File Number 2870.1 -2A, -80V -100V, 3.500 Ohm, P-Channel Power MO

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File Number 2870.1 -2A, -80V -100V, 3.500 Ohm, P-Channel Power MO

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RFP2P08, RFP2P10
File Number 2870.1
-2A, -80V -100V, 3.500 Ohm, P-Channel Power MOSFETs
These P-Channel enhancement mode silicon gate
Features
-2A, -80V -100V rDS(ON) 3.500
/Title power field effect transistors designed applications such Related Literature (RFP2P switching regulators, switching converters. motor drivers, TB334 "Guidelines Soldering Surface Mount relay drivers, drivers high power bipolar switching Components Boards RFP2P transistors requiring high speed gate drive power. These types operated directly from integrated Symbol circuits. /SubFormerly developmental type TA_. ject (2A, Ordering Information PART NUMBER PACKAGE BRAND RFP2P08 TO-220AB RFP2P08 100V, RFP2P10 TO-220AB RFP2P10 3.500 NOTE: When ordering, entire part number. Ohm, P-Channel Packaging Power TO-220AB MOSSOURCE FETs) DRAIN GATE /Author DRAIN (FLANGE) /Keywords (Harris Semiconductor, P-Channel Power MOSFETs, TO220AB) /Creator /DOCI pdf-
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. 1-800-4-HARRIS Copyright Harris Corporation 1998
RFP2P08, RFP2P10
RFP2P08 Drain Source Voltage (Note VDSS Drain Gate Voltage (RGS 20k) (Note VDGR Continuous Drain Current Pulsed Drain Current (Note Gate Source Voltage Maximum Power Dissipation Linear Derating Factor Operating Storage Temperature .TJ, TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief Tpkg RFP2P10 -100 -100 UNITS W/oCaaa
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 125oC.
Electrical Specifications
PARAMETER
25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS -250µA, -100 VGS(TH) IDSS VDS, -250µA Rated BVDSS, Rated BVDSS, 125oC -25V, =1MHz (Figure ±100 3.500 -7.0
oC/W
UNITS
Drain Source Breakdown Voltage RFP2P08 RFP2P10 Gate Threshold Voltage Zero-Gate Voltage Drain Current
Gate Source Leakage Current Drain Source Resistance (Note Drain Source Voltage (Note Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction Case
IGSS rDS(ON) VDS(ON) td(ON) td(OFF) CISS COSS CRSS
±20V, -2A, -10V (Figures -2A, -10V -50V, -10V, 46.5 (Figures
Source Drain Diode Specifications
PARAMETER Source Drain Diode Voltage (Note Diode Reverse Recovery Time NOTES: Pulse Test: Pulse width 300µs, duty cycle Repetitive rating: pulse width limited maximum junction temperature. SYMBOL TEST CONDITIONS -2A, dISD/dt 50A/µs -1.4 UNITS
RFP2P08, RFP2P10 Typical Performance Curves
POWER DISSIPATION MULTIPLIER
Unless otherwise Specified
CASE TEMPERATURE (oC) DRAIN CURRENT
CASE TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT CASE TEMPERATURE
RATED 25oC DRAIN CURRENT
DRAIN CURRENT
PULSE DURATION 80µs DUTY CYCLE 25oC -20V
-10V
0.10
OPERATION THIS AREA LIMITED rDS(ON)
0.01 1000 VDS, DRAIN SOURCE VOLTAGE VDS, DRAIN SOURCE VOLTAGE
FIGURE FORWARD BIAS SAFE OPERATING AREA
FIGURE SATURATION CHARACTERISTICS
IDS(ON), DRAIN SOURCE CURRENT
rDS(ON), DRAIN SOURCE RESISTANCE VGS, GATE SOURCE VOLTAGE 125oC -15V PULSE DURATION 80µs DUTY CYCLE -40oC 25oC
125oC 25oC
-10V PULSE DURATION 80µs DUTY CYCLE
-40oC
DRAIN CURRENT
FIGURE TRANSER CHARACTERISTICS
FIGURE DRAIN SOURCE RESISTANCE DRAIN CURRENT
RFP2P08, RFP2P10 Typical Performance Curves
-10V PULSE DURATION 80µs NORMALIZED GATE THRESHOLD VOLTAGE
Unless otherwise Specified (Continued)
NORMALIZED DRAIN SOURCE RESISTANCE
250µA
JUNCTION TEMPERATURE (oC)
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE
VDS, DRAIN SOURCE VOLTAGE BVDSS BVDSS GATE SOURCE VOLTAGE IG(REF) 0.095mA -10V 0.75BVDSS 0.75BVDSS 0.50BVDSS 0.50BVDSS 0.25BVDSS 0.25BVDSS DRAIN SOURCE VOLTAGE VGS, GATE SOURCE VOLTAGE
CAPACITANCE (pF) COSS CRSS CISS
1MHz CISS CRSS COSS
(REF) (ACT) TIME (µs) (REF) (ACT)
VDS, DRAIN SOURCE VOLTAGE
NOTE: Refer Harris Application Notes AN7254 AN7260. FIGURE NORMALIZED SWITCHING WAVEFORMS CONSTANT GATE CURRENT
FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE
Test Circuit Waveforms
td(ON) tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
RFP2P08, RFP2P10 Test Circuit Waveforms
-VDS (ISOLATED SUPPLY) BATTERY 0.2µF 0.3µF IG(REF) CURRENT SAMPLING RESISTOR +VDS CURRENT SAMPLING RESISTOR Qg(TOT)
CURRENT REGULATOR
IG(REF)
FIGURE GATE CHARGE TEST CIRCUIT
FIGURE GATE CHARGE WAVEFORMS

File Number 2870.1 -2A, -80V -100V, 3.500 Ohm, P-Channel Power MO

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