64M-BIT EQUAL SECTOR FLASH MEMORY GENERAL FEATURES 8,388,608 stru

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64M-BIT EQUAL SECTOR FLASH MEMORY GENERAL FEATURES 8,388,608 stru

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MX29LV065B
64M-BIT EQUAL SECTOR FLASH MEMORY
GENERAL FEATURES 8,388,608 structure hundred twenty-eight Equal Sectors with 64KB each combination sectors erased with erase suspend/resume function Thirty-two Sector Groups Provides sector group protect function prevent program erase operation protected sector group Provides chip unprotected function allow code changing Provides temporary sector group unprotected function code changing previously protected sector groups Single Power Supply Operation volt read, erase, program operations Latch-up protected 250mA from write inhibit equal less than 2.5V Compatible with JEDEC standard Pinout software compatible single power supply Flash Extra 128-byte sector security Feature factory locked identifiable, customer locked
PERFORMANCE High Performance Fast access time: 90/120ns Fast program time: 7us/byte, 42s/chip (typical) Fast erase time: 0.9s/sector, 45s/chip (typical) Power Consumption active read current: (typical) 5MHz standby current: 200nA (typical) Minimum 100,000 erase/program cycle 20-years data retention SOFTWARE FEATURES Erase Suspend/ Erase Resume Suspends sector erase operation read data from program data another sector which being erased Status Reply Data# polling Toggle bits provide detection program erase operation completion Support Command Flash Interface (CFI) HARDWARE FEATURES Ready/Busy# (RY/BY#) Output Provides hardware method detecting program erase operation completion Hardware Reset (RESET#) Input Provides hardware method reset internal state machine read mode input Provides accelerated program capability PACKAGE 48-pin TSOP Pb-free devices RoHS Compliant RoHS Compliant devices recommeded design
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CONFIGURATION
TSOP
RESET# RY/BY# VI/O
MX29LV065B
DESCRIPTION SYMBOL A0~A22 Q0~Q7 RESET# RY/BY# VI/O NAME Address Input Data Inputs/Outputs Chip Enable Input Write Enable Input Output Enable Input Hardware Reset Pin, Active Read/Busy Output +3.3V single power supply Hardware Acceleration Input/Output buffer (2.7V~3.6V) this input should tied directly Ground Connected Internally
LOGIC SYMBOL
A0-A22 Q0-Q7
RY/BY# RESET#
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BLOCK DIAGRAM
RESET#
WRITE CONTROL INPUT LOGIC HIGH VOLTAGE MACHINE (WSM) PROGRAM/ERASE STATE
X-DECODER
MX29LV065B FLASH ARRAY ARRAY
STATE REGISTER
ADDRESS LATCH A0-A22 BUFFER
SENSE AMPLIFIER
Y-DECODER
Y-PASS GATE
SOURCE COMMAND DATA DECODER
DATA COMMAND DATA LATCH
PROGRAM DATA LATCH
Q0-Q7
BUFFER
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Table SECTOR (GROUP) STRUCTURE
Sector SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 SA19 SA20 SA21 SA22 SA23 SA24 SA25 SA26 SA27 SA28 SA29 SA30 SA31 SA32 SA33 SA34 SA35 SA36 SA37 8-bit Address Range hexadecimal) 000000-00FFFF 010000-01FFFF 020000-02FFFF 030000-03FFFF 040000-04FFFF 050000-05FFFF 060000-06FFFF 070000-07FFFF 080000-08FFFF 090000-09FFFF 0A0000-0AFFFF 0B0000-0BFFFF 0C0000-0CFFFF 0D0000-0DFFFF 0E0000-0EFFFF 0F0000-0FFFFF 100000-10FFFF 110000-11FFFF 120000-12FFFF 130000-13FFFF 140000-14FFFF 150000-15FFFF 160000-16FFFF 170000-17FFFF 180000-18FFFF 190000-19FFFF 1A0000-1AFFFF 1B0000-1BFFFF 1C0000-1CFFFF 1D0000-1DFFFF 1E0000-1EFFFF 1F0000-1FFFFF 200000-20FFFF 210000-21FFFF 220000-22FFFF 230000-23FFFF 240000-24FFFF 250000-25FFFF
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Sector SA38 SA39 SA40 SA41 SA42 SA43 SA44 SA45 SA46 SA47 SA48 SA49 SA50 SA51 SA52 SA53 SA54 SA55 SA56 SA57 SA58 SA59 SA60 SA61 SA62 SA63 SA64 SA65 SA66 SA67 SA68 SA69 SA70 SA71 SA72 SA73 SA74 SA75 SA76 SA77
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8-bit Address Range hexadecimal) 260000-26FFFF 270000-27FFFF 280000-28FFFF 290000-29FFFF 2A0000-2AFFFF 2B0000-2BFFFF 2C0000-2CFFFF 2D0000-2DFFFF 2E0000-2EFFFF 2F0000-2FFFFF 300000-30FFFF 310000-31FFFF 320000-32FFFF 330000-33FFFF 340000-34FFFF 350000-35FFFF 360000-36FFFF 370000-37FFFF 380000-38FFFF 390000-39FFFF 3A0000-3AFFFF 3B0000-3BFFFF 3C0000-3CFFFF 3D0000-3DFFFF 3E0000-3EFFFF 3F0000-3FFFFF 400000-40FFFF 410000-41FFFF 420000-42FFFF 430000-43FFFF 440000-44FFFF 450000-45FFFF 460000-46FFFF 470000-47FFFF 480000-48FFFF 490000-49FFFF 4A0000-4AFFFF 4B0000-4BFFFF 4C0000-4CFFFF 4D0000-4DFFFF
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Sector SA78 SA79 SA80 SA81 SA82 SA83 SA84 SA85 SA86 SA87 SA88 SA89 SA90 SA91 SA92 SA93 SA94 SA95 SA96 SA97 SA98 SA99 SA100 SA101 SA102 SA103 SA104 SA105 SA106 SA107 SA108 SA109 SA110 SA111 SA112 SA113 SA114 SA115 SA116 SA117
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8-bit Address Range hexadecimal) 4E0000-4EFFFF 4F0000-4FFFFF 500000-50FFFF 510000-51FFFF 520000-52FFFF 530000-53FFFF 540000-54FFFF 550000-55FFFF 560000-56FFFF 570000-57FFFF 580000-58FFFF 590000-59FFFF 5A0000-5AFFFF 5B0000-5BFFFF 5C0000-5CFFFF 5D0000-5DFFFF 5E0000-5EFFFF 5F0000-5FFFFF 600000-60FFFF 610000-60FFFF 620000-62FFFF 630000-63FFFF 640000-64FFFF 650000-65FFFF 660000-66FFFF 670000-67FFFF 680000-68FFFF 690000-69FFFF 6A0000-6AFFFF 6B0000-6BFFFF 6C0000-6CFFFF 6D8000-6DFFFF 6E0000-6EFFFF 6F8000-6FFFFF 700000-70FFFF 710000-71FFFF 720000-72FFFF 730000-73FFFF 740000-74FFFF 750000-75FFFF
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Sectpr SA118 SA119 SA120 SA121 SA122 SA123 SA124 SA125 SA126 SA127 8-bit Address Range hexadecimal) 760000-76FFFF 770000-77FFFF 780000-78FFFF 790000-79FFFF 7A0000-7AFFFF 7B0000-7BFFFF 7C0000-7CFFFF 7D0000-7DFFFF 7E0000-7EFFFF 7F0000-7FFFFF
Note: sector groups bytes size.
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Sector Group Protection/Unprotected Address Table
Sector Group SA0-SA3 SA4-SA7 SA8-SA11 SA12-SA15 SA16-SA19 SA20-SA23 SA24-SA27 SA28-SA31 SA32-SA35 SA36-SA39 SA40-SA43 SA44-SA47 SA48-SA51 SA52-SA55 SA56-SA59 SA60-SA63 SA64-SA67 SA68-SA71 SA72-SA75 SA76-SA79 SA80-SA83 SA84-SA87 SA88-SA91 SA92-SA95 SA96-SA99 SA100-SA103 SA104-SA107 SA108-SA111 SA112-SA115 SA116-SA119 SA120-SA123 SA124-SA127 A21-A17 00000 00001 00010 00011 00100 00101 00110 00111 01000 01001 01010 01011 01100 01101 01110 01111 10000 10001 10010 10011 10100 10101 10110 10111 11000 11001 11010 11011 11100 11101 11110 11111
Note: sector groups 256K bytes size.
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Table OPERATION-1 Mode Select Device Reset Standby Mode Output Disable Read Mode Write (Note1) Temporary Sector-Group Unprotect Sector-Group Protect (Note2) Chip Unprotect (Note2) Accelerated Program Notes: sectors will unprotected ACC=Vhv. Q0~Q7 input (DIN) output (DOUT) pins according requests command sequence, sector protection, data polling algorithm. address. Sector Address, A6=L, A1=H, A0=L Sector Address, A6=H, A1=H, A0=L DIN, DOUT DIN, DOUT DIN, DOUT RESET# Vcc±0.3V Vcc±0.3V Address Data (I/O) Q0~Q7 HighZ HighZ HighZ DOUT
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OPERATION-2 Item Control Input (Note1) Read Silicon Manufacturer Code Read Silicon Read Indicator (Q7) Security Sector Notes: Sector unprotected code:00h. Sector protected code:01h. Factory locked code: 90h. Factory unlocked code: 10h. address. (Note2) Q0~Q7
Sector Lock Status Verification
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WRITE COMMANDS/COMMAND SEQUENCES write command device, system must drive Vil, Vih. command cycle, address latched later falling edge WE#, data latched earlier rising edge WE#. Figure illustrates timing waveform write command, Table defines valid command sets device. System allowed write invalid commands defined this datasheet. Writing invalid command will bring device undefined state.
REQUIREMENTS READING ARRAY DATA Read array action read data stored array. While memory device powered been reset, will automatically enter status read array. microprocessor wants read data stored array, drive (device enable control pin) (Output control pin) Vil, input address data read into address same time. After period read cycle (Tce Taa), data being read will displayed output microprocessor access. Vih, output will tri-state, there will data displayed output all. After memory device completes embedded operation (automatic Erase Program), will automatically return status read array, device read data address array. process erasing, device receives Erase suspend command, erase operation will stopped temporarily after period time more than Tready1 device will return status read array. this time, device read data stored address except sector being erased array. status erase suspend, user wants read data sectors being erased, device will output status data onto output. Similarly, program command issued after erase suspend, after program operation completed, system still read array data address except sectors erased. device needs issue reset command enable read array operation again order arbitrarily read data array following situations: program erase operation, programming erasing failure causes high. device auto select mode mode. situations above, reset command issued, device read array mode system must issue reset command before reading array data.
ACCELERATED PROGRAM OPERATION accelerated program improve programming performance compared with byte program. applying pin, device will enter accelerated program draw current more than from pin. Removing from will device back normal operation (not accelerated).
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RESET# OPERATION Driving RESET# period more than will reset device back read mode. device program erase operation, reset operation will take most period Tready1 device return read array mode. Before device returns read array mode, RY/BY# remains (busy status). When RESET# held GND±0.3V, device consumes standby current(Isb).However, device draws larger current RESET# held within GND±0.3V. recommended that system reset signal RESET# flash memory, that flash memory will reset during system reset allows system read boot code from flash memory.
SECTOR GROUP PROTECT OPERATION When sector group protected, program erase operation will disabled these sectors. MX29LV065B provides methods sector group protection. Once sector group protected, sector group remains protected until next chip unprotect, temporarily unprotected asserting RESET# Vhv. Refer temporary sector group unprotect operation further details. first method applying RESET# pin. Refer Figure timing diagram Figure algorithm this method. other method asserting pins, with Vil. protection operation begins falling edge terminates rising edge. Contact Macronix details.
CHIP UNPROTECT OPERATION MX29LV065B provides methods chip unprotect. chip unprotect operation unprotects sectors within device. recommended protect sectors before activating chip unprotect mode. sector groups unprotected when shipped from factory. first method applying RESET# pin. Refer Figure timing diagram Figure algorithm operation. other method asserting pins, with (see Table unprotect operation begins falling edge terminates rising edge. Contact Macronix details.
TEMPORARY SECTOR GROUP UNPROTECT OPERATION System apply RESET# place device temporary unprotect mode. this mode, previously protected sectors programmed erased just unprotected. devices returns normal operation once removed from RESET# previously protected sectors again protected.
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AUTOMATIC SELECT OPERATION When device Read array mode, erase-suspended read array mode mode, user issue read silicon command enter read silicon mode. After entering read silicon mode, user query several silicon continuously does need issue read silicon mode again. When Low, device will output Macronix Manufacture When high, device will output Device read silicon mode, issuing reset command will reset device back read array mode erase-suspended read array mode. Another enter read silicon apply high voltage with CE#, OE#, Vil. While high voltage discharged, device will automatically leave read silicon mode back read array mode erase-suspended read array mode. When Low, device will output Macronix Manufacture When high, device will output Device
VERIFY SECTOR GROUP PROTECT STATUS OPERATION MX29LV065B provides hardware sector protection against Program Erase operation protected sectors. sector protect status read through Sector Protect Verify command. This method requires pin, pins, CE#, OE#, pins, sector address pins. read data 01H, designated sector protected. Oppositely, read data 00H, designated sector protected.
SECURITY SECTOR FLASH MEMORY REGION security sectors locked upon shipping from factory, locked customer after shipping. Customer issue Security Sector Factory Protect Verify and/or Security Sector Protect Verify query lock status device. factory-locked device, security sector region protected when shipped from factory security silicon sector indicator "1". customer lockable device, security sector region unprotected when shipped from factory security silicon indicator "0".
Factory Locked: Security Sector Programmed Protected Factory factory locked device, security silicon region permanently locked after shipping from factory. device will have 16-byte security region. device 000000h 00000Fh.
Customer Lockable: Security Sector Programmed Protected Factory When security feature required, security region extra memory space. security silicon sector read, programmed address 000010h-00008Fh. Security silicon sector also protected methods. Note that once security silicon sector protected, there unprotect security silicon sector content longer altered. first method write three-cycle command Enter Security Region, then follow sector group protect algorithm illustrated Figure except that RESET# either Vhv. other method write three-cycle command Enter Security Region, then follow alternate method
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sector protect with Vhv. After security silicon locked verified, system must write Exit Security Sector Region, through power cycle, issue hardware reset return device read normal array mode.
DATA PROTECTION avoid accidental erasure programming device, device automatically reset read array mode during power Besides, only after successful completion specified command sets will device begin erase program operation. Other features protect data from accidental alternation described followed.
WRITE INHIBIT device refuses accept write command when less than 2.5V. This prevents data from spuriously altered. device automatically resets itself when lower than 2.5V write cycles ignored until greater than 2.5V. System must provide proper signals control pins after larger than 2.5V avoid unintentional program erase operation
WRITE PULSE "GLITCH" PROTECTION CE#, WE#, pulses shorter than treated glitches will regarded effective write cycle.
LOGICAL INHIBIT valid write cycle requires both with Vih. Write cycle ignored when either Vih, Vih, Vil.
POWER-UP SEQUENCE Upon power MX29LV065B placed read array mode. Furthermore, program erase operation will begin only after successful completion specified command sequences.
POWER-UP WRITE INHIBIT When WE#, held held during power device ignores first command rising edge WE#.
POWER SUPPLY DECOUPLING 0.1uF capacitor should connected between reduce noise effect.
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TABLE MX29LV065B COMMAND DEFINITIONS
Automatic Select Sector Device Factory 90/10 Security Protect Verify (Sector) 00/01 Sector Region Exit Security Sector Program Addr Data
Command Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
Read Mode Addr Data
Reset Mode
Silicon
Command Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
Chip Erase
Sector Erase Sector
Read
Erase Erase Suspend Resume
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RESET following situations, executing reset command will reset device back read array mode: Among erase command sequence (before full command completed) Sector erase time-out period Erase fail (while high) Among program command sequence (before full command completed, erase-suspended program included) Program fail (while high, erase-suspended program fail included) Read silicon mode Sector protect verify mode While device status program fail erase fail high), user must issue reset command reset device back read array mode. While device read silicon mode, sector protect verify mode, user must issue reset command reset device back read array mode. When device progress programming (not program fail) erasing (not erase fail), device will ignore reset command.
AUTOMATIC SELECT COMMAND SEQUENCE Automatic Select mode used access manufacturer device verify whether secured silicon locked whether sector protected. automatic select mode four command cycles. first unlock cycles, followed specific command. fourth cycle normal read cycle, user read address number times without entering another command sequence. reset command necessary exit Automatic Select mode back read array. following table shows identification code with corresponding address. Address Manufacturer Device Secured Silicon Sector Protect Verify (Sector address) Data (Hex) 90/10 00/01 Factory locked/unlocked Unprotected/protected Representation
There alternative method that shown Table which intended EPROM programmers requires address
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AUTOMATIC PROGRAMMING MX29LV065B provide user program function form Byte-Mode. long users enter right cycle defined Table.3 (including unlock cycles A0H), data user inputs will automatically programmed into array. Once program function executed, internal write state controller will automatically execute algorithms timings necessary program verification, which includes generating suitable program pulse, verifying whether threshold voltage programmed cell high enough repeating program pulse cells does pass verification. Meanwhile, internal control will prohibit programming cells that pass verification while other cells fail verification order avoid over-programming. With internal write state controller, device requires user write program command data only. Programming will only change status from "0". That say, impossible convert status from programming. Meanwhile, internal write verification only detects errors that successfully programmed "0". command written device during programming will ignored except hardware reset, which will terminate program operation after period time more than Tready1. When embedded program algorithm complete program operation terminated hardware reset, device will return reading array data mode. typical chip program time room temperature MX29LV065B less than seconds. When embedded program operation going, user confirm embedded operation finished following methods: Status progress*1 Finished Exceed time limit togging Stop toggling Toggling RY/BY#*2
status progress" means both program mode erase-suspended program mode. RY/BY# open drain output should weakly connected through pull-up resistor. When attempt made program protected sector, will output complement data continues toggle about less device returns read array state without programing data protected sector.
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CHIP ERASE Chip Erase erase data with "1". needs cycles write action first cycles "unlock" cycles, third configuration cycle, fourth fifth also "unlock" cycles, sixth cycle chip erase operation. During chip erasing, commands will accepted except hardware reset working voltage that chip erase will interrupted. After Chip Erase, chip will return state Read Array. When embedded chip erase operation going, user confirm embedded operation finished following methods: Status progress Finished Exceed time limit Togging Stop toggling Toggling Toggling Toggling RY/BY#
SECTOR ERASE Sector Erase erase data sector with "1". requires command cycles issue. first cycles "unlock cycles", third configuration cycle, fourth fifth also "unlock cycles" sixth cycle sector erase command. After sector erase command sequence issued, there timeout period 50us counted internally. During time-out period, additional sector address sector erase command written multiply. Once user enters another sector erase command, time-out period 50us recounted. user enters command other than sector erase erase suspend during time-out period, erase command would aborted device reset read array condition. number sectors could from sector sectors. After time-out period passing additional erase command accepted erase embedded operation begins. During sector erasing, commands will accepted except hardware reset erase suspend user check status chip erase. When embedded erase operation going, user confirm embedded operation finished following methods: Status Time-out period progress Finished Exceed time limit Togging Togging Stop toggling Toggling Toggling Toggling Toggling RY/BY#*2
status time-out period indicator. When Q3=0, device time-out period acceptible another sector address erased. When Q3=1, device erase operation only erase suspend valid. RY/BY# open drain output should weakly connected through pull-up resistor. When attempt made erase protected sector, will output complement data continues toggle 100us less device returned read array status without erasing data protected sector.
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SECTOR ERASE SUSPEND During sector erasure, sector erase suspend only valid command. user issue erase suspend command time-out period sector erasure, device time-out period will over immediately device will back erasesuspended read array mode. user issue erase suspend command during sector erase being operated, device will suspend ongoing erase operation, after Tready1 (<=20us) suspend finishes device will enter erase-suspended read array mode. User judge device finished erase suspend through BY#. After device entered erase-suspended read array mode, user read other sectors erase suspend speed Taa; while reading sector erase-suspend mode, device will output status. User judge sector erasing erase suspended. Status Erase suspend read erase suspended sector Erase suspend read non-erase suspended sector Erase suspend program non-erase suspended sector Data toggle Data Toggle Data Data toggle Data RY/BY#
When device suspended erasing, user execute command sets except sector erase chip erase, such read silicon sector protect verify, program, query erase resume.
SECTOR ERASE RESUME Sector erase resume command valid only when device erase suspend state. After erase resume, user issue another erase suspend command, there should interval between erase resume next erase suspend. user issue infinite suspend-resume loop, suspend-resume exceeds 1024 times, time erasing will increase.
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QUERY COMMAND COMMON FLASH INTERFACE (CFI) MODE MX29LV065B features mode. Host system retrieve operating characteristics, structure vendorspecified information such identifying information, memory size, byte/word configuration, operating voltages timing information this device mode. device enters Query mode when system writes Query command, 98H, address time device ready read array data. system read information addresses given Table reset command required exit mode back ready array mode erase suspend mode. system write Query command only when device read mode, erase suspend, standby mode automatic select mode. Table 4-1. mode: Identification Data Values (All values these tables hexadecimal) Description Query-unique ASCII string "QRY" Address (Byte Mode) Data
Primary vendor command control interface code Address primary algorithm extended query table Alternate vendor command control interface code (none) Address alternate algorithm extended query table (none)
Table 4-2. Mode: System Interface Data Values Description supply minimum program/erase voltage supply maximum program/erase voltage supply minimum program/erase voltage (none) supply maximum program/erase voltage (none) Typical timeout single word/byte write, Typical timeout maximum-size buffer write, Typical timeout individual block erase, Typical timeout full chip erase, Maximum timeout word/byte write, times typical Maximum timeout buffer write, times typical Maximum timeout individual block erase, times typical Maximum timeout chip erase, times typical (not supported) Address (Byte Mode) Data
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Table 4-3. Mode: Device Geometry Data Values Description Device size number bytes Flash device interface description (02=asynchronous x8/x16) Maximum number bytes buffer write (not support) Number erase regions within device Index Erase Bank Area [2E,2D] same-size sectors region [30, sector size multiples 256-bytes Index Erase Bank Area
Address (Byte Mode)
Data
Index Erase Bank Area
Index Erase Bank Area
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Table 4-4. Mode: Primary Vendor-Specific Extended Query Data Values Description Query Primary extended table, unique ASCII string, Address (Byte Mode) Major version number, ASCII Minor version number, ASCII Unlock recognizes address recognize, don't recognize) Erase suspend both read program) Sector protect sectors/group) Temporary sector unprotect (1=supported) Sector protect/Chip unprotect scheme Simultaneous operation (0=not supported) Burst mode (0=not supported) Page mode (0=not supported) Maximum acceleration supply supported), [D7:D4] volt, [D3:D0] 100mV Minimum acceleration supply supported), [D7:D4] volt, [D3:D0] 100mV Top/Bottom boot block indicator 02h=bottom 03h=top Data
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ABSOLUTE MAXIMUM STRESS RATINGS
Surrounding Temperature with Bias -65oC +125oC Storage Temperature -65oC +150oC Voltage Range -0.5 +4.0 RESET#, -0.5 +12.5 other pins. .-0.5 +0.5 Output Short Circuit Current (less than second) .200
OPERATING TEMPERATURE VOLTAGE
Commercial Grade Surrounding Temperature +70°C Industrial Grade Surrounding Temperature -40°C +85°C Supply Voltages range. +2.7
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CHARACTERISTICS
Symbol Iilk Iilk9 Iolk Icr1 Icr2 Description Input Leak Leak Output Leak Read Current(5MHz) Read Current(1MHz) Write Current 26mA 1.0uA 35uA 1.0uA 16mA 30mA CE#=Vil, OE#=Vih CE#=Vil, OE#=Vih CE#=Vil, OE#=Vih, WE#=Vil Isbr Standby Current Reset Current 0.2uA 0.2uA 15uA 15uA Vcc=Vcc max, other disable Vcc=Vccmax, Reset# enable, other disable Isbs Icp1 Icp2 Sleep Mode Current Accelerated Current, WP#/Acc (Word/Byte) Accelerated Current, pin, (Word/Byte) Input Voltage Input High Voltage Very High Voltage hardware Protect/Unprotect/Accelerated Program/Auto Select/Temporary Unprotect Voh1 Voh2 Output Voltage Ouput High Voltage Ouput High Voltage 0.85xVcc Vcc-0.4V 0.45V Iol=4.0mA Ioh1=-2mA Ioh2=-100uA -0.5V 0.7xVcc 11.5V 0.8V Vcc+0.3V 12.5V 15mA 30mA 0.2uA 15uA 10mA CE#=Vil, OE#=Vih, CE#=Vil, OE#=Vih, A9=12.5V Remark
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SWITCHING TEST CIRCUITS
0.1uF
TESTED DEVICE
+3.3V
DIODES=IN3064 EQUIVALENT
R1=6.2K R2=2.7K
Test Condition Output Load gate Output Load Capacitance,CL 30pF(90nS)/100pF(120nS) Rise/Fall Times In/Out reference levels :1.5V
SWITCHING TEST WAVEFORMS
3.0V
1.5V
1.5V
Test Points 0.0V INPUT
OUTPUT
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CHARACTERISTICS
Symbol Tcwc Tvcs Toes Toeh Toeh Tcep Tceph Twph Tbusy Tghwl Tghel Twhwh1 Twhwh2 Tbal Output enable hold time setup time hold time pulse width pulse width high pulse width pulse width high Program/Erase active time RY/BY# Read recover time before write Read recover time before write Program operation Sector erase operation Sector hold time Description Valid data output after address Valid data output after Valid data output after Data output floating after high Output hold time from earliest rising edge address, CE#, Read period time Write period time Command write period time Address setup time Address hold time Data setup time Data hold time setup time Chip enable Setup time Chip enable hold time Output enable setup time Read Toggle Data# Polling 45/50 35/50 90/120 90/120 90/120 45/50 45/50 90/120 90/120 35/50 Unit
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Figure COMMAND WRITE OPERATION
Tcwc
Toes Twph
Addresses
Data
Valid Address
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READ/RESET OPERATION
Figure READ TIMING WAVEFORMS
Toeh
Addresses
Valid
Outputs
HIGH
DATA Valid
HIGH
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CHARACTERISTICS Item Trp1 Trp2 Trb1 Tready1 Tready2 Description RESET# Pulse Width (During Automatic Algorithms) RESET# Pulse Width (NOT During Automatic Algorithms) RESET# High Time Before Read RY/BY# Recovery Time CE#, low) RESET# (During Automatic Algorithms) Read Write RESET# (NOT During Automatic Algorithms) Read Write Setup Speed Unit
Figure RESET# TIMING WAVEFORM
Trb1
CE#,
Tready1
RY/BY# RESET#
Trp1
Reset Timing during Automatic Algorithms
CE#,
RY/BY#
RESET#
Trp2 Tready2
Reset Timing during Automatic Algorithms
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ERASE/PROGRAM OPERATION
Figure AUTOMATIC CHIP ERASE TIMING WAVEFORM
Twhwh2
Twph
Tghwl
Last Erase Command Cycle
Read Status
Address
xxxh
xxxh
Progress Complete
Data
Tbusy
RY/BY#
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Figure AUTOMATIC CHIP ERASE ALGORITHM FLOWCHART
START
Write Data
Write Data
Write Data
Write Data
Write Data
Write Data
Data# Polling Algorithm Toggle Algorithm
Data=FFh
Auto Chip Erase Completed
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Figure AUTOMATIC SECTOR ERASE TIMING WAVEFORM
Read Status
Twhwh2
Twph
Tghwl
Last Erase Command Cycle
Tbal
Address
xxxh
Sector Address
Sector Address
Sector Address
Progress Complete
Data
Tbusy
RY/BY#
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Figure AUTOMATIC SECTOR ERASE ALGORITHM FLOWCHART
START
Write Data
Write Data
Write Data
Write Data
Write Data
Write Data Sector Address
Last Sector Erase Data# Polling Algorithm Toggle Algorithm
Data=FFh
Auto Sector Erase Completed
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REV. 1.5, JAN. 2007
MX29LV065B
Figure ERASE SUSPEND/RESUME FLOWCHART
START
Write Data
Toggle checking toggled Read Array Program
ERASE SUSPEND
Reading Programming Write Data
ERASE RESUME Continue Erase
Another Erase Suspend
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Figure AUTOMATIC PROGRAM TIMING WAVEFORMS
Twhwh1
Twph
Tghwl
Last Program Command Cycle
Last Read Status Cycle
Address
XXXh
Data
Status
DOUT
Tbusy
RY/BY#
Figure Accelerated Program Timing Diagram
(11.5V 12.5V)
WP#/ACC
250nS
250nS
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MX29LV065B
Figure CONTROLLED WRITE TIMING WAVEFORM
Tcep
Twhwh1 Twhwh2
Tceph
Tghwl
xxxh program xxxh erase
program sector erase chip erase
Address
Status Data
program erase program sector erase chip erase
Tbusy
DOUT
RY/BY#
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MX29LV065B
Figure AUTOMATIC PROGRAMMING ALGORITHM FLOWCHART
START
Write Data
Write Data
Write Data
Write Program Data/Address
Data# Polling Algorithm Toggle Algorithm next address
Read Again Data: Program Data?
Last Word Programed
Auto Program Completed
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SECTOR GROUP PROTECT/CHIP UNPROTECT
Figure Sector Group Protect/Chip Unprotect Waveform (RESET# Control)
150uS: Sector Protect 15mS: Chip Unprotect
Verification Data Status
RESET# valid address
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MX29LV065B
Figure 14-1. IN-SYSTEM SECTOR GROUP PROTECT WITH RESET#=Vhv
START
Retry count=0
RESET#=Vhv
Wait
Temporary Unprotect Mode
First CMD=60h?
Write Sector Address with [A6,A1,A0]:[0,1,0] data:
Wait 150us
Write Sector Address with [A6,A1,A0]:[0,1,0] data: Retry Count Read Sector Address with [A6,A1,A0]:[0,1,0] Retry Count=25?
Reset PLSCNT=1
Data=01h?
Device fail
Protect another sector? Temporary Unprotect Mode
RESET#=Vih
Write RESET
Sector Protect Done
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MX29LV065B
Figure 14-2. CHIP UNPROTECT ALGORITHMS WITH RESET#=Vhv
START
Retry count=0
RESET#=Vhv
Wait
Temporary Unprotect
First CMD=60h?
sectors protected?
Protect Sectors
Write [A6,A1,A0]:[1,1,0] data:
Wait 15ms
Retry Count
Write [A6,A1,A0]:[1,1,0] data:
Read [A6,A1,A0]:[1,1,0] Retry Count=1000? Data=00h?
Device fail
Temporary Unprotect
Write reset
Chip Unprotect Done
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MX29LV065B
Table TEMPORARY SECTOR GROUP UNPROTECT Parameter Trpvhh Tvhhwl Tvidr Trsp Description RESET# Rise Time Fall Time RESET# RESET# Condition Speed Unit
Figure TEMPORARY SECTOR GROUP UNPROTECT WAVEFORMS
Program Erase Command Sequence
Tvhhwl
RY/BY#
RESET#
Trpvhh
Trpvhh
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MX29LV065B
Figure TEMPORARY SECTOR GROUP UNPROTECT FLOWCHART
Start
Apply Reset# Volt
Enter Program Erase Mode
Mode Operation Completed
Remove Volt from Reset# RESET#
Completed Temporary Sector Unprotected Mode
Notes: Temporary unprotect protected sectors Vhv=11.5~12.5V. After leaving temporary unprotect mode, previously protected sectors again protected.
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MX29LV065B
Figure SILICON READ TIMING WAVEFORM
DATA Q0-Q7
DATA
DATA
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MX29LV065B
WRITE OPERATION STATUS
Figure DATA# POLLING TIMING WAVEFORMS (DURING AUTOMATIC ALGORITHMS)
Toeh
Address
Q0-Q6
Tbusy
Status Data
Complement
True
Valid Data
High
Status Data
Status Data
True
Valid Data
High
RY/BY#
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MX29LV065B
Figure Data# Polling Algorithm
Start
Read Q7~Q0 valid address (Note
Data#
Read Q7~Q0 valid address
Data# (Note FAIL
Pass
Notes: programming, valid address meas program address. erasing, valid address meas erase sectors address. should rechecked even Q5="1" because change simultaneously with
P/N:PM1082
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MX29LV065B
Figure TOGGLE TIMING WAVEFORMS (DURING AUTOMATIC ALGORITHMS)
Toeh
Address
Q6/Q2
Tbusy
Valid Status (first read)
Valid Status (second read)
Valid Data (stops toggling)
Valid Data
RY/BY#
Valid Address
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Figure Toggle Algorithm
Start
Read Q7-Q0 Twice
(Note
Toggle
Read Q7~Q0 Twice
Toggle
PGM/ERS fail Write Reset
PGM/ERS Complete
Notes: Read toggle twice determine whether toggling. Recheck toggle because stop toggling changes "1".
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RECOMMENDED OPERATING CONDITIONS
Device Power-Up timing illustrated Figure recommended supply voltages control signals device power-up. timing figure ignored, device operate correctly.
Vcc(min)
Tvcs
ADDRESS
Valid Address
DATA
High
Valid Ouput
WP#/ACC
Figure Timing Device Power-Up
Symbol
Parameter Rise Time Input Signal Rise Time Input Signal Fall Time
Min.
Max. 500000
Unit uS/V uS/V uS/V
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ERASE PROGRAMMING PERFORMANCE
LIMITS PARAMETER Chip Erase Time Sector Erase Time Erase/Program Cycles Chip Programming Time Byte Programming Time Accelerated Byte Program Time 100,000 MIN. TYP. MAX. UNITS Cycles
LATCH-UP CHARACTERISTICS
MIN. Input Voltage voltage difference with pins except pins Input Voltage voltage difference with pins Current pins included except Vcc. Test conditions: 3.0V, testing -1.0V -1.0V -100mA MAX. 13.5V 1.0V +100mA
TSOP CAPACITANCE
Parameter Symbol CIN2 COUT Parameter Description Control Capacitance Output Capacitance Input Capacitance Test VIN=0 VOUT=0 VIN=0 UNIT
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ORDERING INFORMATION
PART MX29LV065BTC-90 MX29LV065BTC-12 MX29LV065BTI-90 MX29LV065BTI-12 MX29LV065BTC-90G MX29LV065BTC-12G MX29LV065BTI-90G MX29LV065BTI-12G ACCESS TIME PACKAGE (ns) TSOP (Normal Type) TSOP (Normal Type) TSOP (Normal Type) TSOP (Normal Type) TSOP (Normal Type) TSOP (Normal Type) TSOP (Normal Type) TSOP (Normal Type) Note part recommended design Remark Commercial grade, Note Commercial grade, Note Industrial grade, Note Industrial grade, Note Commercial grade, Pb-free Commercial grade, Pb-free Industrial grade, Pb-free Industrial grade, Pb-free
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PART NAME DESCRIPTION
OPTION: Pb-free blank: normal SPEED: 90ns 120: 120ns TEMPERATURE RANGE: Commercial (0°CC Industrial (-40°CC
PACKAGE: TSOP REVISION: DENSITY MODE: 065: 64Mb, Equal Sector TYPE: 3.3V DEVICE: 29:Flash
P/N:PM1082
REV. 1.5, JAN. 2007
MX29LV065B
PACKAGE INFORMATION
P/N:PM1082
REV. 1.5, JAN. 2007
MX29LV065B
REVISION HISTORY
Revision Description Removed "Preliminary" Removed 63-CSP package information Datasheet format changed Data modification Added statement Added recommedation RoHS compliant devices Modified sector erase resume: 400uS Page P1,50 Date MAR/08/2005 JAN/09/2006 AUG/15/2006 AUG/24/2006 NOV/06/2006 JAN/24/2007
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Headquarters Macronix, Int'l Co., Ltd.
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64M-BIT EQUAL SECTOR FLASH MEMORY GENERAL FEATURES 8,388,608 stru

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