30A, 60V, Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs T
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RFP30N06LE, RF1S30N06LESM
30A, 60V, Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs
These N-Channel power MOSFETs manufactured using MegaFET process. This process, which uses feature sizes approaching those integrated circuits gives optimum utilization silicon, resulting outstanding performance. They were designed applications such switching regulators, switching converters, motor drivers relay drivers. These transistors operated directly from integrated circuits. These transistors incorporate protection designed withstand (Human Body Model) ESD. Formerly developmental type TA49027.
Features
30A, rDS(ON) 0.047 Protected Temperature Compensating PSPICE® Model Peak Current Pulse Width Curve Rating Curve Related Literature TB334 "Guidelines Soldering Surface Mount Components Boards"
Symbol
Ordering Information
PART NUMBER RFP30N06LE RF1S30N06LESM PACKAGE TO-220AB TO-263AB BRAND P30N06LE 1S30N06L
NOTE: When ordering entire part number. suffix, obtain TO-263 variant tape reel i.e. RF1S30N06LESM9A.
Packaging
JEDEC TO-220AB JEDEC TO-263AB
SOURCE DRAIN GATE DRAIN (FLANGE)
GATE SOURCE
DRAIN (FLANGE)
©2004 Fairchild Semiconductor Corporation
RFP30N06LE, RF1S30N06LESM Rev.
RFP30N06LE, RF1S30N06LESM
Absolute Maximum Ratings
25oC, Unless Otherwise Specified RFP30N06LE, RF1S30N06LESM +10, Refer Peak Current Curve Refer Curve 0.645 UNITS
Drain Source Voltage (Note VDSS Drain Gate Voltage 20k) (Note VDGR Gate Source Voltage Continuous Drain Current Pulsed Drain Current (Note Pulsed Avalanche Rating Power Dissipation Derate Above 25oC Electrostatic Discharge Rating, MIL-STD-883, Category B(2). .ESD Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief 334. Tpkg
W/oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 150oC.
Electrical Specifications
PARAMETER
25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS 250µA, Figure VDS, 250µA, Figure Rated BVDSS Rated VDSS, 150oC 25V, 1MHz Figure 48V, 30A, Figures 1350 0.047 1.55 UNITS
oC/W oC/W
Drain Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
Gate Source Leakage Current Drain Source Resistance (Note Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction Case Thermal Resistance Junction Ambient
IGSS rDS(ON) td(ON) td(OFF) tOFF Qg(TOT) Qg(5) Qg(TH) CISS COSS CRSS
+10, 30A, Figure 30V, 30A, 2.5, Figures
Source Drain Diode Specifications
PARAMETER Source Drain Diode Voltage (Note Diode Reverse Recovery Time NOTES: Pulse Test: Pulse Width 300ms, Duty Cycle Repetitive Rating: Pulse Width limited junction temperature. Transient Thermal Impedance Curve (Figure Peak Current Capability Curve (Figure SYMBOL 30A, dISD/dt 100A/µs TEST CONDITIONS UNITS
©2004 Fairchild Semiconductor Corporation
RFP30N06LE, RF1S30N06LESM Rev.
RFP30N06LE, RF1S30N06LESM Typical Performance Curves
POWER DISSIPATION MULTIPLIER
Unless Otherwise Specified
DRAIN CURRENT
CASE TEMPERATURE (oC)
CASE TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT CASE TEMPERATURE
NORMALIZED THERMAL IMPEDANCE 0.05 0.02 0.01 SINGLE PULSE 0.01 10-5 10-3 RECTANGULAR PULSE DURATION 10-1 NOTES: DUTY FACTOR: t1/t2 PEAK
FIGURE NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
DRAIN CURRENT
RATED
PEAK CURRENT CAPABILITY
TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT FOLLOWS:
100ms
OPERATION THIS AREA LIMITED rDS(ON)
10ms 100ms
TRANSCONDUCTANCE LIMIT CURRENT THIS REGION 10-6 10-5 10-4 10-3 10-2 PULSE WIDTH
25oC
DRAIN SOURCE VOLTAGE
FIGURE FORWARD BIAS SAFE OPERATING AREA
FIGURE PEAK CURRENT CAPABILITY
©2004 Fairchild Semiconductor Corporation
RFP30N06LE, RF1S30N06LESM Rev.
RFP30N06LE, RF1S30N06LESM Typical Performance Curves
AVALANCHE CURRENT STARTING 25oC STARTING 150oC DRAIN CURRENT 25oC 4.5V PULSE DURATION 80µs DUTY CYCLE 0.5% MAX. DRAIN SOURCE VOLTAGE
Unless Otherwise Specified (Continued)
(L)(IAS)/(1.3*RATED BVDSS VDD) (L/R)ln[(IAS*R)/(1.3*RATED BVDSS VDD) 0.01 tAV, TIME AVALANCHE (ms)
NOTE: Refer Fairchild Application Notes AN9321 AN9322. FIGURE UNCLAMPED INDUCTIVE SWITCHING
FIGURE SATURATION CHARACTERISTICS
IDS(ON) DRAIN SOURCE CURRENT
NORMALIZED DRAIN SOURCE RESISTANCE PULSE DURATION 80µs DUTY CYCLE 0.5% MAX. -55oC 175oC
PULSE DURATION 80µs DUTY CYCLE 0.5% MAX.
GATE SOURCE VOLTAGE
JUNCTION TEMPERATURE (oC)
FIGURE TRANSFER CHARACTERISTICS
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE VDS, 250µA
250µA
NORMALIZED GATE THRESHOLD VOLTAGE
JUNCTION TEMPERATURE (oC)
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE
FIGURE NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE JUNCTION TEMPERATURE
©2004 Fairchild Semiconductor Corporation
RFP30N06LE, RF1S30N06LESM Rev.
RFP30N06LE, RF1S30N06LESM Typical Performance Curves
2000
Unless Otherwise Specified (Continued)
DRAIN SOURCE VOLTAGE BVDSS BVDSS 3.75
CAPACITANCE (pF)
1500
CISS
1000
1MHz CISS CRSS COSS COSS CRSS
0.75 BVDSS 0.75 BVDSS 0.50 BVDSS 0.50 BVDSS 0.25 BVDSS 0.25 BVDSS IG(REF) 0.62mA
1.25
IG(REF) IG(ACT) TIME IG(REF) IG(ACT)
DRAIN SOURCE VOLTAGE
NOTE: Refer Fairchild Application Notes AN7254 AN7260. FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE FIGURE NORMALIZED SWITCHING WAVEFORMS CONSTANT GATE CURRENT
Test Circuits Waveforms
BVDSS VARY OBTAIN REQUIRED PEAK
0.01
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORMS
td(ON)
tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
©2004 Fairchild Semiconductor Corporation
RFP30N06LE, RF1S30N06LESM Rev.
GATE SOURCE VOLTAGE
RFP30N06LE, RF1S30N06LESM Test Circuits Waveforms
(Continued)
Qg(TOT)
Qg(5) Qg(TH) IG(REF)
IG(REF)
FIGURE GATE CHARGE TEST CIRCUIT
FIGURE GATE CHARGE WAVEFORMS
©2004 Fairchild Semiconductor Corporation
RFP30N06LE, RF1S30N06LESM Rev.
RFP30N06LE, RF1S30N06LESM PSPICE Electrical Model
SUBCKT RFP30N06LE 3.34e-9 3.44e-9 1.343e-9 DBODY DBDMOD DBREAK DBKMOD DESD1 DESD1MOD DESD2 DESD2MOD DPLCAP DPLCAPMOD EBREAK 75.39 EVTO LDRAIN 1e-9 LGATE 7.22e-9 LSOURCE 6.31e-9 MOS1 MOSMOD 0.99 MOS2 MOSMOD 0.01 RBREAK RBKMOD RDRAIN RDSMOD 11.86e-3 RGATE 2.52 RSCL1 RSLVCMOD 1e-6 RSCL2 RSOURCE RDSMOD 26.6e-3 RVTO RVTOMOD S1AMOD S1BMOD S2AMOD S2BMOD VBAT ESCL VALUE .MODEL DBDMOD 3.80e-13 1.12e-2 TRS1 1.61e-3 TRS2 6.08e-6 1.05e-9 3.84e-8) .MODEL DBKMOD 1.82e-1 TRS1 7.50e-3 TRS2 -4.0e-5) .MODEL DESD1MOD 13.54 TBV1 TBV2 45.5 TRS1 TRS2 .MODEL DESD2MOD 11.46 TBV1 -7.576e-4 TBV2 -3.0e-6 TRS1 TRS2 .MODEL DPLCAPMOD (CJO 0.591e-9 1e-30 .MODEL MOSMOD NMOS (VTO 1.94 139.2 1e-30 .MODEL RBKMOD (TC1 1.07e-3 -3.03e-7) .MODEL RDSMOD (TC1 5.38e-3 1.64e-5) .MODEL RSLVCMOD (TC1 1.75e-3 3.90e-6) .MODEL RVTOMOD (TC1 -2.15e-3 -5.43e-6) .MODEL S1AMOD VSWITCH (RON 1e-5 ROFF -4.05 VOFF -1.5) .MODEL S1BMOD VSWITCH (RON 1e-5 ROFF -1.5 VOFF -4.05) .MODEL S2AMOD VSWITCH (RON 1e-5 ROFF -2.2 VOFF 2.8) .MODEL S2BMOD VSWITCH (RON 1e-5 ROFF VOFF -2.2) .ENDS NOTE: further discussion PSPICE model, consult PSPICE Sub-Circuit Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records 1991.
6/2/93
DPLCAP RSCL2
DRAIN LDRAIN RSCL1 DBREAK EBREAK RDRAIN DBODY
ESCL
MOS1 MOS2
GATE EVTO LGATE RGATE DESD1 DESD2
RSOURCE LSOURCE SOURCE
RBREAK RVTO VBAT
©2004 Fairchild Semiconductor Corporation
RFP30N06LE, RF1S30N06LESM Rev.
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First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.
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