Silicon Temperature Sensors Introduction temperature sensor devel

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

Silicon Temperature Sensors Introduction temperature sensor devel

Datasheet Thumbnail

Top Searches for this datasheet

Silicon Temperature Sensors
Silicon Temperature Sensors Introduction
temperature sensor developed Infineon Technologies based principle Spreading Resistance. expression "Spreading Resistance" derives from method, called "one-pointmethod" (Figure used measure specific resistivity semiconductor wafers. resistance given
where:
Sensor resistance Specific resistivity bulk Silicon Diameter measuring point (cm)
This measurement independent thickness, diameter wafer, long contact point diameter negligibly small comparison. addition, contact resistance between semiconductor metal also measured.
Figure Measuring Specific Resistance Semiconductors Using "One-point Method" conventional temperature sensor based principle spreading resistance, contact hole oxide mask serves measuring point (Figure 20). order comply with measuring principle, hole diameter must negligibly small compared chip dimensions. essential feature spreading resistance sensor that contains junction.
Data Book
2000-07-01
Silicon Temperature Sensors
Figure Conventional Spreading Resistance Temperature Sensor basic conduction mechanism explained looking single Si-crystal. normal temperatures crystal locations ionised, increase temperature does lead increase number charge carriers. However, increased lattice energy associated with rise temperature leads increase phonon scatter within crystal thereby increases resistance. Si-temperature sensor based spreading resistance principle therefore positive temperature coefficient (Figure 21).
Figure Change Specific Conductivity Silicon with Reciprical Temperature temperature range dislocation creation limited intrinsic conductivity process higher temperatures dislocation reserves temperatures. This gives natural boundary measurement range Spreading resistance sensor, dependent crystal doping. specific resistance about
Data Book 2000-07-01
Silicon Temperature Sensors
results factor (100 °C/25 1.70. With hole diameter this gives resistance value 1000 conventional spreading resistance temperature sensor current flow spreads from contact hole oxide mask chip surface through rearside chip (Figure 19).This construction assymmetric and, non-ohmic contact between metalisation silicon, produces resistor which dependent current direction. overcome this, symmetric construction selected temperature sensor (Figure 22). Here, spreading-resistance sensors series with another, current through sensor then flows through identical contact holes oxide mask. With this arrangement sensor capacitance; this means that sensor protected against high voltages. With optimised values hole diameter sensor resistance defined 1000) 2000
Figure Schematic Cross Section through Temperature Sensor Chip
Figure View Sensor Chip
Data Book 2000-07-01
Silicon Temperature Sensors
Technology Temperature Sensor
Photolithography with image definitions micron range used produce temperature sensor. double layer Oxide Nitride chip surface serves insulation film. After deposition contact areas, this again covered with plasma nitride, only that over contact point being etched away allow bonding. chip produced this process thereby fully passivated against environmental influences. order increase yield chips wafer which fall into tightest possible tolerance band, neutron activated material used production sensors. this doping method silicon wafer implanted with neutrons nuclear reactor which change Si-atoms into P-atoms. This method allows only precise doping level 0,1%), also gives exceptionally high homogeneity Tolerance doping level instead with normal material quality contact back Silicon chip metal lead frame further factor influencing resistance value conventional spreading resistor sensor. With sensor chip rear side coated with Gold alloyed lead frame. comparison conventionally used adhesive solution this leads higher stability bonding between sensor chip lead frame. restrictions placed contact holes decisive reproducibility long term stability. sensor multi-layer metalisation employed opposed conventional Al-Metalisation. This multi-layer metalisation Ti-Pt-Au, developed industrial microwave components which normally have very high current densities which place strong demands reliability. This together with Au-thermocompression bondwire contacting assures high reliability sensor. Figure shows results long-term high temperature steady state operation.
Data Book
2000-07-01
Silicon Temperature Sensors
Figure Drift Resistance with Long-term High Temperature Steady State Operation Spread Resistance Value Corresponding Temperature Error (Iop Table
Data Book
Resistance Band 2000 1000 1002.2 1070.5 501.1 535.2 1053.0 1121.0 526.5 560.5 1105.9 1173.3 553.0 586.7 1160.9 1227.5 580.4 613.7 1217.9 1283.5 608.9 641.7 1276.9 1341.3 638.4 670.7 1338.0 1401.0 669.0 700.5 1401.1 1462.4 700.6 731.2 1466.3 1525.7 733.1 762.9 1533.5 1590.9 766.8 795.4 1602.8 1657.8 801.4 828.9 1674.2 1726.6 837.1 863.3 1747.5 1797.2 873.8 898.6
Temperature Deviation 3.43 3.29 3.15 3.00 2.86 2.71 2.57 2.43 2.28 2.14 1.99 1.85 1.71
2000-07-01
Silicon Temperature Sensors
Table (cont'd)
Resistance Band 2000 1000 1823.0 1869.6 911.5 934.8 1900.5 1943.9 950.2 972.0 1980.0 2020.0 990.0 1010.0 2057.0 2102.6 1028.5 1051.3 2135.8 2187.3 1067.9 1093.6 2216.4 2274.0 1108.2 1137.0 2298.8 2362.7 1149.4 1181.4 2383.1 2453.5 1191.5 1226.8 2469.2 2546.4 1234.6 1273.2 2557.1 2641.3 1278.6 1320.6 2646.9 2738.2 1323.4 1369.1 2738.5 2837.2 1369.2 1418.6 2831.9 2938.3 1415.9 1469.1 2927.1 3041.4 1463.6 1520.7 3024.2 3146.5 1512.1 1573.3 3123.1 3253.7 1561.5 1626.9 3223.8 3363.0 1611.9 1681.5 3326.3 3474.3 1663.2 1737.2 3430.7 3587.7 1715.3 1793.8 3536.9 3703.1 1768.4 1851.5 3644.9 3820.5 1822.5 1910.3 3754.8 3940.0 1877.4 1970.0 3866.4 4061.6 1933.2 2030.8 3979.9 4185.2 1990.0 2092.6 4043.5 4256.3 2021.7 2128.2 4145.0 4367.5 2072.5 2183.8 4246.6 4478.9 2123.3 2239.4 4348.1 4590.2 2174.0 2295.1
Temperature Deviation 1.56 1.42 1.27 1.41 1.56 1.71 1.85 1.99 2.14 2.28 2.43 2.57 2.71 2.86 3.00 3.15 3.29 3.43 3.58 3.72 3.87 4.01 4.15 4.30 4.44 4.59 4.73 4.87
Data Book
2000-07-01

Silicon Temperature Sensors Introduction temperature sensor devel

Top Searches for this datasheet

Other recent searches