IRGPH40M INSULATED GATE BIPOLAR TRANSISTOR Short circuit rat

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IRGPH40M INSULATED GATE BIPOLAR TRANSISTOR Short circuit rat

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Preliminary Data Sheet 9.1029A
IRGPH40M
INSULATED GATE BIPOLAR TRANSISTOR
Short circuit rated 10µs 125°C, Switching-loss rating includes "tail" losses Optimized medium operating frequency 10kHz)
Short Circuit Rated Fast IGBT
VCES 1200V VCE(sat) 3.4V
@VGE 15V,
n-chan
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while same time having simpler gate-drive requirements familiar power MOSFET. They provide substantial benefits host high-voltage, highcurrent applications. These short circuit rated devices especially suited motor control other applications requiring short circuit withstand capability.
Absolute Maximum Ratings
Parameter
VCES 25°C 100°C EARV 25°C 100°C TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction Storage Temperature Range Soldering Temperature, sec. Mounting torque, 6-32 screw.
Max.
1200 +150 (0.063 (1.6mm) from case)
Units
Thermal Resistance
Parameter
Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
Typ.
-0.24 (0.21)
Max.
0.77
Units
°C/W (oz)
8/4/97
IRGPH40M
Electrical Characteristics 25°C (unless otherwise specified)
Parameter Min. Collector-to-Emitter Breakdown Voltage 1200 Emitter-to-Collector Breakdown Voltage V(BR)CES/TJ Temperature Coeff. Breakdown Voltage -Collector-to-Emitter Saturation Voltage -VCE(on) -VGE(th) Gate Threshold Voltage VGE(th)/TJ Temperature Coeff. Threshold Voltage -Forward Transconductance Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current -V(BR)CES V(BR)ECS Typ. -1.1 -Max. Units Conditions 250µA 1.0A V/°C 1.0mA 18A, 150°C VGE, 250µA mV/°C VGE, 250µA 100V, 1200V 3500 1200V, 150°C ±100 ±20V
Switching Characteristics 25°C (unless otherwise specified)
td(on) td(off) Eoff td(on) td(off) Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate Emitter Charge (turn-on) Gate Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions 400V 25°C 18A, 960V 15V, Energy losses include "tail" 720V, 125°C 15V, VCPK 1000V 150°C, 18A, 960V -VGE 15V, -Energy losses include "tail" Measured from package 1360 -VGE 1.0MHz
Repetitive rating; GE=20V, pulse width
limited max. junction temperature.
Repetitive rating; pulse width limited
maximum junction temperature.
Pulse width 5.0µs,
single shot.
=80%(VCES), VGE=20V, L=10µH,
Pulse width 80µs; duty factor 0.1%.
Note: most current drawings please refer website http://www.irf.com/package/

IRGPH40M INSULATED GATE BIPOLAR TRANSISTOR Short circuit rat

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