Small Signal Schottky Barrier Diodes Integrated protection ring a

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Small Signal Schottky Barrier Diodes Integrated protection ring a

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LS101A-LS101C
Small Signal Schottky Barrier Diodes
Integrated protection ring against
static discharge
capacitance leakage current forward voltage drop
Applications
HF-Detector Protection circuit Diode currents with supply voltage Small battery charger Power supplies converter notebooks
12009
Order Instruction
Type LS101A LS101B LS101C Type Differentiation VR=60 VF@IF1mA max. 0.41 VR=50 VF@IF1mA max. VR=40 VF@IF1mA max. 0.39 Ordering Code LS101A-GS08 LS101B-GS08 LS101C-GS08 Remarks Tape Reel
Absolute Maximum Ratings
25_C Parameter Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Junction temperature Storage temperature range tp=10ms Test Conditions Type LS101A LS101B LS101C Symbol IFSM IFRM Tstg Value -65.+150 Unit
Maximum Thermal Resistance
25_C Parameter Junction ambient Test Conditions board mmx50 mmx1.6 Symbol RthJA Value Unit
Document Number 85628 Rev. 18-Jul-00
www.vishay.com
LS101A-LS101C
Vishay Semiconductors Electrical Characteristics
25_C Parameter Reverse Breakdown Voltage Test Conditions IR=10mA IF=1mA Forward voltage drop IF=15mA Type LS101A LS101B LS101C LS101A LS101B LS101C LS101A LS101B LS101C LS101A LS101B LS101C LS101A LS101B LS101C Symbol V(BR)R V(BR)R V(BR)R Unit
Leakage current
Diode capacitance
1MHz
0.41 0.39 0.95
Characteristics 25_C unless otherwise specified)
100.00
Tj=150°C
Diode Capacitance Reverse Voltage
16205
Tj=25°C
Reverse Current
Tj=125°C
10.00
Tj=100°C
1.00
Tj=75°C Tj=50°C
0.10
Tj=25°C
0.01
16204
Reverse Voltage
Figure Reverse Current Reverse Voltage
Figure Diode Capacitance Reverse Voltage
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Document Number 85628 Rev. 18-Jul-00
LS101A-LS101C
10.00
Forward Current
1.00
0.10
0.01
16206
Forward Voltage
Figure Forward Current Forward Voltage
Dimensions
12071
Document Number 85628 Rev. 18-Jul-00
www.vishay.com
LS101A-LS101C
Vishay Semiconductors Ozone Depleting Substances Policy Statement
policy Vishay Semiconductor GmbH Meet present future national international statutory requirements. Regularly continuously improve performance products, processes, distribution operating systems with respect their impact health safety employees public, well their impact environment. particular concern control eliminate releases those substances into atmosphere which known ozone depleting substances ODSs Montreal Protocol 1987 London Amendments 1990 intend severely restrict ODSs forbid their within next years. Various national international initiatives pressing earlier these substances. Vishay Semiconductor GmbH been able policy continuous improvements eliminate ODSs listed following documents. Annex list transitional substances Montreal Protocol London Amendments respectively Class ozone depleting substances Clean Amendments 1990 Environmental Protection Agency Council Decision 88/540/EEC 91/690/EEC Annex transitional substances respectively. Vishay Semiconductor GmbH certify that semiconductors manufactured with ozone depleting substances contain such substances.
reserve right make changes improve technical design without further notice. Parameters vary different applications. operating parameters must validated each customer application customer. Should buyer Vishay-Semiconductors products unintended unauthorized application, buyer shall indemnify Vishay-Semiconductors against claims, costs, damages, expenses, arising directly indirectly, claim personal damage, injury death associated with such unintended unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 7131 2831, number: 7131 2423
www.vishay.com
Document Number 85628 Rev. 18-Jul-00

Small Signal Schottky Barrier Diodes Integrated protection ring a

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