Features Self contained digital camera Monolithic sensor Mega pixel re

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amorphous silicon
Features Self contained digital camera Monolithic sensor Mega pixel resolution Pixel resolution Over 65,000 shades grey Ultra high sensitivity Electronic zoom Live images 3fps 7fps Compatible with standard image processing software Compatible with Windowsbased with slot Typical Applications Portable Radiography Densitometry Inspection Pipeline Inspection Portal Imaging Veterinary Medicine Foreign Material Detection Principle Operation Unique flat panel technology offers approach medical, industrial scientific imaging applications. Datasheets available upon request Description Amorphous Silicon X-Ray Detectors (XRD) work digital x-ray camera. detectors each based single solid state amorphous silicon sensor operating two-dimensional photodiode array. cameras well suited perform digital image acquisitions include drive readout processing electronics including x-ray interlock. X-rays converted light using different scintillators. information digitized (65,536 grey levels). 512-400 Family 512-400 family pixels resolution pitch forming 262,144 discrete pixels active area 204.8 204.8 mm2. base frame rate fps. 512-400 available different configurations allowing user apply x-ray energies from MeV. Different scintillators allow user customize their specific applications respective x-ray dosage. 16xx family 16xx family based single amorphous silicon substrate inch2. family three branches 1620, 1640 1680, presented their pixel resolution 200, pitch respectively. 1640 Branch major member 1640 branch 1640 AL1, camera having 1024 1024 pixels resolution pitch forming 1,048,576 discrete pixels active area 409.6 409.6 mm2. camera uses fast, Lanex® scintillator. frame rate fps. Higher frame rates available upon request. unique design 1640 allows user apply x-ray energies from MeV. 1680 Branch specific 1680 version, detector allows user collect image data pixels resolution forming 262,144 discrete pixels active area 409.6 409.6 mm2. lower resolution well suited perform image reconstruction applications. 1620 Branch With 1620 version, detector allows user collect image data 2048 2048 pixels resolution pitch forming 4,194,304 discrete pixels active area 409.6 409.6 mm2.
optoelectronics.perkinelmer.com
Amorphous Silicon
Sensor Specification Part Number Pixel Number Pixel Pitch Active Area 204.8 204.8 204.8 204.8 204.8 204.8 204.8 204.8 204.8 204.8 204.8 204.8 409.6 409.6 409.6 409.6 409.6 409.6 409.6 409.6 409.6 409.6 409.6 409.6 Photodiode Saturation Capacitance Charge Scintillator Lanex® fast Lanex fine Lanex fast Lanex fast Lanex fast Lanex fast Lanex fine Lanex fast Lanex fast Radiation Energy 30-200 30-200 30-200 30-200 30-350 keV-15 keV-15 keV-15 keV-15 keV-15 keV-15 keV-15
512-400 512-400 512-400 512-400 512-400 512-400
1640 (ES) 1024 1024 1640 (ES) 1024 1024 1640 (ES) 1024 1024 1640 (ES) 1024 1024
Digital X-ray Cameras-XRD 512-400
1620 1620
2048 2048 2048 2048
Electronics Specification Part Number Charge Amplifier ASIC 16-bit, kSps Saturation Charge ASIC Non-linearity <±1% <±1% <±1% <±1% <±1% <±1% <±1% <±1% <±1% <±1% <±1% <±1% Minimum Integration Time (143 (143 (143 (143
512-400 512-400 512-400 512-400 512-400 512-400 1640 (ES) 1640 (ES) 1640 (ES) 1640 (ES)
Digital X-ray Cameras-XRD 16xx
1620 1620
Detector Specification Part Number Dynamic Range (10%-90% FSR) <±2% <±2% <±2% <±2% <±2% <±2% <±2% <±2% <±2% <±2% <±2% <±2% Image Frame Rate 3.5-7 3.5-7 3.5-7 3.5-7 Detector Housing 629.5
512-400 512-400 512-400 512-400 512-400 512-400 1640 (ES) 1640 (ES) 1640 (ES) 1640 (ES)
Frame Grabber
1620 1620
Frame Grabber
Technical Specification Physical Dimension Compliant Addressing PCI-Power Supply (typ.) (max) 0.18 (typ.) (max) PCI-Bus Bandwidth typ. Operation System Windows 2000, Windows Windows
master Scatter-gather
MB/s Windows 4.0,
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cooled sensors
Features 363,000 picture elements (pixels) 1100x330 configuration square pixels 2-phase buried channel process On-chip amplifier noise high-speed readout Dynamic range greater than 25,000:1 On-chip temperature sensor Two-stage cooler integrated into package Hermetically sealed 100% fill factor 10MHz data rate Typical Applications Spectroscopy Fluorescence Microscopy Luminescence Protein Quantification Datasheet available upon request Description RA1133J full-frame sensor with reset capabilities designed specifically spectroscopy, biomedical imaging related scientific imaging applications. package array designed with integrated two-stage thermoelectric cooler. This enables device 40°C below ambient temperature, -15°C when compared room temperature. combination very noise dark current make RA1133J ideal low-light, high dynamic range, highresolution applications. imager structured with single-output register imaging columns. lateral reset drain located adjacent this readout register, which enables dumping accumulated charge from array. Two-phase clocks needed drive readout register, three-phase clocks needed drive imaging cells. array available 30-pin metal package with integrated cooler.
General Characteristics Parameter Symbol Min. Typ. 1100x330 24x24 26.4x7.92 QSAT VSAT PRNU DSNU >0.9999 1000 25,000:1 1200 >0.99995 fclock
Full well/read noise, mode RLoad mode mode -15°C Measured -15°C
Max.
Units
Format Pixel Size Imaging Area Dynamic Range Full Well Charge Saturation Voltage Dark Current Photo Response Uniformity Dark Signal Uniformity Charge Transfer Efficiency Output Amplifier Gain Operating Frequency Read Noise
Dynamic Range: Full Well Charge: Dark Current MPP: Read Noise:
KemV pA/cm2
µV/e10
Absolute Maximum Ratings Storage Temperature: -55°C min. 85°C max. Operating Temperature: min. 55°C max.
optoelectronics.perkinelmer.com
Cooled Sensors
Technical Specification Part Number Pixel Size 24x24 Image Area 26.4x7.92 Saturation Voltage typ. 1200 Dark Current pA/cm2 Dynamic Range >25,000:1 Read Noise 10e-
Format 1100x330
RA1133JAS-912
Dynamic Range: Dark Current MPP: Read Noise: Storage Temperature: Operating Temperature:
Full well/read noise, mode mode -15°C Measured -15°C -55°C min. +85°C max. min. 55°C max.
Quantum Efficiency
Cooled Sensor- pitch, 1100x330 pixel configuration Principle Operation major source dark current devices such these originates surface states Si-SiO2 interface. unique design process enables RA1133J "multi-pinned phase" mode operation. This helps eliminate dark current generation interface surface states. holding vertical clocks negative potential during integration horizontal signal readout, surface will depleted surface state will generate dark current.
Quantum Efficiency
1000 1100
Wavelength,
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cooled cameras
Features 3,214,848 picture elements (pixels) 2184 1472 configuration square pixels Interface Peltier cooling -30°C 25°C ambient 16-bit output depth with electrons noise typical binning (asymmetric) Hermetically sealed sensor head reduces risk contamination Varying readout rates (1250 max) 300-1000 spectral range Includes power supply software Typical Applications Protein Quantification Fluorescence Microscopy Luminescence Sequencing Description PerkinElmer Optoelectronics ColdBlueseries cooled camera systems offer scientific-grade technology integrated with latest camera electronics offer user unparalleled solution advanced imaging applications. Featuring Eastman Kodak KAF-3200ME imager, FD2114KNU offers pixel resolutions 2184 1472 (6.8 pixel size). modular sensor head design allows camera system customized with different sensors minimum design time. eliminate contamination moisture within sensor package, package that surrounds sensor been hermetically-sealed under vacuum. sensor head been sealed against light dust. camera supplied with Win32.dll, Windows drivers library, regulated power supply, cables necessary operation. FD2114 also features integrated Thermo-Electric (TE) cooler, which cools sensor -30°C. This reduction temperature allows almost 1000X reduction dark current. Additionally, Area Interest readout binning supported within camera.
General Characteristics Parameter Symbol Min. Typ. 2184 1472 14.85 10.26 QSAT 1000 eKeMax. Units
Format Pixel Size Imaging Area Noise (typical) Imager Full Well Interface Style Gain Settings Quantum Efficiency Spectral Range Exposure Time Binning Operating Temperature Storage Temperature
Windows registered trademark Microsoft.
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Cooled Cameras
Technical Specification Part Number Pixel Size Image Area Saturation Voltage typ. Dark Current pA/cm2 0.015 e-/pixel/ -35C Dynamic Range Read Noise
Format
FD2114KNU-011 Cooled Area 6.8µm 6.8µm 14.85mm 10.86mm
Dynamic Range: Dark Current MPP: Read Noise: Storage Temperature: Operating Temperature: Full well/read noise, mode mode -15°C Measured -15°C -55°C min. +85°C max. min. 55°C max.
minimum, typical unbinned
Quantum Efficiency
Cooled Camera Principle Operation Perkinelmer ColdBlue series incorporates high performance, high resolution area image sensors. Each pixel within sensor converts light into discrete charge packets, that then converted analog voltage. analog voltage then processed single channel sampled-and-held, raster order analog video data. Analog processing circuitry provides adjustable gain levels, allowing accomodation user's unique lighting application requirements. Once signal processed, then digitized 16-bit depth formatted ouput.
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buffered multiplexers
Description PerkinElmer Optoelectronics' CMOS buffered multiplexers offer ideal solution increasing demand noise amplification multiplexing applications. They designed interface with variety photosensitive arrays constructed from materials such amorphous silicon, gallium arsenide, germanium mercury cadmium telluride. These devices, available channel models, widely used medical, scientific, industrial applications read electrical signals generated x-ray, infrared, other radiation beyond direct detection range silicon. XL-1 Variable-Gain Multiplexers XL-1 Variable-Gain Multiplexers These advanced devices offer versatile solution increasing demand noise amplification multiplexing. They designed interface with linear photosensitive arrays, such those made gallium arsenide, germanium amorphous silicon, several special purpose infrared-sensitive materials. Each channel multiplexer consists charge amplifier series with separate buffered sample-and-hold paths correlated double sampling (CDS). broad range electrically selectable integrating capacitors provide accommodation charge packets from wide range sensor materials, pixel sizes exposure levels. XL-1 multiplexers available active channels, with 100µm channel-to-channel spacing. They offer dynamic range excess offset voltage, bidirectional readout, integrated calibration facilities.
Multiplexer Individual Channel Schematic
Integrator Reset
Video Buffer Sample
Reset
Reset Clock
Input
VoutR
Vref
Sample Clock
Video Buffer
VoutS
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image tubes
Industrial Surveillance 2/3" Tubes
Technical Specification Part Number Length Version Resistron Resistron Resistron Characteristics electrostatic focusing large dyn. range, gr.1 gr.2
Image Tubes
Diameter 19.8 19.8 19.8
Facepl. Temperature 30+/-2 30+/-2 30+/-2
Dark Current
Illumination
XQ1305 XQ1371 XQ1372
Industrial Surveillance Tubes
Technical Specification
High-Resolution Image Tubes
Part Number
Version Resistron Resistron
Characteristics large dyn. range, gr.1 gr.2
Length
Diameter 28.6 28.6
Facepl. Temperature 30+/-2 30+/-2
Dark Current
Illumination
XQ1292
Description image tubes special applications indispensable. camera tube superior solid-state image sensors high-resolution television systems with high frame-repetition rates. essential characteristics camera tubes, such absolute spectral sensitivity, resolution determined photoconducting material (target) electron optical parameters scanning electron beam. Resistron Tubes These universally applied cost image tubes. target material Antimony Trisulfide (Sb2S3) which provides good resolution integration quantum noise. Saticon Tubes Saticon Tubes with Selenium storage layer (SeAsTe) suited acquiring fast moving images, especially medical applications. Their typical characteristics: lag, excellent resolution signal uniformity. Newvicon Tubes Worldwide, these tubes have been taken production. offer Resistron tubes close equivalent replace Newvicons.
XQ1293
Special 2/3" Tubes
Technical Specification Part Number Length Diameter 19.8 19.8 19.8 Facepl. Temperature 30+/-2 30+/-2 30+/-2 Dark Current Illumination
Version Resistron Resistron Saticon
Characteristics radiation resistant radiation resistant radiation resistant
XQ1371SF XQ1372SF XQ1300SF
Special Tubes
Technical Specification Part Number Length Diameter 28.6 28.6 28.6 Facepl. Temperature 30+/-2 30+/-2 30+/-2 Dark Current Illumination
Version Resistron Resistron Resistron
Characteristics fiberoptic faceplate radiation resistant with reticles
XQ1292F XQ1292SF XQ1292RF
Medical Tubes
Technical Specification Part Number Length Diameter 28.6 28.6 28.6 28.6 28.6 Facepl. Temperature 30+/-2 30+/-2 30+/-2 30+/-2 30+/-2 Dark Current Illumination
Version
Characteristics
XQ1290 XQ1395 XQ1560 XQ1570 XQ1575
Resistron high sensitivity resolution Resistron Saticon Saticon Saticon high resolution line short high beam high beam with diode structure
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line scan imagers
Features 2500:1 dynamic range Ultra-low image Electronic exposure control Antiblooming control Square pixels with 100% fill factor Extended spectral range- 250-1000 Typical Applications High-Speed Document Reading Inspection Mail Sorting Production Measurement Position Sensing Spectroscopy Principle Operation Line scan sensors ideal imaging objects motion webs conveyors. Datasheet available upon request Description Line scan sensors ideal imaging objects motion webs conveyors. Applications range from inspection lead frames labels scanning mail parcels. P-Series Linear Photodiode Array Imagers P-series linear imagers, PerkinElmer combined best features high-sensitivity photodiode array detection highspeed, charge-coupled scanning offer uncompromising solution increasing demands advanced imaging applications. These high-performance imagers feature noise, high sensitivity, impressive charge-storage capacity, lag-free dynamic imaging convenient 1-output architecture. square contiguous pixels these imagers reproduce images with minimum information loss artifact generation, while their unique photodiode structure provides excellent blue response extending below ultraviolet. two-phase readout registers require only modest clocking voltages, achieve excellent charge-transfer efficiency. Additional electrodes provide independent control exposure antiblooming. Finally, high-sensitivity readout amplifiers provide large-output signal relax noise requirements camera electronics that follow. These versatile imagers available array lengths 2048 elements with either low-cost glass UV-enhanced fused silica windows. PerkinElmer Optoelectronics also maintains capabilities manufacture line scan imagers 8192 pixels combined with outputs 14µm pixels with existing designs. Contact PerkinElmer more information.
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Line Scan Imagers
Series
Technical Specification Part Number Pixel Count elements 1024 2048 Pixel Size 14x14 14x14 14x14 Number Outputs Spectral Response Range 250-1000 250-1000 250-1000 Pixel Data Rate Dynamic Range 2500:1 2500:1 2500:1 Horizontal Clocking typ.
RL0512P RL1024P RL2048P
Operating Temperature: min. +55°C max. Storage Temperature: -25°C min. +85°C max. Lag: Saturation Voltage:
Line Scan Imagers-P Series
Spectral Sensitivity Curve
Responsivity µJ/cm2) Wavelength (nm) Left Scale Right Scale
1050
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cmos photodiode arrays
Features photodiode aperture Extremely dark leakage current power dissipation Clock-controlled sequential readout rates Single-supply operation with HCMOS-compatible inputs Single shift register design Wide dynamic range Differential video output clock noise cancellation High saturation charge Antiblooming function crosstalk Line Reset Mode simultaneous reset photodiodes Wide spectral response: 1000 Polished fused silica window On-chip diodes (two) temperature monitoring Typical Applications Spectroscopy Colorimetry Datasheet available upon request L-series models available with pixel spacings lengths from 1024 pixels. models feature 2500 pixel aperture simplify alignment spectroscopic instruments. Description nearly thirty years, PerkinElmer Optoelectronics been leader development sensors spectroscopy. spectroscopy other instrumentation applications, large pixels, very high charge storage capacity, readout noise dark current, direct access charge packet critical delivering high dynamic range linear response demanded. CMOS photodiode array architecture meets these needs other sensor technology match. L-Series Visible Range Spectroscopy Arrays PerkinElmer Optoelectronics' L-series CMOS linear photodiode arrays offer high-quality, low-cost solution spectroscopy colorimetry applications 300-1000 range. L-Series family's combination high sensitivity, dark current, switching noise high saturation charge provides excellent dynamic range great flexibility setting integration time. L-series sensors consist linear array silicon photodiodes, each connected switch readout controlled integrated shift register scanning circuit. Under external clock control, shift register sequentially enables each switches, directing charge associated photodiode output line. dummy output provides clock noise cancellation. L-series devices mounted ceramic side-brazed, 22-pin, dual-inline packages with ground polished fused silica windows pin-compatible with earlier PerkinElmer TB-series sensors.
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CMOS Photodiode Arrays
Series
Technical Specification Part Number Video Capacitance bias bias 10.2 15.4 28.7 Sensitivity C/J/cm2 2x10-4 2x10-4 2x10-4 2x10-4 4x10-4 4x10-4 4x10-4 Saturation Exposure nJ/cm2 Saturation Charge Dynamic Range 70,000 70,000 70,000 70,000 100,000 100,000 100,000 Dark Current typ.
RL1201 RL1202 RL1205 RL1210 RL1501 RL1502 RL1505
L-Series Linear CMOS Spectroscopy Sensor- pitch, aperture 128, 256, 1024 photodiode elements with center-to-center spacing 128, 256, photodiode elements with center-to-center spacing
Sensitivity Exposure/ Saturation Charge: Dark Current: Spectral Response Peak: Operating Temperature: Storage Temperature:
Measured video line bias average 600-700 includes window loss Maximum dark current average dark current Range: 300-1000 typ. min. 55°C max. -78°C min. +85°C max.
Center-to-center spacing: RL12XX, RL15XX,
Quantum Efficiency
Wavelength (nm) 1050
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imagers
PT1109AAQ-711 Features 1024 pixel stage Unidirectional operation data rate High dynamic range (>5000:1) Line rates Quantum efficiency pixel size >0.99995 horizontal, >0.9999 vertical maximum saturation exposure Typical Applications Semiconductor Inspection Wafer Inspection Sorting Applications Datasheets available upon request Description PT1109AAQ Time Delay Integration (TDI) imagers combine best features photodiode array detection operation offer uncompromising solution increasing demands high-speed imaging applications. 1109AAQ PT1109AAQ high-performance imager featuring unique µm-square pixel architecture. chip stages with 1024 pixels stage, allowing stable imaging both fast low-light applications. Eight extra stages present front sensor, allowing adequate dark balancing. Full well capacity sensor >400,000 electrons, readout noise electrons, allowing >5000:1 dynamic range.
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Imagers
Technical Specification
PT1109AAQ-71Pixel Count* Extra Stages* Pixel Size Number Directions Integration Stages** Extra Stages** Number Outputs Pixel Rate Line Output Rate (max.) 1024 active elements 13x13 18.1 100% >42% >400,000 electrons pixel >5000:1 >0.99995 (horizontal) >0.9999 (vertical) +/-10% 1000 µV/electron 55°C ceramic
Imagers-PT 1109AAQ
Pixel Fill Factor Quantum Efficiency Power Dissipation Well Capacity Noise Dynamic Range Qsat Photo Response Non-Uniformity (PRNU) Spectral Response Dark Current Sensitivity Operating Temperature Package Type
Operating Temperature: min. 50°C max. readout direction direction
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Features Self contained digital camera Monolithic sensor Mega pixel re

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