General section Small-signal Field-effect Transistors Product spe

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General section Small-signal Field-effect Transistors
Product specification File under Discrete Semiconductors, SC07 1997
Philips Semiconductors
Product specification
Small-signal Field-effect Transistors
QUALITY Total Quality Management Philips Semiconductors Quality Company, renowned high quality products service. keep alive this tradition constantly aiming towards ultimate standard, that zero defects. This guided Total Quality Management (TQM) system, basis which described following paragraphs. QUALITY ASSURANCE Based 9000 standards, customer standards such Ford MDQ. factories certified 9000 external inspectorates. PARTNERSHIPS WITH CUSTOMERS co-operations, design-in agreements, ship-to-stock, just-in-time self-qualification programmes, application support. PARTNERSHIPS WITH SUPPLIERS Ship-to-stock, statistical process control 9000 audits. QUALITY IMPROVEMENT PROGRAMME Continuous process system improvement, design improvement, complete statistical process control, realization final objective zero defects, logistics improvement ship-to-stock just-in-time agreements. Advanced quality planning During design development products processes, quality built-in advanced quality planning. Through failure-mode-and-effect analysis critical parameters detected measures taken ensure good performance these parameters. capability process steps also planned this phase. Product conformance assurance product conformance integral part quality assurance (QA) practice. This achieved Incoming material management through partnerships with suppliers. In-line quality assurance monitor process reproducibility during manufacture initiate necessary corrective action. Critical process steps 100% under statistical process control.
General section
Acceptance tests finished products verify conformance with device specification. test results used quality feedback corrective actions. inspection test requirements detailed general quality specifications. Periodic inspections monitor measure conformance products. Product reliability With increasing complexity Original Equipment Manufacturer (OEM) equipment, component reliability must extremely high. research laboratories development departments study failure mechanisms semiconductors. Their studies result design rules process optimization highest built-in product reliability. Highly accelerated tests applied products reliability evaluation. Rejects from reliability tests from customer complaints submitted failure analysis, result corrective action. Customer responses quality improvement depends joint action with customer. need customer's inputs invite constructive comments aspects performance. Please contact local sales representative. Recognition high quality products services demonstrated many Quality Awards granted major customers international organizations. ELECTRON TYPE NUMBERING SYSTEM Basic type number This type designation code applies discrete semiconductor devices (not integrated circuits), multiples such devices, semiconductor chips Darlington transistors. FIRST LETTER first letter gives information about material active part device. germanium other material with band silicon other material with band gallium arsenide (GaAs) other material with band more compound materials, e.g. cadmium sulphide
1997
Philips Semiconductors
Product specification
Small-signal Field-effect Transistors
SECOND LETTER second letter indicates function which device primarily designed. same letter used multi-chip devices with similar elements. following list power types defined j-mb power types j-mb K/W. diode; signal, power diode; variable capacitance transistor; power, audio frequency transistor; power, audio frequency diode; tunnel transistor; power, high frequency multiple dissimilar devices/miscellaneous devices; e.g. oscillators. Also with special third letter; under Section "Serial number". diode; magnetic sensitive transistor; power, high frequency photocoupler radiation detector; e.g. high sensitivity photo-transistor; with special third letter Definitions terms used ELECTRONIC DEVICE Version letter
General section
letter added basic type number indicate minor electrical mechanical variants basic type. RATING SYSTEMS rating systems described those recommended publication number 134.
electronic tube valve, transistor other semiconductor device. This definition excludes inductors, capacitors, resistors similar components. CHARACTERISTIC characteristic inherent measurable property device. Such property electrical, mechanical, thermal, hydraulic, electro-magnetic nuclear, expressed value stated recognized conditions. characteristic also related values, usually shown graphical form. BOGEY ELECTRONIC DEVICE electronic device whose characteristics have published nominal values type. bogey electronic device particular application obtained considering only those characteristics that directly related application. RATING value that establishes either limiting capability limiting condition electronic device. determined specified values environment operation, stated suitable terms. Limiting conditions either maxima minima. RATING SYSTEM principles upon which ratings established which determine their interpretation. rating system indicates division responsibility between device manufacturer circuit designer, with object ensuring that working conditions exceed ratings. Absolute maximum rating system
radiation generator; e.g. LED, laser; with special third letter control switching device; e.g. thyristor, power; with special third letter transistor; power, switching control switching device; e.g. thyristor, power; with special third letter transistor; power, switching diode; multiplier, e.g. varactor, step recovery diode; rectifying, booster diode; voltage reference regulator, transient suppressor diode; with special third letter.
surface acoustic wave device
SERIAL NUMBER number comprises three figures running from devices primarily intended consumer equipment, letter etc.) figures running from devices primarily intended industrial professional equipment.(1)
When supply these serial numbers exhausted, serial number expanded three figures industrial types four figures consumer types.
Absolute maximum ratings limiting values operating environmental conditions applicable electronic
1997
Philips Semiconductors
Product specification
Small-signal Field-effect Transistors
device specified type, defined published data, which should exceeded under worst probable conditions. These values chosen device manufacturer provide acceptable serviceability device, taking responsibility equipment variations, environmental variations, effects changes operating conditions variations characteristics device under consideration other electronic devices equipment. equipment manufacturer should design that, initially throughout life device, absolute maximum value intended service exceeded with device, under worst probable operating conditions with respect supply voltage variation, equipment component variation, equipment control adjustment, load variations, signal variation, environmental conditions, variations characteristics device under consideration other electronic devices equipment. Design maximum rating system Design maximum ratings limiting values operating environmental conditions applicable bogey electronic device specified type defined published data, should exceeded under worst probable conditions. These values chosen device manufacturer provide acceptable serviceability device, taking responsibility effects changes operating conditions variations characteristics electronic device under consideration. equipment manufacturer should design that, initially throughout life device, design maximum value intended service exceeded with bogey electronic device, under worst probable operating conditions with respect supply voltage variation, equipment component variation, variation characteristics other devices equipment, equipment control adjustment, load variation, signal variation environmental conditions. Design centre rating system Design centre ratings limiting values operating environmental conditions applicable bogey electronic device specified type defined published data, should exceeded under normal conditions. These values chosen device manufacturer provide acceptable serviceability device average 1997
General section
applications, taking responsibility normal changes operating conditions rated supply voltage variation, equipment component variation, equipment control adjustment, load variation, signal variation, environmental conditions, variations characteristics electronic devices. equipment manufacturer should design that, initially, design centre value intended service exceeded with bogey electronic device equipment operating stated normal supply voltage. LETTER SYMBOLS letter symbols transistors detailed this section based publication number 148. Basic letters representation currents, voltages powers, lower-case letter symbols used indicate instantaneous values that vary with time. other values represented upper-case letters. Electrical parameters(1) external circuits circuits which device forms only part represented upper-case letters. Lower-case letters used representation electrical parameters inherent device. Inductances capacitances always represented upper-case letters. following list basic letter symbols used with semiconductor devices: susceptance (imaginary part admittance) capacitance conductance (real part admittance) hybrid parameter current inductance resistance (real part impedance)
power voltage reactance (imaginary part impedance) admittance impedance
purpose this publication, term `electrical parameters' applies four-pole matrix parameters, elements electrical equivalent circuits, electrical impedances admittances, inductances capacitances.
Philips Semiconductors
Product specification
Small-signal Field-effect Transistors
Subscripts Upper-case subscripts used indication continuous (DC) values (without signal), e.g. instantaneous total values, e.g. average total values, e.g. ID(AV) peak total values, e.g. root-mean-square total values, e.g. ID(RMS). Lower-case subscripts used indication values applying varying component alone: instantaneous values, e.g. root-mean-square values, e.g. Id(rms) peak values, e.g. average values, e.g. Id(av). following list subscripts used with basic letter symbols semiconductor devices: (AV), (av) (BO) (BR) case j-mb (min) (max) anode ambient average value base breakover breakdown case collector controllable drain emitter fall, forward forward transfer) gate holding heatsink input junction ambient junction mounting base cathode load peak value minimum maximum mounting base third subscript: terminal mentioned open-circuit Applications examples TRANSISTOR CURRENTS (OV) overload pulse turn-off
General section
first subscript: reverse reverse transfer), rise. second subscript: repetitive, recovery. third subscript: with specified resistance between terminal mentioned reference terminal first subscript: series, source, storage, stray, switching. second subscript: surge (non-repetitive). third subscript: short circuit between terminal mentioned reference terminal storage thermal threshold total working specified circuit reference regulator (zener) input (four-pole matrix) output (four-pole matrix).
(RMS), (rms) root-mean-square value
first subscript indicates terminal carrying current (conventional current flow from external circuit into terminal positive). Examples: Idm. TRANSISTOR VOLTAGES voltage indicated first subscripts: first identifies terminal which voltage measured second reference terminal circuit node. second subscript omitted when there possibility confusion. Examples: VGS, vGS, vgs, Vgsm. SUPPLY VOLTAGES CURRENTS Supply voltages supply currents indicated repeating appropriate terminal subscript. Examples: VDD, ISS.
1997
Philips Semiconductors
Product specification
Small-signal Field-effect Transistors
reference terminal indicated third subscript. Example: VDDS. DEVICES WITH MORE THAN TERMINAL SAME KIND device more than terminal same kind, subscript formed appropriate letter terminal, followed number. Hyphens used avoid confusion multiple subscripts. Examples: VG2-S continuous (DC) current flowing into second gate terminal continuous (DC) voltage between terminals second gate source.
General section
lower-case variant subscript used designation small-signal values. Examples: small-signal value short-circuit forward transconductance common-source configuration small-signal value input impedance.
more than subscript used, subscripts which choice style allowed, subscripts chosen upper-case lower-case. Examples: hFE, yRE, hfe, gFS. FOUR-POLE MATRIX PARAMETERS first letter subscript double numeric subscript) indicates input, output, forward transfer reverse transfer. Examples: h11), h22), h21), h12). further subscript used identification circuit configuration. When confusion possible, this further subscript omitted. Examples: h21e), h21E). DISTINCTION BETWEEN REAL IMAGINARY PARTS necessary distinguish between real imaginary parts electrical parameters, additional subscripts used. basic symbols real imaginary parts exist, these used. Examples: jXi, jbfe. such symbols exist suitable, notation shown following examples used. Examples: (hib) etc. real part hib. (hib) etc. imaginary part hib.
MULTIPLE DEVICES multiple unit devices, subscripts modified number preceding letter subscript. Hyphens used avoid confusion multiple subscripts. Examples: V1D-2D continuous (DC) current flowing into drain terminal second unit continuous (DC) voltage between drain terminals first second units.
ELECTRICAL PARAMETERS upper-case variant subscript used designation static (DC) values. Examples: static value forward transconductance common-source configuration current gain) value drain-source resistance.
static value slope line from origin operating point appropriate characteristic curve, i.e. quotient appropriate electrical quantities operating point.
1997
Philips Semiconductors
Product specification
Small-signal Field-effect Transistors
S-PARAMETER DEFINITIONS S-parameter symbols this section based publication 747-7. S-parameters (return losses reflection coefficients) module defined two-port network (see Fig.1). Measurement
General section
return losses measured with network analyzer after calibration, where influence test eliminated. necessary termination other port with done automatically network analyzer. network analyser must have directivity least obtain accuracy when measuring return loss figures full two-port correction method used improve accuracy. TAPE REEL PACKING Tape reel packing meets feed requirements automatic pick place equipment (packing conforms publication 286-2 286-3). Additionally, tape ideal shipping container. Packing (TO-92 leaded types) transistors supplied tape boxes (ammopack) reels. number reel ammopack 2000. ammopack layers transistors each. Each layer contains transistors, plus empty position order fold layer correctly. ammopack accessible from both sides, enabling user choose between `normal' (see Fig.3) `reverse' tape. `Normal' indicated plus sign ammopack `reverse' minus sign (-). European version, leading source.
D.U.T.
MLB335
Fig.1
Two-port network with reflection coefficients S22.
where: signal into port signal into port signal port signal port From formulae return losses derived: (5), means output port terminated with (derived from formula (4)). (6), means input port terminated with (derived from formula (3)).
1997
Philips Semiconductors
Product specification
Small-signal Field-effect Transistors
General section
handbook, full pagewidth
MEA940
Fig.2 TO-92 transistors tape.
1997
Philips Semiconductors
Product specification
Small-signal Field-effect Transistors
Table Tape specification (TO-92 leaded types) SPECIFICATIONS SYMBOL Note Measured over devices. Dropouts maximum 0.5% specified number transistors each packing missing. consecutive components missing provided followed consecutive components. Tape splicing DIMENSION MIN. body width body height body thickness pitch component feed hole pitch cumulative pitch error NOM. 12.7 12.7 6.35 5.08 16.5 MAX. 23.25 ±0.3 ±0.1 ±0.4 +0.6/-0.2 ±0.5 ±0.2 +0.7/-0.5 ±0.2 ±0.5 ±0.2 +0.4/-0.2 TOL. UNIT
General section
REMARKS
note measured bottom clinch body
feed hole centre component centre distance between outer leads component alignment tape width hold-down tape width hole position hold-down tape position lead wire clinch height component height length snipped leads feed hole diameter total tape thickness lead-to-lead distance clinch height pull-out force
Splice carrier tape back and/or front that feed hole pitch (P0) maintained (see Figs
1997
Philips Semiconductors
Product specification
Small-signal Field-effect Transistors
General section
handbook, full pagewidth
packing label
MEA473
direction unreeling
Dimensions
Fig.3 Dimensions reel box.
1997
Philips Semiconductors
Product specification
Small-signal Field-effect Transistors
General section
dbook, full pagewidth
MEA941
Fig.4 Joining tape with splicing patch.
ndbook, full pagewidth
0.40
2.54 0.66 0.56 12.7 0.48 0.40
MBC014
Dimensions Terminal dimensions within this zone uncontrolled allow flow plastic terminal irregularities.
Fig.5 TO-92 with straight leads.
1997
Philips Semiconductors
Product specification
Small-signal Field-effect Transistors
General section
full pagewidth
0.40
2.54
12.7 0.48 0.40
0.66 0.56
MBC015
Dimensions Terminal dimensions within this zone uncontrolled allow flow plastic terminal irregularities.
Fig.6 TO-92 with delta pinning.
Packing types Table Packing quantities reel (SMD types) REEL 3000 3000 3000 3000 3000 REEL 10000 10000 10000 10000 10000
PACKAGE SOT23 SOT143 SOT143R SOT343 SOT343R
1997
Philips Semiconductors
Product specification
Small-signal Field-effect Transistors
General section
andbook, full pagewidth
SOT23 SOT143R/343R SOT143/343
P0(1) direction unreeling
MBE547
dimensions Table Tolerance over pitches: ±0.2
Fig.7 Specification tape (SOT23, SOT143, SOT143R, SOT343 SOT343R).
Table
Carrier tape widths packages CARRIER TAPE
SOT23 SOT143(R) SOT343(R)
1997
Philips Semiconductors
Product specification
Small-signal Field-effect Transistors
Table packages: tape dimensions DIMENSION (Figs Overall dimensions Sprocket holes; note Compartment Cover tape; note Carrier tape Notes Tolerance over pitches ±0.2 cover tape shall overlap tape sprocket holes. <0.2 <0.3 12.0 <0.2 <0.3 <5.4 <0.1 <9.5 <0.1 >1.0 <15° >1.5 <15° 1.75 1.75 <1.5 >0.75 12.0 <2.4 >0.75 CARRIER TAPE
General section
TOLERANCE ±0.2
+0.1/-0 ±0.1 ±0.1 ±0.1 ±0.05
Relative placement compartment
Compartment dimensions depend package size. Maximum clearance between device compartment minimum clearance ensures that device totally restrained within compartment.
±0.1
±0.2
1997
Philips Semiconductors
Product specification
Small-signal Field-effect Transistors
General section
handbook, full pagewidth
trailer
leader fixing tape
MEA942
dimensions Table
Fig.8 Reel specification.
Table
Reel dimensions TAPE TAPE ±0.5 +0.5/-0.1 18.0+0.2 ±1.5 +0.15/-0.2 ±0.2 ±0.5 TOLERANCE
DIMENSION (see Fig.8) Flange slot Note 120° 12.75
12.4
12.75
120°
Large reel diameter depends individual package (286 350). 1997
Philips Semiconductors
Product specification
Small-signal Field-effect Transistors
MOUNTING SOLDERING Mounting methods There basic forms electronic component construction, those with leads through-hole mounting microminiature types surface mounting (SMD). Through-hole mounting gives very rugged construction uses well established soldering methods. Surface mounting advantages high packing density plus high-speed automated assembly. Surface mounting techniques complex this chapter gives only simplified overview subject. Although many electronic components available surface mounting types, some this often leads through-hole well surface mounting components substrate mixed print). components affects soldering methods that applied. substrate having SMDs mounted both sides through-hole components likely suitable reflow wave soldering. double sided mixed print that through-hole components some SMDs side densely packed SMDs other normally undergoes sequential combination reflow wave soldering. When mixed print only through-hole components side SMDs other, wave soldering usually applied. Reflow soldering SOLDER PASTE Most reflow soldering techniques utilize paste that mixture flux solder. solder paste applied substrate before components placed. sufficient viscosity hold components place and, therefore, application adhesive required. Drying solder paste preheating increases viscosity prevents tendency components become displaced during soldering process. Preheating also minimizes thermal shock drives flux solvents.
General section
Screen printing
This best high-volume production method solder paste application. emulsion-coated, fine mesh screen with apertures etched emulsion coincide with surfaces soldered placed over substrate. squeegee passed across screen force solder paste through apertures substrate. layer thickness screened solder paste usually between
Stencilling
this method stencil with etched holes pass paste used. thickness stencil determines amount amount solder paste that deposited substrate. This method also suited high-volume work.
Dispensing
computer-controlled pressure syringe dispenses small doses paste where required. This method mainly suitable small production runs laboratory use.
transfer
picks droplet solder paste from reservoir transfers surface substrate component. multi-pin arrangement with pins positioned match substrate possible this speeds process time. REFLOW TECHNIQUES
Thermal conduction
prepared substrates carried conveyor belt, first through preheating stage then through soldering stage. Heat transferred substrate conduction through belt. Figure shows theoretical time/temperature relationship thermal conduction reflow soldering. This method particularly suited thick film substrates often combined with infrared heating.
1997
Philips Semiconductors
Product specification
Small-signal Field-effect Transistors
Infrared
infrared oven several heating elements giving broad spectrum infrared radiation, normally above below closed loop belt system. There separate zones preheating, soldering cooling. Dwell time soldering zone kept short possible prevent damage components substrate. typical heating profile shown Fig.10. This reflow method often applied double-sided prints.
General section
MBC938
Vapour phase
substrate immersed vapours suitable boiling liquid. vapours transfer latent heat condensation substrate solder reflow takes place. Temperature controlled precisely boiling point liquid given pressure. Some systems employ vapour zones, above other. elevator tray, suspended from hoist mechanism passes substrate vertically through first vapour zone into secondary soldering zone then hoists vapour cooled. theoretical time/temperature relationship this method shown Fig.11. Fig.9
Theoretical time temperature curve typical thermal conductive reflow cycle.
MBC939 MBC937
free cooling preheating max. soldering cooling removal phase time soldering zone
entering phase soldering zone time soldering zone
Fig.10 Typical temperature profile infrared oven operating belt speed 0.41 min.
Fig.11 Theoretical time temperature curve relationship dual vapour reflow soldering.
1997
Philips Semiconductors
Product specification
Small-signal Field-effect Transistors
Wave soldering This soldering technique recommended SOT89. ADHESIVE APPLICATION Since there connecting wires retain them, leadless short-leaded components held place with adhesive wave soldering. spot adhesive carefully placed between each substrate. adhesive then heat-cured withstand forces soldering process, during which components fully immersed solder. There several methods adhesive application.
General section
suited volume production. advantage flexibility provided computer programmability. FLUXING quality soldered connections between components substrate critical circuit performance reliability. Flux promotes solderability connecting surfaces chosen following attributes: removal surface oxides prevention reoxidation transference heat from source joint area residue that non-corrosive residue corrosive, should easy clean away after soldering ability improve wettability (readiness metal surface form alloy interface with solder) ensure strong joints with electrical resistance suitability desired method flux application. wave soldering, liquified flux usually applied foam, spray wave.
transfer method
used transfer droplet adhesive from reservoir precise position surface where required. size droplet depends diameter, depth which dipped reservoir, rheology adhesive, temperature adhesive surrounds. part array (bed nails) that corresponds exactly with required adhesive positions substrate. With this method, adhesive applied whole side substrate operation therefore suitable high-volume production used with pre-loaded mixed prints. Alternatively, pins used transfer adhesive components before they placed substrate. This adds flexibility production runs where variations layout must accommodated.
Foam
Flux foam made forcing low-pressure, water-free clean through aerator immersed liquid flux. Fine bubbles flux directed onto substrate/component surfaces where they burst form thin, even layer. flux also penetrates plated-through holes. flux chosen foaming capabilities.
Screen printing method
fine mesh screen coated with emulsion except positions where adhesive required pass. screen placed substrate squeegee passing across forces adhesive through uncoated parts screen. amount adhesive printed-through depends size uncoated screen areas, thickness screen coating, rheology adhesive various machine parameters. With this method, substrate must flat pre-loaded mixed prints cannot accommodated.
Spray
Several methods spray fluxing exist, most common involves mesh drum rotating liquid flux. blown into drum which, when passing through fine mesh, directs spray flux onto underside substrate. amount flux deposited controllable speed substrate passing through spray, speed rotation drum density flux.
Wave
wave fluxer creates double flowing wave liquid flux which adheres surface substrate passes through. Wave height control essential soft wipe-off brush usually incorporated remove excess flux from substrate.
Pressure syringe method
computer-controlled syringe dispenses adhesive from enclosed reservoir means pulses compressed air. adhesive size depends size syringe nozzle, duration pressure pulsed viscosity adhesive. This method most
1997
Philips Semiconductors
Product specification
Small-signal Field-effect Transistors
PRE-HEATING Pre-heating substrate components performed immediately before soldering. This reduces thermal shock substrate enters soldering process, causes flux become more viscous accelerates chemical action flux speeds soldering action. SOLDERING Wave soldering usually best method when high throughput rates required. single-wave soldering principle (see Fig.12) most straight forward method used simple substrates with two-terminal components. More complex substrates with increased circuit density closer spacing conductors pose problems nonwetting (dry joints) solder bridging. Bridging occur across closely spaced leads multi-leaded devices well across adjacent leads neighbouring components. Nonwetting usually caused components with plastic bodies. plastic wetted solder creates depression solder wave, which augmented surface tension. This cause shadow behind component prevent solder from reaching joint surfaces. smooth laminar solder wave required
General section
avoid bridging high pressure wave needed completely cover areas that difficult wet. These conflicting demands difficult attain single wave dual wave techniques long overcoming problem. dual wave machine (see Fig.13), substrate first comes into contact with turbulent wave which high vertical velocity. This ensures good solder contact with both edges components prevents joints from being missed. second smooth laminar wave completes formation solder fillet, removes excess solder prevents bridging. Figure indicates time/temperature relationship measured soldering site dual wave soldering. methods wave soldering developing continually. example, Omega System single wave agitated pulses, which combines functions smoothness turbulence. another, lambda wave injects bubbles final part wave. further innovation hollow wave which solder wave flows opposite direction substrate.
board travel
handbook, halfpage
board travel
SMDs
MBC935
MBC934
solder solder
Fig.12 Single wave soldering principle.
Fig.13 Dual wave soldering principle.
1997
Philips Semiconductors
Product specification
Small-signal Field-effect Transistors
Footprint design
General section
footprint design component surface mounting influenced many factors:
handbook, halfpage
MBC936
features component, dimensions tolerances circuit board manufacturing processes desired component density minimum spacing between components circuit tracks under component component orientation wave soldering) positional accuracy solder resist solder lands positional accuracy solder paste solder lands reflow soldering) component placement accuracy soldering process parameters solder joint reliability parameters.
time
Fig.14 Typical time-temperature curve measured soldering site.
1997
Philips Semiconductors
Product specification
Small-signal Field-effect Transistors
SOT23 FOOTPRINTS
General section
handbook, full pagewidth
0.85 3.00 0.85 1.30
0.50 (3x) 0.60 (3x) 1.00 3.30
2.90 2.50
solder lands solder resist 2.70 occupied area solder paste
0.60 (3x)
MSA439
Dimensions Placement accuracy: ±0.25
Fig.15 Reflow soldering footprint SOT23; typical dimensions.
handbook, full pagewidth
4.60 4.00 1.20
,,,,,, ,,,,,, ,,,,,, ,,,, ,,,, ,,,,
1.20 (2x) 2.80 4.50
3.40
solder lands solder resist occupied area
preferred transport direction during soldering
MSA427
Dimensions Placement accuracy: ±0.25
Fig.16 Wave soldering footprint SOT23; typical dimensions.
1997
Philips Semiconductors
Product specification
Small-signal Field-effect Transistors
SOT143/SOT143R FOOTPRINTS
General section
handbook, full pagewidth
0.60 (4x)
2.70
,,,, ,,,, ,,,, ,,,,
0.90 1.00 2.50
3.25 0.60 (3x) 0.50 (3x)
solder lands solder resist occupied area solder paste
1.30 3.00
MSA441
Dimensions Placement accuracy: ±0.25
Fig.17 Reflow soldering footprint SOT143; typical dimensions.
handbook, full pagewidth
4.45
3.40
1.20 (3x) 1.00
solder lands solder resist occupied area
1.15 4.00 4.60
preferred transport direction during soldering
MSA422
Dimensions Placement accuracy: ±0.25
Fig.18 Wave soldering footprint SOT143; typical dimensions.
1997
Philips Semiconductors
Product specification
Small-signal Field-effect Transistors
SOT343 FOOTPRINTS
General section
handbook, full pagewidth
2.50
0.55 (4x)
,,,, ,,,, ,,,,
0.50 (3x) 0.70 0.80 1.90
0.60 (3x)
solder lands solder resist occupied area solder paste
1.30 2.40 2.70
MSA430
Dimensions Placement accuracy: ±0.25
Fig.19 Reflow soldering footprint SOT343; typical dimensions.
handbook, full pagewidth
,,,, ,,,, ,,,, ,,,, ,,,, ,,,,
1.00 2.70
3.65 0.90 (3x)
solder lands 2.30 solder resist occupied area 1.15 4.00
3.00
transport direction during soldering
MSA421
Dimensions Placement accuracy: ±0.25
Fig.20 Wave soldering footprint SOT343; typical dimensions.
1997
Philips Semiconductors
Product specification
Small-signal Field-effect Transistors
Hand soldering microminiature components possible solder microminiature components with light-weight hand-held soldering iron, this method obvious drawbacks should restricted laboratory and/or incidental repairs production circuits: hand-soldering time-consuming therefore expensive. component cannot positioned accurately connecting tags come into contact with substrate damage there risk breaking substrate internal connections component could damaged. component package could damaged iron. THERMAL CONSIDERATIONS Thermal resistance Circuit performance long-term reliability affected temperature transistor die. Normally, both improved keeping temperature (junction temperature) low. Electrical power dissipated semiconductor device source heat. This increases temperature about some reference point, normally ambient temperature still air. size increase temperature depends amount power dissipated circuit thermal resistance between heat source reference point. Devices lose most their heat conduction when mounted printed board, substrate heatsink. Referring Fig.21 (for surface mounted devices mounted substrate), heat conducts from source (the junction) package leads soldered connections substrate. Some heat radiates from package into surrounding where dispersed convection forced cooling air. Heat that radiates from substrate dispersed same way.
General section
elements thermal resistance shown Fig.22 defined follows: j-mb thermal resistance from junction mounting base thermal resistance from junction case thermal resistance from junction soldering point thermal resistance from soldering point ambient thermal resistance from case ambient (Rth same most packages) thermal resistance from junction ambient.
temperature junction depends ability package mounting transfer heat from junction region ambient environment. basic relationship between junction temperature power dissipation where: Tamb Ptot maximum junction temperature ambient temperature maximum power handling capability device, including effects external loads when applicable. Tamb Ptot (Rth s-a) Tamb Ptot (Rth j-a)
expression max, only Tamb varied user. package mounting technique flow cooling factors that affect s-a. device power dissipation controlled limited extent under recommended usage, supply voltage circuit loading dictate fixed power maximum. value essentially independent external mounting method cooling air; sensitive materials used package construction, bonding method area, which fixed.
1997
Philips Semiconductors
Product specification
Small-signal Field-effect Transistors
Values j-s, given device data sheets. applications where temperature case stabilized large temperature-controlled heatsink, junction temperature calculated from Tcase Ptot using soldering point definition, from Tsolder Ptot j-s. Thermal resistance (Rth c-a) thermal resistance from soldering point ambient (SMDs), that from case ambient depends mounting technique, shape material tracks substrate. Standard mounting conditions maximum power ratings various packages shown Figs 37?. Each figure shows single-sided copper-clad epoxy fibre-glass print, thick, tracks fully solder-tinned shaded areas shown copper ceramic (Al2O3) thick. SMDs mounted ceramic substrate thermal resistance devices SOT23, packages mounted ceramic substrate function substrate area shown Fig.28.
General section
thermal resistance then calculated (substrate) (PCB) (PCB) (substrate) (PCB) SOT23 SOT143 SOT89 SOT223
handbook, halfpage
MBB438
function area shown Fig.27.
handbook, halfpage
junction soldering point case ambient
MBB439 MBB444
j-mb
Fig.22 Representation thermal resistance paths device mounted substrate printed board.
1997
Heat radiates from package ambient. Heat conducts leads `2', solder joints substrate `4'.
Fig.21 Heat losses.
handbook, halfpage
Dimensions
Fig.23 Standard mounting conditions SOT23.
Philips Semiconductors
Product specification
Small-signal Field-effect Transistors
General section
handbook, halfpage
MBB443
Dimensions
Fig.24 Standard mounting conditions SOT143.
handbook, full pagewidth
2.54 2.54
MBE241
Dimensions
Fig.25 Standard mounting conditions SOT54, higher dissipation option.
1997
Philips Semiconductors
Product specification
Small-signal Field-effect Transistors
General section
handbook, full pagewidth
2.54 2.54
Dimensions
MBE242
Fig.26 Standard mounting conditions SOT54.
handbook, halfpage
MGC124
handbook, halfpage (K/W)
MBB447
(K/W)
10-1
area
Fig.27 Thermal resistance (Rth j-a) function epoxy fibre-glass circuit board.
Fig.28 Thermal resistance (Rth s-a) function area ceramic substrate.
1997
Philips Semiconductors
Product specification
Small-signal Field-effect Transistors
ELECTROSTATIC CHARGES Electrostatic charges exist many things; example, man-made-fibre clothing, moving machinery, objects with blowing across them, plastic storage bins, sheets paper stored plastic envelopes, paper from electrostatic copying machines, people. charges caused friction between surfaces, least which non-conductive. magnitude polarity charges depend different affinities electrons materials rubbing together, friction force humidity surrounding air. Electrostatic discharge transfer electrostatic charge between bodies different potentials occurs with direct contact when induced electrostatic field. devices damaged following precautions taken. WORK STATION Figure shows working area suitable safely handling electrostatic sensitive devices. work bench, surface which conductive covered antistatic sheet. Typical resistivity bench surface between cm2. floor should also covered with antistatic material. following precautions should observed: Persons work bench should earthed wrist strap resistor. mains-powered electrical equipment should connected earth leakage switch. Equipment cases should earthed. Relative humidity should maintained between 65%. ionizer should used neutralize objects with immobile static charges. RECEIPT STORAGE
General section
devices packed dispatch antistatic/conductive containers, usually boxes, tubes blister tape. fact that contents sensitive electrostatic discharge shown warning labels both primary secondary packing. devices should kept their original packing whilst storage. bulk container partially unpacked, unpacking should performed protected work station. devices that stored temporarily should packed conductive antistatic packing carriers. ASSEMBLY devices must removed from their protective packing with earthed component pincers short-circuit clips. Short-circuit clips must remain place during mounting, soldering cleansing/drying processes. remove more devices from storage packing than needed time. Production/assembly documents should state that product contains electrostatic sensitive devices that special precautions need taken. tools used during assembly, including soldering tools solder baths, must earthed. hand tools should conductive antistatic material and, where possible, should insulated. Measuring testing completed circuit boards must done protected work station. Place soldered side circuit board conductive antistatic foam remove short-circuit clips. Remove circuit board from foam, holding board only edges. Make sure circuit board does touch conductive surface work bench. After testing, replace circuit board conductive foam await packing. Assembled circuit boards should handled same unmounted devices. They should also carry warning labels packed conductive antistatic packing.
1997
Philips Semiconductors
Product specification
Small-signal Field-effect Transistors
General section
handbook, full pagewidth
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MLB049
Earthing rail. Resistor (500 10%, Ionizer. Work bench. Chair. Wrist strap. Electrical equipment. Conductive surface/antistatic sheet. Antistatic floor.
Fig.29 Protected work station.
1997

General section Small-signal Field-effect Transistors Product spe

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