GENERAL DESCRIPTION ALD1101 monolithic dual N-channel matched transist

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GENERAL DESCRIPTION ALD1101 monolithic dual N-channel matched transist

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ALD1101A/ALD1101B ALD1101 DUAL N-CHANNEL MATCHED MOSFET PAIR
GENERAL DESCRIPTION ALD1101 monolithic dual N-channel matched transistor pair intended broad range analog applications. These enhancementmode transistors manufactured with Advanced Linear Devices' enhanced ACMOS silicon gate CMOS process. ALD1101 offers high input impedance negative current temperature coefficient. transistor pair matched minimum offset voltage differential thermal response, designed switching amplifying applications +12V systems where input bias current, input capacitance fast switching speed desired. Since these MOSFET devices, they feature very large (almost infinite) current gain frequency, near operating environment. When used with ALD1102, dual CMOS analog switch constructed. addition, ALD1101 intended building block differential amplifier input stages, transmission gates, multiplexer applications. ALD1101 suitable precision applications which require very high current gain, beta, such current mirrors current sources. high input impedance high current gain Field Effect Transistors result extremely current loss through control gate. current gain limited gate input leakage current, which specified 50pA room temperature. example, beta device drain current 25°C 5mA/50pA 100,000,000.
APPLICATIONS Precision current mirrors Precision current sources Analog switches Choppers Differential amplifier input stage Voltage comparator Data converters Sample Hold Analog inverter
CONFIGURATION
SOURCE GATE DRAIN
VIEW PACKAGE
SUBSTRATE SOURCE GATE DRAIN
FEATURES threshold voltage 0.7V input capacitance grades 2mV, 5mV, 10mV High input impedance 1012 typical Negative current (IDS) temperature coefficient Enhancement-mode (normally off) current gain
BLOCK DIAGRAM
ORDERING INFORMATION
Operating Temperature Range* -55°C +125°C +70°C +70°C 8-Pin CERDIP Package 8-Pin Plastic Package ALD1101A ALD1101B ALD1101 8-Pin SOIC Package
DRAIN
GATE
SOURCE SUBSTRATE
DRAIN
SOURCE
GATE
ALD1101
ALD1101
Contact factory industrial temperature range.
1998 Advanced Linear Devices, Inc. Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, Gate-source voltage, Power dissipation Operating temperature range Storage temperature range Lead temperature, seconds 13.2V 13.2V +70°C -55°C +125°C -65°C +150°C +260°C
package package
OPERATING ELECTRICAL CHARACTERISTICS 25°C unless otherwise specified
Parameter Gate Threshold Voltage Offset Voltage VGS1 VGS2 Symbol -1.2 1101A -1.2 ALD1101B -1.2 ALD1101 Unit mV/°C Test Conditions 10µA 100µA
Gate Threshold TCVT Temperature Drift Drain Current (ON)
mmho µmho
IDS= 10mA
Transconductance Mismatch Output Conductance Drain Source Resistance Drain Source Resistance Mismatch Drain Source Breakdown Voltage Drain Current RDS(ON)
10mA 0.1V
RDS(ON)
0.1V
BVDSS IDS(OFF)
10µA =12V 125°C =12V 125°C
Gate Leakage Current Input Capacitance
IGSS
CISS
ALD1101A/ALD1101B ALD1101
Advanced Linear Devices
TYPICAL PERFORMANCE CHARACTERISITCS
OUTPUT CHARACTERISTICS
VOLTAGE OUTPUT CHARACTERISTICS
DRAIN-SOURCE CURRENT (mA)
25°C
DRAIN -SOURCE CURRENT (mA)
25°C
DRAIN-SOURCE VOLTAGE
-160
DRAIN -SOURCE VOLTAGE (mV)
FORWARD TRANSCONDUCTANCE (µmho)
x105 x104 x104
FORWARD TRANSCONDUCTANCE DRAIN-SOURCE VOLTAGE
TRANSFER CHARACTERISTIC WITH SUBSTRATE BIAS
DRAIN-SOURCE CURRENT (µA)
1KHz +125°C +25°C
10mA
25°C -10V -12V
x104 x103 x103 x103
DRAIN -SOURCE VOLTAGE
GATE SOURCE VOLTAGE
(ON) GATE SOURCE VOLTAGE
DRAIN SOURCE RESISTANCE
DRAIN SOURCE CURRENT
10000 0.2V 1000 +125°C
10X10-6
DRAIN CURRENT TEMPERATURE
+12V
10X10-9
+25°C
10X10-12 +100 +125
GATE SOURCE VOLTAGE
TEMPERATURE (°C)
ALD1101A/ALD1101B ALD1101
Advanced Linear Devices
ALD1101A/ALD1101B ALD1101
Advanced Linear Devices

GENERAL DESCRIPTION ALD1101 monolithic dual N-channel matched transist

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