Description: NTE56019, NTE56020 NTE56021 TRIACs with repetitive peak b

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Description: NTE56019, NTE56020 NTE56021 TRIACs with repetitive peak b

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NTE56019 thru NTE56021 TRIAC,
Description: NTE56019, NTE56020 NTE56021 TRIACs with repetitive peak blocking 200V, 400V 800V respectively. These devices gate triggered from blocking conduction state either polarity applied voltage designed switching phase control applications such speed temperature modulation controls, lighting controls, static switching relays. triggering signal normally applied between Gate MT1. Features: Electrically Isolated TO220 Type Package Glass-Passivated Junctions Surge Capability: 400A Absolute Maximum Ratings: +25°C, 60Hz, with resistive load unless otherwise specified) Repetitive Peak Blocking Voltage (Note VDRM NTE56019 200V NTE56020 400V NTE56021 800V On-State Current (Conduction Angle 360°, -40° +125°C), IT(RMS) Non-Repetitive On-State Current (One Cycle), ITSM 60Hz 250A 50Hz 208A Fusing Current 8.3ms), 259A2s Peak Gate Current (Pulse Width 10µs Max), Peak Gate Dissipation (Pulse Width 10µs, IGTM), Gate Dissipation, PG(AV) 500mW Operating Junction Temperature Range, -40° +125°C Storage Temperature Range, Tstg -40° +125°C Thermal Resistance, Junction-to-Case, RthJC 1.5K/W Thermal Resistance, Junction-to-Ambient, RthJA 60K/W Lead Temperature (During Soldering, 1/16" from case, 10sec max), +230°C Note either polarity with reference terminal. Electrical Characteristics: +25°C unless otherwise specified)
Parameter Off-State Leakage Current On-State Voltage Symbol IDRM VTest Conditions VDRM, +25°C, Note VDRM, +125°C, Note IT(RMS) 25A, Note Unit
Note either polarity with reference terminal.
Electrical Characteristics (Cont'd): +25°C unless otherwise specified)
Parameter Gate Trigger Current Gate Trigger Voltage Holding Current Gate Controlled Turn-On Time Critical Rate-of-Rise Critical Rate-of-Rise, Off-State Symbol dv/dt dv/dtc Test Conditions 12V, -40° +125°C 12V, Quadrants III, Note Gate Open, Note Note 500mA, 0.1µs Rise Time VDRM, Gate Open, +125°C, Note VDRM, 25A, di/dt 13.5A/ms, Gate Unenergized, Note Unit V/µs V/µs
Note either polarity with reference terminal. Note either polarity gate voltage with reference electrode MT1. Note Initial On-State Current 400mA (DC).
.420 (10.67) .110 (2.79)
.147 (3.75)
Isolated .500 (12.7)
.250 (6.35) .500 (12.7)
.070 (1.78)
.100 (2.54)
Gate

Description: NTE56019, NTE56020 NTE56021 TRIACs with repetitive peak b

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