N-Channel Silicon MOSFET 2SK2316 Features resistance. U

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N-Channel Silicon MOSFET 2SK2316 Features resistance. U

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Ordering number EN5300A
N-Channel Silicon MOSFET
2SK2316
Features
resistance. Ultrahigh-speed switching. Low-voltage drive (2.5V drive).
Package Dimensions
unit: 2062A-PCP
[2SK2316]
Specifications Absolute Maximum Ratings Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Symbol VDSS VGSS Conditions Ratings +150
Gate Drain Source SANYO: (Bottom View)
PW10µd, duty cycle1% Mounted ceramic board Tc=25°C
Unit
Channel Temperature Storage Temperature
Tstg
Electrical Characteristics Ta=25°C
Parameter Breakdown Voltage Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) RDS(on) RDS(on) Ciss Coss Crss Conditions ID=1mA, VGS=0 IG=±100µA, VDS=0 VDS=16V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=4V ID=1A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz Ratings Unit
Continued next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, JAPAN 11697YK (KOTO) TA-0121 No.5300-1/4
2SK2316
Continued from preceding page.
Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Making Symbol td(on) td(off) Conditions specified Test Circuit. IS=2A, VGS=0 Ratings Unit
Switching Time Test Circuit
No.5300-2/4
2SK2316
No.5300-3/4
2SK2316
products described contained herein intended surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment like, failure which directly indirectly cause injury, death property lose. Anyone purchasing products described contained herein above-mentioned shall: Accept full responsibility indemnify defend SANYO ELECTRIC CO., LTD., affiliates, subsidiaries distributors their officers employees, jointly severally, against claims litigation damages, cost expenses associated with such use: impose responsibilty fault negligence which cited such claim litigation SANYO ELECTRIC CO., LTD., affiliates, subsidiaries distributors their officers employees jointly severally. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties. This catalog provides information January, 1997. Specifications information herein subject change without notice.
No.5300-4/4

N-Channel Silicon MOSFET 2SK2316 Features resistance. U

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