RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) Part Number

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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) Part Number

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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
Part Number IRHM7450 IRHM3450 IRHM4450 IRHM8450 Radiation Level 100K Rads (Si) 300K Rads (Si) 500K Rads (Si) 1000K Rads (Si) RDS(on) 0.45 0.45 0.45 0.45
IRHM7450 JANSR2N7270 500V, N-CHANNEL
REF: MIL-PRF-19500/603 RAD-Hard HEXFET TECHNOLOGY
Part Number JANSR2N7270 JANSF2N7270 JANSG2N7270 JANSH2N7270
TO-254AA
International Rectifier's RAD-Hard HEXFET technology provides high performance power MOSFETs space applications. This technology over decade proven performance reliability satellite applications. These devices have been characterized both Total Dose Single Event Effects (SEE). combination Rdson gate charge reduces power losses switching applications such converters motor control. These devices retain well established advantages MOSFETs such voltage control, fast switching, ease paralleling temperature stability electrical parameters.
Features:
Single Event Effect (SEE) Hardened RDS(on) Total Gate Charge Simple Drive Requirements Ease Paralleling Hermetically Sealed Ceramic Eyelets Light Weight
Absolute Maximum Ratings
Parameter
12V, 25°C 12V, 100°C 25°C dv/dt Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight footnotes refer last page
Pre-Irradiation
Units
W/°C
V/ns
(0.063 (1.6mm) from case 10s) (Typical)
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05/18/06
IRHM7450, JANSR2N7270
Pre-Irradiation
Electrical Characteristics 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage DSS/T Temperature Coefficient Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage Forward Transconductance IDSS Zero Gate Voltage Drain Current
Units
0.45 0.50 -100 V/°C
Test Conditions
1.0mA Reference 25°C, 1.0mA 12V, 7.0A 12V, VGS, 1.0mA 15V, 7.0A VDS= 400V,VGS=0V 400V 125°C -20V 12V, 250V 250V, 11A, 12V, 2.35
IGSS IGSS td(on) td(off)
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
Measured from drain lead (6mm/0.25in. from package) source lead (6mm/0.25in. from package)
Ciss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
4000
1.0MHz
Source-Drain Diode Ratings Characteristics
Parameter
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Units
1100
Test Conditions
25°C, 11A, 25°C, 11A, di/dt 100A/µs
Intrinsic turn-on time negligible. Turn-on speed substantially controlled
Thermal Resistance
Parameter
RthJC RthCS RthJA Junction-to-Case Case-to-sink Junction-to-Ambient
0.83 0.21
Units
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice Saber models available International Rectifier Website. footnotes refer last page
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Radiation Characteristics Pre-Irradiation
IRHM7450, JANSR2N7270
International Rectifier Radiation Hardened MOSFETs tested verify their radiation hardness capability. hardness assurance program International Rectifier comprised radiation environments. Every manufacturing tested total ionizing dose (per notes using TO-3 package. Both pre- post-irradiation performance tested specified using same drive circuitry test conditions order provide direct comparison.
Table Electrical Characteristics 25°C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (TO-254AA) Diode Forward Voltage
100K Rads(Si)1
1000K Rads (Si)2
Units
Test Conditions
1.0mA VDS, 1.0mA VDS=80V, 12V, 7.0A 12V, 7.0A
-100 0.45 0.45
1.25
-100
Part number IRHM7450 (JANSR2N7270) Part numbers IRHM3450 (JANSF2N7270), IRHM4450 (JANSG2N7270) IRHM8450 (JANSH2N7270)
International Rectifier radiation hardened MOSFETs have been characterized heavy environment Single Event Effects (SEE). Single Event Effects characterization illustrated Fig. Table
Table Single Event Effect Safe Operating Area
(MeV/(mg/cm
Energy
(MeV)
Range
(µm)
VGS=0V @VGS=-5V
@VGS=-10V @VGS=-15V @VGS=-20V
Single Event Effect, Safe Operating Area
footnotes refer last page
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IRHM7450, JANSR2N7270
Post-Irradiation Pre-Irradiation
Typical Response Gate Threshhold Voltage Total Dose Exposure
Typical Response On-State Resistance Total Dose Exposure
Typical Response Transconductance Total Dose Exposure
Typical Response Drain Source Breakdown Total Dose Exposure
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Post-Irradiation Pre-Irradiation
IRHM7450, JANSR2N7270
Typical Zero Gate Voltage Drain Current Total Dose Exposure
Typical On-State Resistance Neutron Fluence Level
Gate Stress VGSS Equals Volts During Radiation
Typical Transient Response Hard HEXFET During 1x1012 (Si)/Sec Exposure
VDSS Stress Equals BVDSS During Radiation
High Dose Rate (Gamma Dot) Test Circuit
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IRHM7450, JANSR2N7270
RadiationPost-Irradiation Characteristics Pre-Irradiation
Note: Bias Conditions during radiation: Vdc,
Typical Output Characteristics Pre-Irradiation
Typical Output Characteristics Post-Irradiation 100K Rads (Si)
Typical Output Characteristics Post-Irradiation 300K Rads (Si)
Typical Output Characteristics Post-Irradiation Mega Rads(Si)
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Radiation Characteristics Pre-Irradiation
IRHM7450, JANSR2N7270
Note: Bias Conditions during radiation: Vdc,
Typical Output Characteristics Pre-Irradiation
Typical Output Characteristics Post-Irradiation 100K Rads (Si)
Typical Output Characteristics Post-Irradiation 300K Rads (Si)
Typical Output Characteristics Post-Irradiation Mega Rads(Si)
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IRHM7450, JANSR2N7270
Pre-Irradiation
Typical Output Characteristics
Typical Output Characteristics
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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Pre-Irradiation
IRHM7450, JANSR2N7270
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRHM7450, JANSR2N7270
Pre-Irradiation
D.U.T.
Pulse Width Duty Factor
27a. Switching Time Test Circuit
Maximum Drain Current Case Temperature
td(on)
d(off)
27b. Switching Time Waveforms
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHM7450, JANSR2N7270
DRIVER
D.U.T
0.01
29a. Unclamped Inductive Test Circuit
V(BR)DSS
29c. Maximum Avalanche Energy Drain Current
29b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
30a. Basic Gate Charge Waveform
30b. Gate Charge Test Circuit
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IRHM7450, JANSR2N7270
Pre-Irradiation
Pulse width Duty Cycle Total Dose Irradiation with Bias.
volt applied during irradiation MIL-STD-750, method 1019, condition Total Dose Irradiation with Bias. volt applied during irradiation MlL-STD-750, method 1019, condition
Foot Notes:
Repetitive Rating; Pulse width limited
maximum junction temperature.
25V, starting 25°C, 7.4mH
Peak 11A,
11A, di/dt 140A/µs,
500V, 150°C
Case Outline Dimensions Low-Ohmic TO-254AA
0.12 [.005] 3.78 [.149] 3.53 [.139] 13.84 [.545] 13.59 [.535] 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040]
17.40 [.685] 16.89 [.665]
20.32 [.800] 20.07 [.790]
13.84 [.545] 13.59 [.535]
3.81 [.150]
1.14 [.045] 0.89 [.035] 0.36 [.014]
3.81 [.150]
127(6
DIMENSIONING TOLERANCING ASME Y14.5M-1994. DIMENSIONS SHOWN MILLIMETERS [INCHES]. CONTROLLING DIMENSION: INCH. CONFORMS JEDEC OUTLINE TO-254AA. ASSIGNMENTS DRAIN SOURCE GATE
CAUTION BERYLLIA WARNING MIL-PRF-19500 Packages containing beryllia shall ground, sandblasted, machined have other operations performed them which will produce beryllia beryllium dust. Furthermore, beryllium oxide packages shall placed acids that will produce fumes containing beryllium.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 LEOMINSTER Crawford St., Leominster, Massachusetts 01453, Tel: (978) 534-5776 Fax: (310) 252-7903 Visit www.irf.com sales contact information. Data specifications subject change without notice. 05/2006
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) Part Number

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