Bridges S1NBB80 800V OUTLINE DIMENSIONS Case Unit
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General Purpose Rectifiers
Bridges
S1NBB80
800V
OUTLINE DIMENSIONS
Case Unit
RATINGS
Absolute Maximum Ratings specified Ta=25) Item Symbol Conditions Tstg Storage Temperature Operating Junction Temperature Maximum Reverse Voltage Average Rectified Forward Current 50Hz sine wave, R-load, Glass-epoxy substrate, Ta=26 50Hz sine wave, R-load, Glass-epoxy substrate, Ta=25 IFSM 50Hz sine wave, Non-repetitive cycle peak value, Tj=25 Peak Surge Forward Current Current Squared Time 1mst10ms@Tj=25 Electrical Characteristics specified Ta=25) Item Symbol Conditions Forward Voltage IF=0.5A, Pulse measurement, Rating diode Reverse Current VR=VRM, Pulse measurement, Rating diode junction lead junction ambient Thermal Resistance junction ambient
Glass epoxy substrate (pattern area 324mm2) Glass epoxy substrate (pattern area 101mm2)
Ratings 0.84 Ratings 1.05
Unit Unit
Copyright Copy;2002 Shindengen Electric Mfg. Co., Ltd.
S1NBB80
Forward Voltage
Pulse measurement diode
Ta=150°C[TYP] 25°C[TYP]
Forward Current
Forward Voltage
S1NBB80
Forward Power Dissipation
Forward Power Dissipation
Average Rectified Forward Current
150°C
S1NBB80
Derating Curve
Average Rectified Forward Current
Glass-epoxy substrate Soldering land Conductor layer
[°C] Ambient Temperature
S1NBB80
Peak Surge Forward Capability
10ms
10ms
cycle
non-repetitive, sine wave, Tj=25°C before surge current applied
Peak Surge Forward Current
Number Cycles [cycle]
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