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omponents 20736 Marilla Street Chatsworth MJE13003A Features


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omponents 20736 Marilla Street Chatsworth
MJE13003A
Features
Capable 1.25Watts Power Dissipation. Collector-current 1.5A Collector-base Voltage 700V Operating storage junction temperature range: -55OC +150
Silicon Plastic-Encapsulate Transistor
Electrical Characteristics 25OC Unless Otherwise Specified
Symbol Parameter Collector-Emitter Breakdown Voltage (IC=10mAdc, Collector-Base Breakdown Voltage (IC=1000uAdc, Emitter-Base Breakdown Voltage =1000uAdc, IC=0) Collector Cutoff Current (VCB=700Vdc, Collector Cutoff Current (VCE =400Vdc,IB Emitter Cutoff Current (VEB =9.0Vdc, IC=0) Current Gain (IC=0.5Adc, CE=5.0Vdc) Current Gain (IC=1.5mAdc, CE=5.0Vdc) Collector-Emitter Saturation Voltage (IC=1000mAdc, =250mAdc) Base-Emitter Saturation Voltage (IC=1000mAdc, =250mAdc) Base-Emitter Voltage =2000mAdc) Trans istor Frequency (IC=100mAdc, CE=10Vdc, f=1.0MHz) Fall Time CC=100V,IC=1.0 A,IB1=I 2=0.2A Storage Time 1000 1000 Units uAdc uAdc uAdc
CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO IEBO
CHARACTERISTICS
hFE(1) hFE(2) VCE(sat) VBE(sat)
BASE COLLECTOR EMITTER
SMALL-SIGNAL CHARACTERISTICS
www.mccsemi.com
Revision: 2006/03/16

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