REJ03G0026-0200Z Rev.2.00 Jun.25.2004 on-resistance leakage curre

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REJ03G0026-0200Z Rev.2.00 Jun.25.2004 on-resistance leakage curre

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H5N2305PF
REJ03G0026-0200Z Rev.2.00 Jun.25.2004
on-resistance leakage current High speed switching
Outline
TO-3PFM
Gate Drain Source
Rev.2.00, Jun.25.2004, page
H5N2305PF
Absolute Maximum Rating
25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Symbol VDSS VGSS (pulse)Note1 (pulse)Note1 2.08 +150 Rating Unit
Avalanche current Note3 Channel dissipation Note2 Channel case thermal impedance ch-c Channel temperature Storage temperature Tstg Notes: duty cycle Value 25°C STch 25°C, 150°C
Rev.2.00, Jun.25.2004, page
H5N2305PF
Electrical Characteristics
25°C)
Item Drain Source breakdown voltage Zero gate voltage drain current Gate source leak current Gate source cutoff voltage Forward transfer admittance Static drain source state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate source charge Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) td(off) 0.030 5200 0.92 ±0.1 0.038 Unit Test condition 17.5A, VNote4 17.5A, VNote4 17.5 0Note4 diF/dt A/µs
Gate drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Body-drain diode reverse recovery charge Notes: Pulse test
Rev.2.00, Jun.25.2004, page
H5N2305PF
Main Characteristics
Power Temperature Derating 1000 Maximum Safe Operation Area
Operation this area
Channel Dissipation
Drain Current
ratio
limited RDS(on)
(°C)
Case Temperature
0.03 25°C 0.01 1000 Drain Source Voltage
Typical Output Characteristics Pulse Test
Typical Transfer Characteristics Pulse Test
Drain Current
Drain Current
Drain Source Voltage
75°C 25°C
-25°C
Gate Source Voltage
Rev.2.00, Jun.25.2004, page
H5N2305PF
Drain Source Saturation Voltage Gate Source Voltage
Drain Source Saturation Voltage VDS(on)
Pulse Test
Drain Source State Resistance RDS(on)
Static Drain Source State Resistance Drain Current Pulse Test V,15V 0.05
17.5 Gate Source Voltage
0.02
0.01 Drain Current 1000
Static Drain Source State Resistance RDS(on)
Forward Transfer Admittance |yfs|
Static Drain Source State Resistance Temperature Pulse Test 0.08 17.5 0.04
Forward Transfer Admittance Drain Current Pulse Test 1000 75°C 25°C -25°C
0.06
0.02
Case Temperature (°C)
Drain Current
Rev.2.00, Jun.25.2004, page
H5N2305PF
Body-Drain Diode Reverse Recovery Time
10000 5000
1000
Reverse Recovery Time (ns)
Typical Capacitance Drain Source Voltage Ciss
Capacitance (pF)
2000 1000
Coss
Crss Drain Source Voltage
Reverse Drain Current
25°C
Dynamic Input Characteristics
Switching Time (ns)
Gate Source Voltage
Drain Source Voltage
10000
Switching Characteristics duty
1000
d(off)
d(on) 1000 Drain Current
Gate Charge
(nC)
Rev.2.00, Jun.25.2004, page
H5N2305PF
Reverse Drain Current Source Drain Voltage
Gate Source Cutoff Voltage VGS(off)
Gate Source Cutoff Voltage Case Temperature
Reverse Drain Current
Pulse Test Source Drain Voltage
(°C)
Case Temperature
Switching Time Test Circuit Monitor D.U.T. Vout Vout Monitor
Waveform
td(off)
td(on)
Rev.2.00, Jun.25.2004, page
H5N2305PF
Normalized Transient Thermal Impedance Pulse Width
Normalized Transient Thermal Impedance
25°C
0.05
0.03 0.01
0.02 0.01
c(t) 2.08°C/W, 25°C
0.003 0.001
Pulse Width
Rev.2.00, Jun.25.2004, page
H5N2305PF
Package Dimensions
January, 2003
Unit:
15.6
19.9
0.66 5.45
21.0
0.86
0.86
5.45
Package Code JEDEC JEITA Mass (reference value)
TO-3PFM
Ordering Information
Part Name Quantity Shipping Container H5N2305PF-E Plastic magazine Note: some grades, production terminated. Please contact Renesas sales office check state production before ordering product.
Rev.2.00, Jun.25.2004, page
Sales Strategic Planning Div.
Keep safety first your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Renesas Technology Corp. puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corp. product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corp. third party. Renesas Technology Corp. assumes responsibility damage, infringement third-party's rights, originating product data, diagrams, charts, programs, algorithms, circuit application examples contained these materials. information contained these materials, including product data, diagrams, charts, programs algorithms represents information products time publication these materials, subject change Renesas Technology Corp. without notice product improvements other reasons. therefore recommended that customers contact Renesas Technology Corp. authorized Renesas Technology Corp. product distributor latest product information before purchasing product listed herein. information described here contain technical inaccuracies typographical errors. Renesas Technology Corp. assumes responsibility damage, liability, other loss rising from these inaccuracies errors. Please also attention information published Renesas Technology Corp. various means, including Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). When using information contained these materials, including product data, diagrams, charts, programs, algorithms, please sure evaluate information total system before making final decision applicability information products. Renesas Technology Corp. assumes responsibility damage, liability other loss resulting from information contained herein. Renesas Technology Corp. semiconductors designed manufactured device system that used under circumstances which human life potentially stake. Please contact Renesas Technology Corp. authorized Renesas Technology Corp. product distributor when considering product contained herein specific purposes, such apparatus systems transportation, vehicular, medical, aerospace, nuclear, undersea repeater use. prior written approval Renesas Technology Corp. necessary reprint reproduce whole part these materials. these products technologies subject Japanese export control restrictions, they must exported under license from Japanese government cannot imported into country other than approved destination. diversion reexport contrary export control laws regulations Japan and/or country destination prohibited. Please contact Renesas Technology Corp. further details these materials products contained therein.
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Renesas Technology America, Inc. Holger Way, Jose, 95134-1368, U.S.A Tel: (408) 382-7500 Fax: (408) 382-7501 Renesas Technology Europe Limited. Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, 5FH, United Kingdom Tel: <44> (1628) 100, Fax: <44> (1628) Renesas Technology Europe GmbH Dornacher Str. D-85622 Feldkirchen, Germany Tel: <49> (89) Fax: <49> (89) Renesas Technology Hong Kong Ltd. 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2375-6836 Renesas Technology Taiwan Co., Ltd. #99, Fu-Hsing Rd., Taipei, Taiwan Tel: <886> 2715-2888, Fax: <886> 2713-2999 Renesas Technology (Shanghai) Co., Ltd. 26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. Harbour Front Avenue, #06-10, Keppel Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001
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REJ03G0026-0200Z Rev.2.00 Jun.25.2004 on-resistance leakage curre

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