VBUS VBUS SENSE NTC2 VDSS 200V RDSon 25°C 208A 25°C Applicat

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VBUS VBUS SENSE NTC2 VDSS 200V RDSon 25°C 208A 25°C Applicat

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APTM20DAM08TG
VBUS VBUS SENSE NTC2
VDSS 200V RDSon 25°C 208A 25°C
Application motor control Switched Mode Power Supplies Power Factor Correction
Features
0/VBU NTC1
Power MOSFETs RDSon input Miller capacitance gate charge Avalanche energy rated Very rugged Kelvin source easy drive Very stray inductance Symmetrical design Lead frames power connections Internal thermistor temperature monitoring High level integration
Benefits Outstanding performance high frequency operation Direct mounting heatsink (isolated package) junction case thermal resistance Solderable terminals both power signal easy mounting profile RoHS compliant ratings 3000 Unit
VBUS
0/VBUS
VBUS SENSE
NTC2 NTC1
Absolute maximum ratings
Symbol VDSS RDSon
Parameter Drain Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate Source Voltage Drain Source Resistance Maximum Power Dissipation Avalanche current (repetitive repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy 25°C 80°C
25°C
These Devices sensitive Electrostatic Discharge. Proper Handing Procedures Should Followed. application note APT0502 www.microsemi.com
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APTM20DAM08TG
July, 2006
APTM20DAM08TG
ratings 25°C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Zero Gate Voltage Drain Current Drain Source Resistance Gate Threshold Voltage Gate Source Leakage Current
0V,VDS 200V 0V,VDS 160V
25°C
125°C
10V, 104A VDS,
±150
Unit
Dynamic Characteristics
Symbol Ciss Coss Crss Td(on) Td(off) Eoff Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate Source Charge Gate Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions 1MHz VBus 100V 208A Inductive switching 125°C VBus 133V 208A Inductive switching 25°C 15V, VBus 133V 208A, Inductive switching 125°C 15V, VBus 133V 208A,
14.4 4.66 0.29 1698 1858 1872 1972
Unit
Chopper diode ratings characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Forward Current Diode Forward Voltage
Test Conditions VR=200V 25°C 125°C 80°C
Unit
180A 360A 180A 180A 133V
di/dt 600A/µs
125°C 25°C 125°C 25°C 125°C
1.15
July, 2006 APTM20DAM08TG
Reverse Recovery Time
Reverse Recovery Charge
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APTM20DAM08TG
Thermal package characteristics
Symbol Characteristic RthJC VISOL TSTG Torque Junction Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Transistor Diode 2500 0.16 0.32 Unit °C/W
Isolation Voltage, terminal case min, isol<1mA, 50/60Hz
Heatsink
Temperature sensor (see application note APT0406 www.microsemi.com more information).
Symbol Characteristic Resistance 25°C 25/85 298.15
3952
Unit
Thermistor value
Thermistor temperature
Package outline (dimensions
DIMENSIO MARKED OLERENCED
application note APT0501 Mounting Instructions Power Modules www.microsemi.com
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APTM20DAM08TG
July, 2006
APTM20DAM08TG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration 0.18 Thermal Impedance (°C/W) 0.16 0.14 0.12 0.08 0.06 0.04 0.02 0.05 0.0001 0.001 0.01 Single Pulse
0.00001
rectangular Pulse Duration (Seconds) Voltage Output Characteristics 1400
VGS=15V 8.5V 7.5V 6.5V
Transfert Characteristics Drain Current
TJ=25°C J=125°C TJ=-55°C ID(on)xRDS(on)MAX 250µs pulse test duty cycle
1200 Drain Current 1000
Drain Source Voltage RDS(on) Drain Current Drain Current
Normalized GS=10V 104A
VGS, Gate Source Voltage
RDS(on) Drain Source Resistance
Drain Current Case Temperature
VGS=10V
VGS=20V
Drain Current
July, 2006 APTM20DAM08TG
Case Temperature (°C)
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APTM20DAM08TG
RDS(on), Drain Source resistance (Normalized) Breakdown Voltage Temperature BVDSS, Drain Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 Junction Temperature (°C) Threshold Voltage Temperature VGS(TH), Threshold Voltage (Normalized) Drain Current Case Temperature (°C) Capacitance Drain Source Voltage 100000 Capacitance (pF)
Ciss
resistance Temperature Junction Temperature (°C) Maximum Safe Operating Area
VGS=10V 104A
1000
limited RDSon
100µs
Single pulse TJ=150°C TC=25°C
10ms 100ms
1000 VDS, Drain Source Voltage
VGS, Gate Source Voltage
Gate Charge Gate Source Voltage D=208A DS=40V =25°C Gate Charge (nC)
July, 2006
VDS=100V
10000
Coss
VDS=160V
1000
Crss
VDS, Drain Source Voltage
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APTM20DAM08TG
APTM20DAM08TG
Delay Times Current d(on) td(off) (ns) Drain Current
VDS=133V RG=2.5 J=125°C L=100µH
Rise Fall times Current
DS=133V G=2.5 J=125°C L=100µH
d(off) (ns)
d(on)
Drain Current
Switching Energy Current Switching Energy (mJ) Eoff Drain Current Operating Frequency Drain Current IDR, Reverse Drain Current Frequency (kHz) Drain Current
DS=133V D=50% G=2.5 J=125°C C=75°C VDS=133V RG=2.5 TJ=125°C L=100µH
Switching Energy Gate Resistance
VDS=133V ID=208A TJ=125°C L=100µH
Eoff
Eoff (mJ)
Eoff
Gate Resistance (Ohms) Source Drain Diode Forward Voltage 1000 =150°C =25°C
Hard switching
July, 2006
VSD, Source Drain Voltage
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APTM20DAM08TG
Microsemi reserves right change, without notice, specifications information contained herein

VBUS VBUS SENSE NTC2 VDSS 200V RDSon 25°C 208A 25°C Applicat

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