70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs These N-Channel powe

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70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs These N-Channel powe

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RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM
70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs
These N-Channel power MOSFETs manufactured using MegaFET process. This process, which uses feature sizes approaching those circuits, gives optimum utilization silicon, resulting outstanding performance. They were designed applications such switching regulators, switching converters, motor drivers relay drivers. These transistors operated directly from integrated circuits. Formerly developmental type TA78440.
Features
70A, rDS(on) 0.014 Temperature Compensated PSPICE® Model Peak Current Pulse Width Curve Rating Curve (Single Pulse) 175oC Operating Temperature Related Literature TB334 "Guidelines Soldering Surface Mount Components Boards"
Ordering Information
PART NUMBER RFG70N06 RFP70N06 RF1S70N06 RF1S70N06SM PACKAGE TO-247 TO-220AB TO-262AA TO-263AB BRAND RFG70N06 RFP70N06 F1S70N06 F1S70N06
Symbol
NOTE: When ordering entire part number. suffix obtain TO-263AB variant tape reel, e.g. RF1S70N06SM9A.
Packaging
JEDEC STYLE TO-247
SOURCE DRAIN GATE DRAIN (BOTTOM SIDE METAL) GATE SOURCE DRAIN (FLANGE)
JEDEC TO-263AB
JEDEC TO-220AB
SOURCE DRAIN GATE
JEDEC TO-262AA
SOURCE DRAIN GATE
DRAIN (FLANGE)
DRAIN (FLANGE)
©2005 Fairchild Semiconductor Corporation
RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Rev.
RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM
Absolute Maximum Ratings
25oC, Unless Otherwise Specified RFG70N06, RFP70N06 RF1S70N06, RF1S70N06SM Refer Peak Current Curve Refer Curve UNITS W/oC
Drain Source Voltage (Note VDSS Drain Gate Voltage (RGS 20k) (Note VDGR Continuous Drain Current Pulsed Drain Current (Note .IDM Gate Source Voltage Single Pulse Avalanche Rating Power Dissipation Linear Derating Factor Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief Tpkg
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 150oC.
Electrical Specifications
PARAMETER
25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS 250µA, (Figure VDS, 250µA (Figure 60V, Rated BVDSS, 150oC ±20V 70A, (Figure 30V, 70A, 0.43, 10V, (Figure 48V, 70A, 0.68 Ig(REF) 2.2mA (Figure TO-220 TO-263 TO-247 2250 ±100 0.014 UNITS
oC/W oC/W oC/W
Drain Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
Gate Source Leakage Current Drain Source Resistance (Note Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance, Junction Case Thermal Resistance, Junction Ambient
IGSS rDS(ON) t(ON) td(ON) td(OFF) t(OFF) Qg(TOT) Qg(10) Qg(TH) CISS COSS CRSS
25V, 1MHz (Figure
Source Drain Diode Specifications
PARAMETER Source Drain Diode Voltage Reverse Recovery Time NOTES: Pulse test: pulse width 300ms, duty cycle Repetitive rating: pulse width limited maximum junction temperature. Transient Thermal Impedance curve (Figure Peak Current Capability Curve (Figure SYMBOL 70A, dISD/dt 100A/µs TEST CONDITIONS UNITS
©2005 Fairchild Semiconductor Corporation
RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Rev.
RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Typical Performance Curves
POWER DISSIPATION MULTIPLIER
25oC, Unless Otherwise Specified
DRAIN CURRENT
CASE TEMPERATURE (oC)
CASE TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT CASE TEMPERATURE
THERMAL IMPEDANCE NORMALIZED
0.05 0.02 0.01 SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10-1
NOTES: DUTY FACTOR: t1/t2 PEAK
RECTANGULAR PULSE DURATION
FIGURE NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
1000
IDM, PEAK CURRENT
DRAIN CURRENT
100µs
25oC TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT FOLLOWS:
OPERATION THIS AREA LIMITED rDS(ON) 25oC RATED SINGLE PULSE VDS, DRAIN SOURCE VOLTAGE
10ms
TRANSCONDUCTANCE LIMIT CURRENT THIS REGION 10-4 10-3 10-2 10-1 PULSE WIDTH
10-5
FIGURE FORWARD BIAS SAFE OPERATING AREA
FIGURE PEAK CURRENT CAPABILITY
©2005 Fairchild Semiconductor Corporation
RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Rev.
RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Typical Performance Curves
IAS, AVALANCHE CURRENT
25oC, Unless Otherwise Specified (Continued)
DRAIN CURRENT PULSE DURATION 80µs DUTY CYCLE 0.5% 25oC
(L)(IAS)/(1.3*RATED BVDSS VDD) (L/R) [(IAS*R)/(1.3*RATED BVDSS-VDD) STARTING 25oC
STARTING 150oC 0.01
4.5V
tAV, TIME AVALANCHE (ms)
VDS, DRAIN SOURCE VOLTAGE
NOTE: Refer Fairchild Application Notes AN9321 AN9322. FIGURE UNCLAMPED INDUCTIVE SWITCHING CAPABILITY FIGURE SATURATION CHARACTERISTICS
IDS(ON), DRAIN SOURCE CURRENT
-55oC
25oC 175oC
NORMALIZED DRAIN SOURCE RESISTANCE
PULSE DURATION 80µs DUTY CYCLE 0.5%
PULSE DURATION 250µs DUTY CYCLE 0.5% 10V,
VGS, GATE SOURCE VOLTAGE
JUNCTION TEMPERATURE (oC)
FIGURE TRANSFER CHARACTERISTICS
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
VDS, 250µA NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE
250µA
NORMALIZED GATE THRESHOLD VOLTAGE
JUNCTION TEMPERATURE (oC)
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE
FIGURE NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE JUNCTION TEMPERATURE
©2005 Fairchild Semiconductor Corporation
RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Rev.
RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Typical Performance Curves
5000 VDS, DRAIN SOURCE VOLTAGE 1MHz CISS CRSS COSS
25oC, Unless Otherwise Specified (Continued)
VGS, GATE SOURCE VOLTAGE
4000 CAPACITANCE (pF) CISS 3000
BVDSS 0.86 IG(REF) 2.2mA 0.75 BVDSS 0.50 BVDSS 0.25 BVDSS
BVDSS
2000 COSS 1000 CRSS VDS, DRAIN SOURCE VOLTAGE
G(REF) IG(ACT) TIME (µs) G(REF) IG(ACT)
NOTE: Refer Fairchild Application Notes AN7254 AN7260. FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE FIGURE NORMALIZED SWITCHING WAVEFORMS CONSTANT GATE CURRENT
Test Circuits Waveforms
BVDSS VARY OBTAIN REQUIRED PEAK
0.01
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORMS
tOFF td(OFF)
td(ON)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE SWITCHING WAVEFORMS
©2005 Fairchild Semiconductor Corporation
RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Rev.
RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Test Circuits Waveforms
Qg(TOT)
(Continued)
Qg(10) Qg(TH) Ig(REF)
Ig(REF)
FIGURE GATE CHARGE TEST CIRCUIT
FIGURE GATE CHARGE WAVEFORM
©2005 Fairchild Semiconductor Corporation
RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Rev.
RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM PSPICE Electrical Model
.SUBCKT RFG70N06
5.56e-9 5.30e-9 2.63e-9 DBODY DBDMOD DBREAK DBKMOD DPLCAP DPLCAPMOD EBREAK 65.18 EVTO LDRAIN 1e-9 LGATE 3.10e-9 LSOURCE 1.82e-9 MOS1 MOSMOD 0.99 MOS2 MOSMOD 0.01 RBREAK RBKMOD RDRAIN RDSMOD 4.66e-3 RLDRAIN RGATE 1.21 RLGATE RSOURCE RDSMOD 3.92e-3 RLSOURCE 18.2 RVTO RVTOMOD S1AMOD S1BMOD S2AMOD S2BMOD
GATE LGATE
3/20/92
RLDRAIN DPLCAP LDRAIN RSCL2 RSCL1 ESCL RLGATE EVTO RDRAIN EBREAK MOS2 DBODY DBREAK DRAIN
MOS1
RGATE
RSOURCE
RLSOURCE SOURCE LSOURCE
RBREAK RVTO VBAT
VBAT 0.605
.MODEL DBDMOD 7.91e-12 3.87e-3 TRS1 2.71e-3 TRS2 2.50e-7 4.84e-9 4.51e-8) .MODEL DBKMOD 3.9e-2 TRS1 =1.05e-4 TRS2 3.11e-5) .MODEL DPLCAPMOD (CJO 4.8e-9 1e-30 .MODEL MOSMOD NMOS (VTO 3.46 1e-30 .MODEL RBKMOD (TC1 8.46e-4 -8.48e-7) .MODEL RDSMOD (TC1 2.23e-3 6.56e-6) .MODEL RVTOMOD (TC1 -3.29e-3 3.49e-7) .MODEL S1AMOD VSWITCH (RON 1e-5 ROFF -8.35 VOFF= -6.35) .MODEL S1BMOD VSWITCH (RON 1e-5 ROFF -6.35 VOFF= -8.35) .MODEL S2AMOD VSWITCH (RON 1e-5 ROFF -2.0 VOFF= 3.0) .MODEL S2BMOD VSWITCH (RON 1e-5 ROFF VOFF= -2.0) .ENDS NOTE: further discussion PSPICE model, consult PSPICE Sub-circuit Power MOSFET Featuring Global Temperature Options; written William Hepp Frank Wheatley.
©2005 Fairchild Semiconductor Corporation
RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Rev.
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
ACExFAST Quiet Series
Across board. Around world.OPTOLOGIC OPTOPLANARThe Power Franchise PACMANProgrammable Active Droop
QFET QSQT OptoelectronicsQuiet SWITCHER SMART START
SPMStealthSuperFETSuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTinyLogic UniFETVCX
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: critical component component life Life support devices systems devices support device system whose failure perform systems which, intended surgical implant into reasonably expected cause failure life body, support sustain life, whose support device system, affect safety failure perform when properly used accordance with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.

70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs These N-Channel powe

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