GENERAL DESCRIPTION ALD1102 monolithic dual P-channel matched transist

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GENERAL DESCRIPTION ALD1102 monolithic dual P-channel matched transist

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ALD1102A/ALD1102B ALD1102 DUAL P-CHANNEL MATCHED MOSFET PAIR
GENERAL DESCRIPTION ALD1102 monolithic dual P-channel matched transistor pair intended broad range analog applications. These enhancementmode transistors manufactured with Advanced Linear Devices' enhanced ACMOS silicon gate CMOS process. ALD1102 offers high input impedance negative current temperature coefficient. transistor pair matched minimum offset voltage differential thermal response, designed switching amplifying applications +12V systems where input bias current, input capacitance fast switching speed desired. Since these MOSFET devices, they feature very large (almost infinite) current gain frequency, near operating environment. When used with ALD1101, dual CMOS analog switch constructed. addition, ALD1102 intended building block differential amplifier input stages, transmission gates, multiplexer applications. ALD1102 suitable precision applications which require very high current gain, beta, such current mirrors current sources. high input impedance high current gain Field Effect Transistors result extremely current loss through control gate. current gain limited gate input leakage current, which specified 50pA room temperature. example, beta device drain current 25°C 5mA/50pA 100,000,000.
APPLICATIONS Precision current mirrors Precision current sources Analog switches Choppers Differential amplifier input stage Voltage comparator Data converters Sample Hold Analog inverter
CONFIGURATION
SOURCE GATE DRAIN
VIEW PACKAGE
SUBSTRATE SOURCE GATE DRAIN
FEATURES threshold voltage 0.7V input capacitance grades 2mV, 5mV, 10mV High input impedance 1012 typical input output leakage currents Negative current (IDS) temperature coefficient Enhancement-mode (normally off) current gain
BLOCK DIAGRAM
ORDERING INFORMATION
Operating Temperature Range* -55°C +125°C +70°C +70°C 8-Pin CERDIP Package 8-Pin Plastic Package ALD1102A ALD1102B ALD1102 8-Pin SOIC Package
DRAIN
GATE
SOURCE SUBSTRATE
DRAIN
SOURCE
GATE
ALD1102
ALD1102
Contact factory industrial temperature range.
1998 Advanced Linear Devices, Inc. Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, Gate-source voltage, Power dissipation Operating temperature range Storage temperature range Lead temperature, seconds -13.2V -13.2V +70°C -55°C +125°C -65°C +150°C +260°C
package package
OPERATING ELECTRICAL CHARACTERISTICS 25°C unless otherwise specified
Parameter Gate Threshold Voltage Offset Voltage VGS1 Symbol -1.3 -0.4 1102A -0.7 -1.2 -1.3 -0.4 1102B -0.7 -1.2 -1.3 -0.4 1102 -0.7 -1.2 Unit mV/°C Test Conditions -10µA -100µA
Gate Threshold TCVT Temperature Drift Drain Current (ON)
mmho µmho
IDS= -10mA
Transconductance Mismatch Output Conductance Drain Source Resistance Drain Source Resistance Mismatch Drain Source Breakdown Voltage Drain Current RDS(ON)
-10mA -0.1V
RDS(ON)
-0.1V
BVDSS IDS(OFF)
-10µA =-12V 125°C =-12V 125°C
Gate Leakage Current Input Capacitance
IGSS
CISS
ALD1102A/ALD1102B ALD1102
Advanced Linear Devices
TYPICAL PERFORMANCE CHARACTERISITCS
OUTPUT CHARACTERISTICS
VOLTAGE OUTPUT CHARACTERISTICS
DRAIN-SOURCE CURRENT (mA)
25°C -12V
DRAIN SOURCE CURRENT (mA)
25°C
-12V -10V
DRAIN SOURCE VOLTAGE
-320
-160
DRAIN -SOURCE VOLTAGE (mV)
FORWARD TRANSCONDUCTANCE DRAIN SOURCE VOLTAGE
FORWARD TRANSCONDUCTANCE (µmho)
10000 5000 2000 1000 +25°C -1mA +125°C
TRANSFER CHARACTERISTIC WITH SUBSTRATE BIAS
DRAIN-SOURCE CURRENT (µA)
1KHz
-5mA
25°C -0.8 -1.6 -2.4 -3.2 -4.0
DRAIN SOURCE VOLTAGE
GATE SOURCE VOLTAGE
(ON) GATE SOURCE VOLTAGE
DRAIN SOURCE RESISTANCE
DRAIN CURRENT TEMPERATURE
DRAIN SOURCE CURRENT
-10X10-6 -12V
10000 0.4V 1000 +125°C
-10X10-9
+25°C
-10X10-12 +100 +125
GATE SOURCE VOLTAGE
TEMPERATURE (°C)
ALD1102A/ALD1102B ALD1102
Advanced Linear Devices
ALD1102A/ALD1102B ALD1102
Advanced Linear Devices

GENERAL DESCRIPTION ALD1102 monolithic dual P-channel matched transist

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