M3D300 Rev. December 2002 Objective data Product profil
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BUK7226-100B
M3D300
Rev. December 2002
Objective data
Product profile
Description
N-channel enhancement mode field-effect power transistor plastic package using Philips High-Performance Automotive (HPA) TrenchMOStechnology, featuring very on-state resistance. Product availability: BUK7226-100B SOT428 (D-PAK)
Features
TrenchMOStechnology rated Q101 compliant Standard level compatible
Applications
Automotive systems Motors, lamps solenoids loads General purpose power switching
Quick reference data
EDS(AL)S RDSon (typ) Ptot
Pinning information
Table Pinning SOT428 (D-PAK), simplified outline symbol Simplified outline
Description gate drain source mounting base; connected drain
Symbol
MBB076
view
MBK091
SOT428 (D-PAK)
possible make connection SOT428 package.
Philips Semiconductors
BUK7226-100B
Limiting values
Table Limiting values accordance with Absolute Maximum Rating System (IEC 60134). Symbol VDGR Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Figure Figure Ptot Tstg IDRM EDS(AL)S peak drain current total power dissipation storage temperature junction temperature reverse drain current (DC) peak reverse drain current non-repetitive avalanche energy pulsed; unclamped inductive load; starting pulsed; Figure Figure Conditions +175 +175 Unit
Source-drain diode
Avalanche ruggedness
9397 10802
Koninklijke Philips Electronics N.V. 2002. rights reserved.
Objective data
Rev. December 2002
Philips Semiconductors
BUK7226-100B
Pder
03na19
03nl33
(°C)
(°C)
100%
Normalized total power dissipation function mounting base temperature.
Continuous drain current function mounting base temperature.
03nl31
limit RDSon VDS/ID
single pulse.
Safe operating area; continuous peak drain currents function drain-source voltage.
9397 10802
Koninklijke Philips Electronics N.V. 2002. rights reserved.
Objective data
Rev. December 2002
Philips Semiconductors
BUK7226-100B
Thermal characteristics
Table Symbol Rth(j-a) Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction ambient thermal resistance from junction mounting base Figure Conditions 71.4 0.45 Unit
Transient thermal impedance
Zth(j-mb) (K/W) 10-1 0.05 0.02
03nl34
10-2 single shot
10-3 10-6 10-5 10-4 10-3 10-2 10-1
Transient thermal impedance from junction mounting base function pulse duration.
9397 10802
Koninklijke Philips Electronics N.V. 2002. rights reserved.
Objective data
Rev. December 2002
Philips Semiconductors
BUK7226-100B
Characteristics
Table Characteristics unless otherwise specified. Symbol V(BR)DSS Parameter drain-source breakdown voltage Conditions 0.25 VGS(th) gate-source threshold voltage VGS; Figure IDSS drain-source leakage current IGSS RDSon gate-source leakage current drain-source on-state resistance Figure Dynamic characteristics Qg(tot) Ciss Coss Crss td(on) td(off) total gate charge gate-source charge gate-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time internal drain inductance internal source inductance measured from drain centre measured from source lead source bond Figure dIS/dt -100 A/µs MHz; Figure 10V; Figure 2092 2789 0.02 Unit Static characteristics
Source-drain diode source-drain (diode forward) voltage reverse recovery time recovered charge 0.85
9397 10802
Koninklijke Philips Electronics N.V. 2002. rights reserved.
Objective data
Rev. December 2002
Philips Semiconductors
BUK7226-100B
Label
03nl28
RDSon
03nl27
Output characteristics: drain current function drain-source voltage; typical values.
Drain-source on-state resistance function gate-source voltage; typical values.
RDSon Label
03nl29
03ng41
300µs
DSon DSon Normalized drain-source on-state resistance factor function junction temperature.
Drain-source on-state resistance function drain current; typical values.
9397 10802
Koninklijke Philips Electronics N.V. 2002. rights reserved.
Objective data
Rev. December 2002
Philips Semiconductors
BUK7226-100B
VGS(th)
03aa32
10-1 10-2
03aa35
10-3
10-4
10-5
(°C)
10-6
Gate-source threshold voltage function junction temperature.
Sub-threshold drain current function gate-source voltage.
03nl25
3000 Ciss (pF) 2000 Coss
03nl30
1000 Crss
10-1
Forward transconductance function drain current; typical values.
Input, output reverse transfer capacitances function drain-source voltage; typical values.
9397 10802
Koninklijke Philips Electronics N.V. 2002. rights reserved.
Objective data
Rev. December 2002
Philips Semiconductors
BUK7226-100B
03nl26
03nl24
(nC)
Transfer characteristics: drain current function gate-source voltage; typical values.
Gate-source voltage function turn-on gate charge; typical values.
03nl23
Reverse diode current function reverse diode voltage; typical values.
9397 10802
Koninklijke Philips Electronics N.V. 2002. rights reserved.
Objective data
Rev. December 2002
Philips Semiconductors
BUK7226-100B
Package outline
Plastic single-ended surface mounted package (Philips version D-PAK); leads (one lead cropped) SOT428
seating plane mounting base
scale
DIMENSIONS original dimensions) UNIT 2.38 2.22 A1(1) 0.65 0.45 0.93 0.73 0.89 0.71 5.46 5.26 6.22 5.98 min. 6.73 6.47 10.4 2.95 2.55 min. max.
4.81 2.285 4.57 4.45
Note Measured from heatsink back lead. OUTLINE VERSION SOT428 REFERENCES JEDEC TO-252 JEITA SC-63 EUROPEAN PROJECTION ISSUE DATE 99-09-13 01-12-11
SOT428 (D-PAK)
9397 10802 Koninklijke Philips Electronics N.V. 2002. rights reserved.
Objective data
Rev. December 2002
Philips Semiconductors
BUK7226-100B
Revision history
Table Date 20021210 Revision history CPCN Description Objective data (9397 10802)
9397 10802
Koninklijke Philips Electronics N.V. 2002. rights reserved.
Objective data
Rev. December 2002
Philips Semiconductors
BUK7226-100B
Data sheet status
Level Data sheet status[1] Objective data Preliminary data Product status[2][3] Development Qualification Definition This data sheet contains data from objective specification product development. Philips Semiconductors reserves right change specification manner without notice. This data sheet contains data from preliminary specification. Supplementary data will published later date. Philips Semiconductors reserves right change specification without notice, order improve design supply best possible product. This data sheet contains data from product specification. Philips Semiconductors reserves right make changes time order improve design, manufacturing supply. Relevant changes will communicated Customer Product/Process Change Notification (CPCN).
Product data
Production
Please consult most recently issued data sheet before initiating completing design. product status device(s) described this data sheet have changed since this data sheet published. latest information available Internet data sheets describing multiple type numbers, highest-level product status determines data sheet status.
Definitions
Short-form specification data short-form specification extracted from full data sheet with same type number title. detailed information relevant data sheet data handbook. Limiting values definition Limiting values given accordance with Absolute Maximum Rating System (IEC 60134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Applications that described herein these products illustrative purposes only. Philips Semiconductors make representation warranty that such applications will suitable specified without further testing modification.
customers using selling these products such applications their risk agree fully indemnify Philips Semiconductors damages resulting from such application. Right make changes Philips Semiconductors reserves right make changes products including circuits, standard cells, and/or software described contained herein order improve design and/or performance. When product full production (status `Production'), relevant changes will communicated Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes responsibility liability these products, conveys licence title under patent, copyright, mask work right these products, makes representations warranties that these products free from patent, copyright, mask work right infringement, unless otherwise specified.
Trademarks
TrenchMOS trademark Koninklijke Philips Electronics N.V.
Disclaimers
Life support These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips Semiconductors
Contact information
additional information, please visit sales office addresses, send e-mail
9397 10802
Fax: 24825
Koninklijke Philips Electronics N.V. 2002. rights reserved.
Objective data
Rev. December 2002
Philips Semiconductors
BUK7226-100B
Contents
Product profile Description Features Applications Quick reference data. Pinning information Limiting values. Thermal characteristics. Transient thermal impedance Characteristics Package outline Revision history Data sheet status Definitions Disclaimers Trademarks.
Koninklijke Philips Electronics N.V. 2002. Printed Netherlands
rights reserved. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice. liability will accepted publisher consequence use. Publication thereof does convey imply license under patent- other industrial intellectual property rights. Date release: December 2002 Document order number: 9397 10802
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