FDS6680AS N-Channel PowerTrench® SyncFET11.5 RDS(ON) RDS(ON) 10.5 Incl

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FDS6680AS N-Channel PowerTrench® SyncFET11.5 RDS(ON) RDS(ON) 10.5 Incl

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FDS6680AS N-Channel PowerTrench® SyncFET
FDS6680AS N-Channel PowerTrench® SyncFET11.5 RDS(ON) RDS(ON) 10.5 Includes SyncFET Schottky body diode gate charge (22nC typical) High performance trench technology extremely RDS(ON) fast switching High power current handling capability
General Description
FDS6680AS designed replace single SO-8 MOSFET Schottky diode synchronous DC:DC power supplies. This MOSFET designed maximize power conversion efficiency, providing RDS(ON) gate charge. FDS6680AS includes integrated Schottky diode using Fairchild's monolithic SyncFET technology. performance FDS6680AS low-side switch synchronous rectifier indistinguishable from performance FDS6680 parallel with Schottky diode.
Applications
DC/DC converter side notebooks
SO-8
Absolute Maximum Ratings 25°C unless otherwise noted
Symbol
VDSS VGSS Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation Single Operation (Note (Note (Note TSTG Operating Storage Junction Temperature Range (Note
Parameter
Ratings
11.5 +150
Units
°C/W °C/W
Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note (Note
Package Marking Ordering Information
Device Marking
FDS6680AS FDS6680AS
Device
FDS6680AS FDS6680AS_NL (Note
Reel Size
Tape width
12mm 12mm
Quantity
2500 units 2500 units
©2005 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FDS6680AS Rev.
FDS6680AS N-Channel PowerTrench® SyncFET
Electrical Characteristics 25°C unless otherwise noted
Symbol
Characteristics BVDSS BVDSS IDSS IGSS VGS(th) VGS(th) RDS(on) Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Referenced 25°C VGS, Referenced 25°C 11.5 11.5 125°C 11.5 12.3 10.5 15.5 ±100 mV/°C
Parameter
Test Conditions
Units
Characteristics (Note Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance mV/°C
ID(on) Ciss Coss Crss td(on) td(off) td(on) td(off) Qg(TOT)
Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance RGEN 1240
Switching Characteristics (Note Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge 11.5 RGEN
FDS6680AS Rev.
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FDS6680AS N-Channel PowerTrench® SyncFET
Electrical Characteristics 25°C unless otherwise noted (Continued)
Symbol
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design. 50°/W when mounted copper 105°/W when mounted copper 125°/W when mounted minimum pad.
Parameter
Test Conditions
Units
Drain-Source Diode Characteristics Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge 11.5A, diF/dt A/µs (Note (Note (Note
Scale letter size paper Pulse Test: Pulse Width 300µs, Duty Cycle 2.0% "SyncFET Schottky body diode characteristics" below. FDS6680AS_NL lead free product. FDS6680AS_NL marking will appear reel label.
FDS6680AS Rev.
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FDS6680AS N-Channel PowerTrench® SyncFET
Typical Characteristics
4.0V 6.0V 4.5V 3.0V 3.5V 3.0V
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
DRAIN CURRENT
3.5V 4.0V 4.5V 5.0V 6.0V 10.0V
2.5V
DRAIN-SOURCE VOLTAGE
DRAIN CURRENT
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
0.05
11.5A
RDS(ON) NORMALIZED DRAIN-SOURCE ON-RESISTANCE
RDS(ON), ON-RESISTANCE (OHM)
0.04
0.03
0.02
125°C
0.01 25°C
JUNCTION TEMPERATURE (°C)
VGS, GATE SOURCE VOLTAGE
Figure On-Resistance Variation with Temperature.
Figure On-Resistance Variation with Gate-to-Source Voltage.
REVERSE DRAIN CURRENT
125°C 25°C 0.01 -55°C 0.001
DRAIN CURRENT
125°C -55°C
25°C VGS, GATE SOURCE VOLTAGE
0.0001 BODY DIODE FORWARD VOLTAGE
Figure Transfer Characteristics.
Figure Body Diode Forward Voltage Variation with Source Current Temperature.
FDS6680AS Rev.
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FDS6680AS N-Channel PowerTrench® SyncFET
Typical Characteristics (continued)
=11.5A 1800 1MHz 1500
VGS, GATE-SOURCE VOLTAGE
CAPACITANCE (pF)
1200 Ciss
Coss
Crss
GATE CHARGE (nC)
DRAIN SOURCE VOLTAGE
Figure Gate Charge Characteristics.
1000
Figure Capacitance Characteristics.
P(pk), PEAK TRANSIENT POWER
RDS(ON) LIMIT 100µs
SINGLE PULSE 125°C/W 25°C
DRAIN CURRENT
SINGLE PULSE 125° 25°C 0.01
10ms 100ms
DRAIN-SOURCE VOLTAGE
0.01
TIME (sec)
1000
Figure Maximum Safe Operating Area.
Figure Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
r(t) °C/W P(pk)
0.01 SINGLE PULSE
0.05 0.02
JA(t) Duty Cycle, t1/t2
0.01
0.001 0.0001
0.001
0.01
TIME (sec)
1000
Figure Transient Thermal Response Curve.
Thermal characterization performed using conditions described Note Transient thermal response will change depending circuit board design.
FDS6680AS Rev.
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FDS6680AS N-Channel PowerTrench® SyncFET
Typical Characteristics (continued)
SyncFET Schottky Body Diode Characteristics
Fairchild's SyncFET process embeds Schottky diode parallel with PowerTrench MOSFET. This diode exhibits similar characteristics discrete external Schottky diode parallel with MOSFET. Figure shows reverse recovery characteristic FDS6680AS. Schottky barrier diodes exhibit significant leakage high temperature high reverse voltage. This will increase power device.
DSS, REVERSE LEAKAGE CURRENT
0.01
125°
0.001 100° 0.0001
3A/DIV
0.00001 25°C 0.000001 REVERSE VOLTAGE
10nS/DIV
Figure SyncFET body diode reverse leakage versus drain-source voltage temperature.
Figure FDS6680AS SyncFET body diode reverse recovery characteristic.
comparison purposes, Figure shows reverse recovery characteristics body diode equivalent size MOSFET produced without SyncFET (FDS6680).
Figure Non-SyncFET (FDS6680) body diode reverse recovery characteristic.
FDS6680AS Rev.
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FDS6680AS N-Channel PowerTrench® SyncFET
Typical Characteristics
BVDSS
0.01
vary obtain required peak
Figure Unclamped Inductive Load Test Circuit
Drain Current Same type
Figure Unclamped Inductive Waveforms
Ig(REF)
QG(TOT)
Charge, (nC)
Figure Gate Charge Test Circuit
Figure Gate Charge Waveform
tOFF td(OFF)
RGEN
td(ON)
Pulse Width Duty Cycle 0.1%
Pulse Width
Figure Switching Time Test Circuit
Figure Switching Time Waveforms
FDS6680AS Rev.
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FDS6680AS N-Channel PowerTrench® SyncFET
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
ACExFAST Quiet Series
Across board. Around world.OPTOLOGIC OPTOPLANARThe Power Franchise PACMANProgrammable Active Droop
QFET QSQT OptoelectronicsQuiet SWITCHER SMART START
SPMStealthSuperFETSuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTinyLogic UniFETVCX
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: critical component component life Life support devices systems devices support device system whose failure perform systems which, intended surgical implant into reasonably expected cause failure life body, support sustain life, whose support device system, affect safety failure perform when properly used accordance with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.
FDS6680AS Rev.
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FDS6680AS N-Channel PowerTrench® SyncFET11.5 RDS(ON) RDS(ON) 10.5 Incl

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