RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) Part Number

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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) Part Number

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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
Part Number Radiation Level IRHN7450 100K Rads (Si) IRHN3450 300K Rads (Si) IRHN4450 500K Rads (Si) IRHN8450 1000K Rads (Si) RDS(on) 0.45 0.45 0.45 0.45
IRHN7450 JANSR2N7270U 500V, N-CHANNEL
REF: MIL-PRF-19500/603 RAD-Hard HEXFET TECHNOLOGY
Part Number JANSR2N7270U JANSF2N7270U JANSG2N7270U JANSH2N7270U
SMD-1
International Rectifier's RAD-HardHEXFET® technology provides high performance power MOSFETs space applications. This technology over decade proven performance reliability satellite applications. These devices have been characterized both Total Dose Single Event Effects (SEE). combination Rdson gate charge reduces power losses switching applications such converters motor control. These devices retain well established advantages MOSFETs such voltage control, fast switching, ease paralleling temperature stability electrical parameters.
Features:
Single Event Effect (SEE) Hardened RDS(on) Total Gate Charge Simple Drive Requirements Ease Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
12V, 25°C Continuous Drain Current 12V, 100°C Continuous Drain Current Pulsed Drain Current 25°C dv/dt Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range PCKG. Mounting Surface Temp. Weight footnotes refer last page (for (Typical)
Pre-Irradiation
Units
W/°C
V/ns
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05/18/06
IRHN7450, JANSR2N7270U
Pre-Irradiation
Electrical Characteristics 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage DSS/T Temperature Coefficient Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage Forward Transconductance IDSS Zero Gate Voltage Drain Current
Units
0.45 0.50 -100 V/°C
Test Conditions
1.0mA Reference 25°C, 1.0mA 12V, 7.0A 12V, VGS, 1.0mA 15V, 7.0A VDS= 400V,VGS=0V 400V 125°C -20V 12V, 250V 250V, 11A, 12V, 2.35
IGSS IGSS td(on) td(off)
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
Measured from center drain center source 1.0MHz
Ciss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
4000
Source-Drain Diode Ratings Characteristics
Parameter
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Units
1100
Test Conditions
25°C, 11A, 25°C, 11A, di/dt 100A/µs
Intrinsic turn-on time negligible. Turn-on speed substantially controlled
Thermal Resistance
Parameter
RthJC RthJ-PCB Junction-to-Case Junction-to-PC board
Units
0.83
°C/W
Test Conditions
soldered 1"sq. copper-clad board
Note: Corresponding Spice Saber models available International Rectifier Website. footnotes refer last page
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Radiation Characteristics Pre-Irradiation
IRHN7450, JANSR2N7270U
International Rectifier Radiation Hardened MOSFETs tested verify their radiation hardness capability. hardness assurance program International Rectifier comprised radiation environments. Every manufacturing tested total ionizing dose (per notes using TO-3 package. Both pre- post-irradiation performance tested specified using same drive circuitry test conditions order provide direct comparison.
Table Electrical Characteristics 25°C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (SMD-1) Diode Forward Voltage
100K Rads(Si)1
300K- 1000K Rads (Si)2
Units
Test Conditions
1.0mA VDS, 1.0mA =400V, 12V, 7.0A 12V, =7.0A
-100 0.45 0.45
1.25
-100
Part number IRHN7450 (JANSR2N7270U) Part numbers IRHN3450 (JANSF2N7270U), IRHN4450 (JANSG2N7270U) IRHN8450 (JANSH2N7270U)
International Rectifier radiation hardened MOSFETs have been characterized heavy environment Single Event Effects (SEE). Single Event Effects characterization illustrated Fig. Table
Table Single Event Effect Safe Operating Area
(MeV/(mg/cm
Energy
(MeV)
Range
(µm)
VGS=0V @VGS=-5V
@VGS=-10V @VGS=-15V @VGS=-20V
Single Event Effect, Safe Operating Area
footnotes refer last page
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IRHN7450, JANSR2N7270U
Post-Irradiation Pre-Irradiation
Typical Response Gate Threshhold Typical Response On-State Resistance Voltage Total Dose Exposure Total Dose Exposure
Typical Response Transconductance Total Dose Exposure
Typical Response Drain Source Breakdown Total Dose Exposure
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Post-Irradiation Pre-Irradiation
IRHN7450, JANSR2N7270U
Typical Zero Gate Voltage Drain Current Total Dose Exposure
Typical On-State Resistance Neutron Fluence Level
Gate Stress VGSS Equals Volts During Radiation
Typical Transient Response Hard HEXFET During 1x1012 (Si)/Sec Exposure
VDSS Stress Equals BVDSS During Radiation
High Dose Rate (Gamma Dot) Test Circuit
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IRHN7450, JANSR2N7270U
Note: Bias Conditions during radiation: Vdc,
RadiationPost-Irradiation Characteristics Pre-Irradiation
Typical Output Characteristics Pre-Irradiation
Typical Output Characteristics Post-Irradiation 100K Rads (Si)
Typical Output Characteristics Post-Irradiation 300K Rads (Si)
Typical Output Characteristics Post-Irradiation Mega Rads (Si)
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Radiation Characteristics Pre-Irradiation
IRHN7450, JANSR2N7270U
Note: Bias Conditions during radiation: Vdc,
Typical Output Characteristics Pre-Irradiation
Typical Output Characteristics Post-Irradiation 100K Rads (Si)
Typical Output Characteristics Post-Irradiation 300K Rads (Si)
Typical Output Characteristics Post-Irradiation Mega Rads (Si)
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IRHN7450, JANSR2N7270U
Pre-Irradiation
Typical Output Characteristics
Typical Output Characteristics
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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Pre-Irradiation
IRHN7450, JANSR2N7270U
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRHN7450, JANSR2N7270U
Pre-Irradiation
D.U.T.
Pulse Width Duty Factor
27a. Switching Time Test Circuit
Maximum Drain Current Case Temperature
td(on) d(off)
27b. Switching Time Waveforms
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHN7450, JANSR2N7270U
DRIVER
D.U.T
0.01
29a. Unclamped Inductive Test Circuit
V(BR)DSS
29c. Maximum Avalanche Energy Drain Current
29b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
30a. Basic Gate Charge Waveform
30b. Gate Charge Test Circuit
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IRHN7450, JANSR2N7270U
Pre-Irradiation
Foot Notes:
Repetitive Rating; Pulse width limited
maximum junction temperature. 25V, starting 25°C, 7.4mH Peak 11A, =12V 11A, di/dt 140A/µs, 500V, 150°C
Pulse width Duty Cycle Total Dose Irradiation with Bias.
volt applied during irradiation MIL-STD-750, method 1019, condition Total Dose Irradiation with Bias. volt applied during irradiation MlL-STD-750, method 1019, condition
Case Outline Dimensions SMD-1
ASSIGNMENTS
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 LEOMINSTER Crawford St., Leominster, Massachusetts 01453, Tel: (978) 534-5776 Fax: (310) 252-7903 Visit www.irf.com sales contact information. Data specifications subject change without notice. 05/2006
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) Part Number

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