TYPE STP20N10 0.12 TYPICAL RDS(on) 0.09 AVALANCHE RUGGED TEC

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TYPE STP20N10 0.12 TYPICAL RDS(on) 0.09 AVALANCHE RUGGED TEC

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STP20N10
TYPE STP20N10
0.12
TYPICAL RDS(on) 0.09 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA 100oC GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION
TO-220
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID RELAY DRIVERS REGULATORS DC-DC DC-AC CONVERTERS MOTOR CONTROL, AUDIO AMPLIFIERS AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Drain-source Voltage Drain- gate Voltage Gate-source Voltage Drain Current (continuous) Drain Current (continuous) Drain Current (pulsed) Total Dissipation Derating Factor Storage Temperature Max. Operating Junction Temperature
Value
Unit
Pulse width limited safe operating area
December 1996
STP20N10
THERMAL DATA
thj-cas Rthj- Rthj- Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature Soldering Purpose 1.43 62.5
AVALANCHE CHARACTERISTICS
Symbol Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max, Single Pulse Avalanche Energy (starting Repetitive Avalanche Energy (pulse width limited max, Avalanche Current, Repetitive Not-Repetitive pulse width limited max, Value Unit
ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified)
Symbol BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions Min. Typ. Max. Unit
Zero Gate Voltage Rating Drain Current Rating Gate-body Leakage Current
Symbol S(th) Parameter Gate Threshold Voltage Static Drain-source Resistance State Drain Current Test Conditions Min. Typ. 0.09 Max. 0.12 Unit
S(on)
DYNAMIC
Symbol Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions S(on) Min. Typ. 1100 Max. Unit
STP20N10
ELECTRICAL CHARACTERISTICS (continued) SWITCHING
Symbol d(on) (di/dt) Parameter Turn-on Time Rise Time Turn-on Current Slope Test Conditions (see test circuit, figure (see test circuit, figure Min. Typ. Max. Unit A/µs
Total Gate Charge Gate-Source Charge Gate-Drain Charge
SWITCHING
Symbol r(Vof Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions (see test circuit, figure Min. Typ. Max. Unit
SOURCE DRAIN DIODE
Symbol Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current 0.44 di/dt A/µs (see test circuit, figure Test Conditions Min. Typ. Max. Unit
Pulsed: Pulse duration duty cycle Pulse width limited safe operating area
Safe Operating Areas
Thermal Impedance
STP20N10
Derating Curve
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source Resistance
Gate Charge Gate-source Voltage
STP20N10
Capacitance Variations
Normalized Gate Threshold Voltage Temperature
Normalized Resistance Temperature
Turn-on Current Slope
Turn-off Drain-source Voltage Slope
Cross-over Time
STP20N10
Switching Safe Operating Area
Accidental Overload Area
Source-drain Diode Forward Characteristics
Fig. Unclamped Inductive Load Test Circuits
Fig. Unclamped Inductive Waveforms
STP20N10
Fig. Switching Times Test Circuits Resistive Load
Fig. Gate Charge Test Circuit
Fig. Test Circuit Inductive Load Switching Diode Recovery Times
STP20N10
TO-220 MECHANICAL DATA
DIM. MIN. DIA. 13.0 2.65 15.25 3.75 0.49 0.61 1.14 1.14 4.95 10.0 16.4 14.0 2.95 15.75 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107
Dia.
P011C
STP20N10
Information furnished believed accurate reliable. However, SGS-THOMSON Microelectronics assumes responsability consequ ences such information infringement patents other rights third parties which results from use. license granted implication otherwise under patent patent rights SGS-THOMSON Microelectronics. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. SGS-THOMSON Microelectronics products authorized critical compone life support devices systems without express written approval SGS-THOMSON Microelectonics. 1996 SGS-THOMSON Microelectronics Printed Italy Rights Reserved SGS-THOMSON Microelectronics GROUP COMPANIES Australia Brazil Canada China France Germany Hong Kong Italy Japan Korea Malaysia Malta Morocco Netherlands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U.S.A

TYPE STP20N10 0.12 TYPICAL RDS(on) 0.09 AVALANCHE RUGGED TEC

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