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1025-1150 GOLD METALLIZATION INFINITE VSWR CAPABILITY RATED CONDITIONS


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MS2201
1025-1150 GOLD METALLIZATION INFINITE VSWR CAPABILITY RATED CONDITIONS Pout MINIMUM
DESCRIPTION:
MS2201 silicon NPN, Class microwave transistor designed Class driver applications under pulse conditions. This device capable withstanding infinite load VSWR phase angle under rated conditions.
ABSOLUTE MAXIMUM RATINGS (Tcase 25°C)
Symbol
PDISS Power Dissipation Collector-Supply Voltage Junction Temperature Device Current Storage Temperature
Parameter
Value
+200
Unit
Thermal Data
RTH(J-C) Junction-case Thermal Resistance*
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
MS2201
ELECTRICAL SPECIFICATIONS (Tcase
STATIC
Symbol
BVCBO BVCER BVEBO ICES
Test Conditions
Value Min.
Typ.
Max.
-1.0
Unit
DYNAMIC
Symbol POUT
Conditions:
Test Conditions
=1025 1150 =1025 1150 =1025 1150 250mW 250mW 250mW =35V =35V =35V
Value Min.
Typ.
Max.
Unit
Pulse Width Duty Cycle
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
MS2201
TYPICAL PERFORMANCE
Advanced Power Technology reserves right change, without notice, specifications information contained herein
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MS2201
TEST CIRCUIT
Advanced Power Technology reserves right change, without notice, specifications information contained herein
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MS2201
PACKAGE MECHANICAL DATA
Advanced Power Technology reserves right change, without notice, specifications information contained herein
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