REJ03G0371-0100Z Rev.1.00 May.28.2004 on-resistance leakage curre
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H5N2517FN
REJ03G0371-0100Z Rev.1.00 May.28.2004
on-resistance leakage current High speed switching
Outline
TO-220FN
Gate Drain Source
Absolute Maximum Ratings
25°C)
Item Drain Source voltage Gate Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel case thermal impedance Channel temperature Storage temperature Notes: duty cycle Value 25°C STch 25°C, 150°C Symbol VDSS VGSS Note1 (pulse) (pulse)Note1 IAPNote3 EARNote3 Note2 ch-c Tstg Ratings 4.17 +150 Unit °C/W
Rev.1.00, May.28.2004, page
H5N2517FN
Electrical Characteristics
25°C)
Item Drain Source breakdown voltage Zero Gate voltage drain current Gate Source leak current Gate Source cutoff voltage Forward transfer admittance Static Drain Source state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate charge Gate Source charge Gate Drain charge Body-Drain diode forward voltage Body-Drain diode reverse recovery time Body-Drain diode reverse recovery charge Notes: Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) td(off) 0.055 2200 ±0.1 0.072 Unit Test conditions Note4 VNote4 12.5 Note4 diF/dt A/µs
Rev.1.00, May.28.2004, page
H5N2517FN
Main Characteristics
Power Temperature Derating
Maximum Safe Operation Area 1000
Operation 0.03
this area limited RDS(on)
Channel Dissipation
Drain Current
(°C)
Case Temperature
25°C 0.01 1000 Drain Source Voltage Typical Transfer Characteristics Pulse Test
Typical Output Characteristics Pulse Test
Drain Current
Drain Current
Drain Source Voltage
75°C
25°C -25°C
Gate Source Voltage
Drain Source Saturation Voltage Gate Source Voltage
Drain Source Saturation Voltage VDS(on)
Pulse Test
17.5 Gate Source Voltage
Drain Source State Resistance RDS(on)
Static Drain Source State Resistance Drain Current Pulse Test
0.05
0.02
0.01 Drain Current
Rev.1.00, May.28.2004, page
H5N2517FN
Static Drain Source State Resistance Temperature 0.200 Pulse Test 0.160 Forward Transfer Admittance Drain Current
Forward Transfer Admittance |yfs|
Static Drain Source State Resistance RDS(on)
-25°C 25°C Pulse Test 75°C
0.120
17.5
0.080 0.040
Case Temperature (°C) Body-Drain Diode Reverse Recovery Time
Drain Current
Typical Capacitance Drain Source Voltage
10000 5000
1000
Reverse Recovery Time (ns)
Capacitance (pF)
Ciss
2000 1000
Coss
25°C Reverse Drain Current Dynamic Input Characteristics
Crss
Drain Source Voltage
10000
Switching Characteristics duty
Gate Source Voltage
Switching Time (ns)
Drain Source Voltage
1000
d(off)
d(on)
Gate Charge (nC)
Drain Current
Rev.1.00, May.28.2004, page
H5N2517FN
Reverse Drain Current Source Drain Voltage Gate Source Cutoff Voltage Case Temperature 10mA
Gate Source Cutoff Voltage GS(off)
Reverse Drain Current
0.1mA
Pulse Test
(°C)
Source Drain Voltage
Case Temperature
Normalized Transient Thermal Impedance Pulse Width 25°C
Normalized Transient Thermal Impedance
0.05
0.03
0.02
0.01
c(t) 4.17°C/W, 25°C
0.003
0.001
Pulse Width
Rev.1.00, May.28.2004, page
H5N2517FN
Switching Time Test Circuit Monitor D.U.T. Vout td(on) td(off) Vout Monitor Waveform
Rev.1.00, May.28.2004, page
H5N2517FN
Package Dimensions
TO-220FN
EIAJ Package Code JEDEC Code Mass (reference value)
Lead Material
alloy
0.75 0.15
0.75 0.15
2.54 0.25
2.54 0.25
Symbol
Note dimensional figures indicate representative values unless otherwise tolerance specified.
Ordering Information
Part Name Quantity Shipping Container H5N2517FN-E Plastic magazine Note: some grades, production terminated. Please contact Renesas sales office check state production before ordering product.
Rev.1.00, May.28.2004, page
Dimension Millimeters
Sales Strategic Planning Div.
Keep safety first your circuit designs!
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