830 mW
PBSS9110T SOT23 480 mW
package Ptot
VCEO IC VCEsat(max) hFE(min)
100 V 1A 120 mV 150 100
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Table 12:
original type leaded type TIP30 TIP30A TIP30B TIP30C TO-220AB 2000 mW replacement leaded SMD
PBSS9110S
PBSS9110Z
PBSS9110T
package Ptot
SOT54 830 mW
SOT223 1000 mW
SOT23 480 mW
VCEO IC VCEsat(max) hFE(min)
100 V 1A 320 mV 150 125
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Application note
Rev. 01.00 - 06 January 2006
Philips Semiconductors
AN10405
Replacing power transistors by low VCEsat (BISS) transistors
Table 13:
original type leaded type BD136 BD138 BD140 SOT32 (TO-126) 1250 mW replacement leaded PBSS5350S SOT54 830 mW SMD PBSS5350Z SOT223 1350 mW
PBSS5350D SOT457 600 mW
package Ptot
VCEO IC VCEsat(max) hFE(min)
50 V 3A 100 mV 200
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Table 14:
original type leaded type package Ptot TIP32 TO-220 2000 mW SMD MJD32 KSH32 TO-252 DPAK 1560 mW replacement leaded PBSS5350S SOT54 830 mW SMD PBSS5350Z SOT223 1350 mW
PBSS5350D SOT457 600 mW
VCEO IC VCEsat(max) hFE(min)
50 V 3A 300 mV 200 100
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Application note
Rev. 01.00 - 06 January 2006
Philips Semiconductors
AN10405
Replacing power transistors by low VCEsat (BISS) transistors
Table 15:
original type leaded type package Ptot BD132 SOT32 (TO-126) replacement leaded PBSS5350S SOT54 830 mW SMD PBSS5350Z SOT223 1350 mW
PBSS5350D SOT457 600 mW
VCEO IC VCEsat(max)
50 V 3A 100 mV 300 mV 200 100
hFE(min)
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Table 16:
original type leaded type package Ptot BD330 SOT32 (TO-126) replacement leaded PBSS5350S SOT54 830 mW SMD PBSS5350Z SOT223 1350 mW
PBSS5350D SOT457 600 mW
VCEO IC VCEsat(max) hFE(min)
50 V 3A 300 mV 200 100
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Application note
Rev. 01.00 - 06 January 2006
Philips Semiconductors
AN10405
Replacing power transistors by low VCEsat (BISS) transistors
Table 17:
original type SMD type package Ptot MJD210 KSH210 TO-252 DPAK 1400 mW replacement SMD PBSS5540Z SOT223 1350 mW
VCEO IC VCEsat(max)
40 V 5A 120 mV 160 mV 375 mV 250 150 50
hFE(min)
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Table 18:
original type SMD type package Ptot BD434 BD436 TO-126 replacement SMD PBSS5540Z SOT223 1350 mW
PBSS302PD SOT457 600 mW
VCEO IC VCEsat(max) hFE(min)
40 V 5A 160 mV 250 150
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Application note
Rev. 01.00 - 06 January 2006
Philips Semiconductors
AN10405
Replacing power transistors by low VCEsat (BISS) transistors
8. Basic data on the BISS transistors
Table 19: 1 A / 100 V NPN BISS transistors
leaded type package Ptot PBSS8110S SOT54 830 mW SMD PBSS8110D SOT457 600 mW
PBSS8110T SOT23 480 mW
VCEO IC VCEsat(max)
hFE(min)
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Table 20: 3 A / 50 V NPN BISS transistors
leaded type package PBSS4350S SOT54 SMD PBSS4350Z SOT223 PBSS4350D SOT457
Ptot VCEO IC VCEsat(max)
830 mW 50 V 3A 90 mV 290 mV
1350 mW
hFE(min)
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Application note
Rev. 01.00 - 06 January 2006
Philips Semiconductors
AN10405
Replacing power transistors by low VCEsat (BISS) transistors
Table 21: 4 - 5 A / 40 V NPN BISS transistors
SMD type package Ptot PBSS4540Z SOT223 1350 mW
PBSS302ND SOT457 600 mW
VCEO IC VCEsat(max)
40 V 5A 90 mV 150 mV 355 mV
hFE(min)
Table 22: 1 A / 100 V PNP BISS transistors
leaded type package Ptot PBSS9110S SOT54 830 mW SMD PBSS9110D SOT457 550 mW
PBSS9110T SOT23 480 mW
VCEO IC VCEsat(max)
hFE(min)
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Application note
Rev. 01.00 - 06 January 2006
Philips Semiconductors
AN10405
Replacing power transistors by low VCEsat (BISS) transistors
Table 23: 3 A / 50 V PNP BISS transistors
leaded type package PBSS5350S SOT54 SMD PBSS5350Z SOT223 PBSS5350D SOT457
Ptot VCEO IC VCEsat(max)
830 mW 50 V 3A 100 mV mV
1350 mW
hFE(min)
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Table 24: 4 - 5 A / 40 V PNP BISS transistors
SMD type package Ptot PBSS5540Z SOT223 1350 mW
PBSS302PD SOT457 600 mW
VCEO IC VCEsat(max)
40 V 5A 120 mV 160 mV 375 mV
hFE(min)
Application note
Rev. 01.00 - 06 January 2006
Philips Semiconductors
AN10405
Replacing power transistors by low VCEsat (BISS) transistors
are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information - Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
9. Disclaimers
10. Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
Application note
Rev. 01.00 - 06 January 2006
Philips Semiconductors
AN10405
Replacing power transistors by low VCEsat (BISS) transistors
11. Contents
1. 2. 3. 4. 5. 6. 7. 8. 9. 10. Introduction .............................3 Reduced power dissipation due to low saturation voltage ........................3 Common replacements....................4 General selection process.................5 Cross reference table for common replacements............................6 Basic cross reference data, NPN transistors..8 Basic cross reference data, PNP transistors .12 Basic data on the BISS transistors.........16 Disclaimers ............................19 Contents...............................20
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