REJ03G0446-0500 Rev.5.00 Oct.19.2004 on-resistance RDS(on) typ. -

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REJ03G0446-0500 Rev.5.00 Oct.19.2004 on-resistance RDS(on) typ. -

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HAT1111C
REJ03G0446-0500 Rev.5.00 Oct.19.2004
on-resistance RDS(on) typ. -10V) drive current. gate drive devices. High density mounting
Outline
CMFPAK Index band Source Drain Drain Drain Drain Gate
Absolute Maximum Ratings
25°C)
Item Symbol Ratings Drain Source voltage VDSS Gate Source voltage VGSS Drain current Drain peak current (pulse)Note1 Body Drain diode reverse drain current Note Channel dissipation 1.25 Channel temperature Storage temperature Tstg +150 Notes: duty cycle When using glass epoxy board. (FR4 1.6mm), 25°C Unit
Rev.5.00 2004 page
HAT1111C
Electrical Characteristics
25°C)
Item Drain Source breakdown voltage Gate Source breakdown voltage Gate Source leakage current Drain Source leakage current Gate Source cutoff voltage Drain Source state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate Source charge Gate Drain charge Turn delay time Rise time Turn delay time Fall time Body Drain diode forward voltage Notes: Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(th) RDS(on) Ciss Coss Crss td(on) td(off) Min. 0.65 Typ. -0.85 Max. -1.2 Unit Test Conditions ±100 Note3 Note3 -4.5 Note3 Note3
Rev.5.00 2004 page
HAT1111C
Main Characteristics
Power Temperature Derating -100 Maximum Safe Operation Area
25°C,1shot pulse When using board.
-0.3 -0.1
Operation this
Power Dissipation
Drain Current
-0.03 (°C)
area limited RDS(on)
-0.01 -0.03 -0.1 -0.3
-100
Ambient Temperature
Drain Source Voltage
Typical Output Characteristics
-4.5
Typical Transfer Characteristics Pulse Test 25°C 75°C -25°C
Pulse Test
Drain Current
-3.5
Drain Current
-2.5
Drain Source Voltage
Gate Source Voltage
Drain Source Saturation Voltage Gate Source Voltage -800
Static Drain Source State Resistance Drain Current 1000 -4.5V
Drain Source Saturation Voltage VDS(on) (mV)
Pulse Test
-600 -400 -200 -0.5 -0.01 -0.1 Drain Current Pulse Test
Gate Source Voltage
Rev.5.00 2004 page
HAT1111C
Static Drain Source State Resistance Temperature 1000 Forward Transfer Admittance Drain Current
Forward Transfer Admittance |yfs|
-0.1
-0.5,-1 -4.5V -0.5,-1
-25°C 25°C 75°C
-10V
Pulse Test (°C) Case Temperature
Pulse Test
-0.3
-100
Drain Current
Dynamic Input Characteristics
Typical Capacitance Drain Source Voltage
10000 3000
Gate Charge (nC)
Ciss
Drain Source Voltage
Gate Source Voltage
Capacitance (pF)
1000
Coss Crss
Drain Source Voltage
Reverse Drain Current Source Drain Voltage
Switching Characteristics 1000
Switching Time (ns)
Reverse Drain Current
td(off) td(on) -0.01 -0.03
Pulse Test -0.4 -0.8 -1.2 -1.6 -2.0 Source Drain Voltage
-0.1 -0.3 Drain Current
Rev.5.00 2004 page
HAT1111C
Switching Time Test Circuit Monitor D.U.T. -4.5 Vout td(on) td(off) Vout Monitor Switching Time Waveform
Rev.5.00 2004 page
HAT1111C
Package Dimensions
January, 2003
Unit:
(0.65) (0.65)
(0.425) 1.25 (0.425)
0.15 0.05
6-0.2
0.05
(0.2)
Package Code JEDEC JEITA Mass (reference value)
CMPAK-6 Conforms 0.006
Ordering Information
Part Name HAT1111C-EL-E Quantity 3000 Shipping Container Taping
Note: some grades, production terminated. Please contact Renesas sales office check state production before ordering product.
Rev.5.00 2004 page
Sales Strategic Planning Div.
Keep safety first your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Renesas Technology Corp. puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corp. product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corp. third party. Renesas Technology Corp. assumes responsibility damage, infringement third-party's rights, originating product data, diagrams, charts, programs, algorithms, circuit application examples contained these materials. information contained these materials, including product data, diagrams, charts, programs algorithms represents information products time publication these materials, subject change Renesas Technology Corp. without notice product improvements other reasons. therefore recommended that customers contact Renesas Technology Corp. authorized Renesas Technology Corp. product distributor latest product information before purchasing product listed herein. information described here contain technical inaccuracies typographical errors. Renesas Technology Corp. assumes responsibility damage, liability, other loss rising from these inaccuracies errors. Please also attention information published Renesas Technology Corp. various means, including Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). When using information contained these materials, including product data, diagrams, charts, programs, algorithms, please sure evaluate information total system before making final decision applicability information products. Renesas Technology Corp. assumes responsibility damage, liability other loss resulting from information contained herein. Renesas Technology Corp. semiconductors designed manufactured device system that used under circumstances which human life potentially stake. Please contact Renesas Technology Corp. authorized Renesas Technology Corp. product distributor when considering product contained herein specific purposes, such apparatus systems transportation, vehicular, medical, aerospace, nuclear, undersea repeater use. prior written approval Renesas Technology Corp. necessary reprint reproduce whole part these materials. these products technologies subject Japanese export control restrictions, they must exported under license from Japanese government cannot imported into country other than approved destination. diversion reexport contrary export control laws regulations Japan and/or country destination prohibited. Please contact Renesas Technology Corp. further details these materials products contained therein.
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2004. Renesas Technology Corp., rights reserved. Printed Japan.
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REJ03G0446-0500 Rev.5.00 Oct.19.2004 on-resistance RDS(on) typ. -

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