FDS6673AZ Volt P-Channel PowerTrench MOSFET General Descript
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FDS6673AZ
FDS6673AZ
Volt P-Channel PowerTrench MOSFET
General Description
This P-Channel MOSFET been designed specifically improve overall efficiency DC/DC converters using either synchronous conventional switching controllers, battery chargers. These MOSFETs feature faster switching lower gate charge than other MOSFETs with comparable RDS(ON) specifications. result MOSFET that easy safer drive (even very high frequencies), DC/DC power supply designs with higher overall efficiency.
Features
-14.5 RDS(ON) RDS(ON) Extended VGSS range (-25V) battery applications protection diode (note High performance trench technology extremely RDS(ON) High power current handling capability
SO-8
Absolute Maximum Ratings
Symbol
VDSS VGSS Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
(Note
Units
-14.5 +175
Power Dissipation Single Operation
(Note (Note (Note
TSTG
Operating Storage Junction Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note
°C/W °C/W
Package Marking Ordering Information
Device Marking FDS6673AZ Device FDS6673AZ Reel Size 13'' Tape width 12mm Quantity 2500 units
FDS6673AZ
2005 Fairchild Semiconductor Corporation
FDS6673AZ
Electrical Characteristics
Symbol
BVDSS BVDSS IDSS IGSS VGS(th) VGS(th) RDS(on)
25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage
(Note
Test Conditions
-250 -250 µA,Referenced 25°C -250 VGS, -250 µA,Referenced 25°C -14.5 -4.5 VGS=-4.5 =-14.5A, TJ=125°C -14.5
Units
Characteristics
mV/°C
Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Forward Transconductance
-1.6
mV/°C
10.4
Ciss Coss Crss td(on) td(off)
Dynamic Characteristics
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note
4480 1190
Switching Characteristics
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
RGEN
-14.5
Drain-Source Diode Characteristics Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward -2.1 Voltage -14.5 Reverse Recovery Time diF/dt A/µs Reverse Recovery Charge -2.1
(Note
-0.7
-1.2
(Note
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
50°C/W sec) 62.5°C/W steady state when mounted 1in2 copper
105°C/W when mounted copper
125°C/W when mounted minimum pad.
Scale letter size paper Pulse Test: Pulse Width 300µs, Duty Cycle 2.0% diode connected between gate source serves only protection against ESD. gate overvoltage rating implied.
FDS6673AZ
FDS6673AZ
Typical Characteristics
-10V -6.0V -ID, DRAIN CURRENT -4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -4.0V -3.5V
-3.5V -ID, DRAIN CURRENT -4.0V -4.5V 3.0V
-3.0V
-5.0V
-6.0V -10V
-VDS, DRAIN SOURCE VOLTAGE
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
0.02 RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
-14.5A -10V
-7.3A 0.02
0.02
0.01
0.01
25oC
0.00
JUNCTION TEMPERATURE
-VGS, GATE SOURCE VOLTAGE
Figure On-Resistance Variation with Temperature.
-55oC
Figure On-Resistance Variation with Gate-to-Source Voltage.
-IS, REVERSE DRAIN CURRENT
125oC 0.01
-ID, DRAIN CURRENT
-VGS, GATE SOURCE VOLTAGE
0.001 -VSD, BODY DIODE FORWARD VOLTAGE
Figure Transfer Characteristics.
Figure Body Diode Forward Voltage Variation with Source Current Temperature.
FDS6673AZ
FDS6673AZ
Typical Characteristics
-VGS, GATE-SOURCE VOLTAGE -14.5A CAPACITANCE (pF) -20V -10V -15V
6000 5000 4000 3000 2000 1000 CRSS CISS
COSS
GATE CHARGE (nC)
-VDS, DRAIN SOURCE VOLTAGE
Figure Gate Charge Characteristics.
100µs
P(pk), PEAK TRANSIENT POWER
Figure Capacitance Characteristics.
-ID, DRAIN CURRENT
RDS(ON) LIMIT
10ms 100ms
SINGLE PULSE 125°C/W 25°C
-10V SINGLE PULSE 125oC/W
0.01 0.01
0.001
0.01
TIME (sec)
1000
-VDS, DRAIN-SOURCE VOLTAGE
Figure Maximum Safe Operating Area.
Figure Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
RJA(t) r(t) P(pk)
SINGLE PULSE 0.01
0.05 0.02
0.01
RJA(t) Duty Cycle,
0.001 0.0001
0.001
0.01
TIME (sec)
1000
Figure Transient Thermal Response Curve.
Thermal characterization performed using conditions described Note Transient thermal response will change depending circuit board design.
FDS6673AZ
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
ACExFAST Quiet Series
Across board. Around world.OPTOLOGIC OPTOPLANARThe Power Franchise PACMANProgrammable Active Droop
QFET QSQT OptoelectronicsQuiet SWITCHER SMART START
SPMStealthSuperFETSuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTinyLogic UniFETVCX
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: critical component component life Life support devices systems devices support device system whose failure perform systems which, intended surgical implant into reasonably expected cause failure life body, support sustain life, whose support device system, affect safety failure perform when properly used accordance with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.
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