REJ03G0481-0100 Rev.1.00 Nov.26.2004 on-resistance leakage curren

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REJ03G0481-0100 Rev.1.00 Nov.26.2004 on-resistance leakage curren

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H5N2512CF
REJ03G0481-0100 Rev.1.00 Nov.26.2004
on-resistance leakage current High Speed Switching Built-in fast recovery diode
Outline
TO-220CFM
Gate Drain Source
Absolute Maximum Ratings
25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel case Thermal Impedance Channel temperature Storage temperature Notes: duty cycle Value 25°C 150°C Symbol VDSS VGSS ID(pulse) Note IDR(pulse) Note Note ch-c Tstg
Note
Ratings 3.57 +150
Unit °C/W
Rev.1.00, Nov.26.2004, page
H5N2512CF
Electrical Characteristics
25°C)
Item Drain source breakdown voltage Gate source leak current Zero gate voltage drain current Gate source cutoff voltage Static drain source state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate source charge Gate drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Body-drain diode reverse recovery time Notes: Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) td(off) 0.082 2200 0.39 ±0.1 0.105 Unit Test Conditions Note Note 1MHz 13.9 Note4 diF/ A/µs
Rev.1.00, Nov.26.2004, page
H5N2512CF
Package Dimensions
January, 2003
Unit:
10.0
15.0
2.54
2.54
Package Code JEDEC JEITA Mass (reference value)
13.60
1.15
12.0
TO-220CFM
Ordering Information
Part Name H5N3007CF Quantity Stick Shipping Container
Note: Therefore especially small contact area terminal, miss contact occur inadequate soldering condition applied. Contact Renesas sales office question regarding recommended soldering condition Renesas.
Rev.1.00, Nov.26.2004, page
Sales Strategic Planning Div.
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REJ03G0481-0100 Rev.1.00 Nov.26.2004 on-resistance leakage curren

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