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Data Sheet PD-6.067B IR51HD320 SELF-OSCILLATING HALF-BRIDGE
Top Searches for this datasheetData Sheet PD-6.067B IR51HD320 SELF-OSCILLATING HALF-BRIDGE Features Product Summary (max) Duty Cycle Deadtime RDS(on) 400V 1.2µs 2.0W Output Power MOSFETs half-bridge configuration 400V Rated Breakdown Voltage High side gate drive designed bootstrap operation Bootstrap diode integrated into package Accurate timing control both Power MOSFETs Matched delay duty cycle Matched deadtime 1.2us Internal oscillator with programmable frequency Zener clamped offline operation Half-bridge output phase with Description IR51HD320 high voltage, high speed, selfoscillating half-bridge. Proprietary HVIC latch immune CMOS technologies, along with HEXFET® power MOSFET technology, enable ruggedized single package construction. front-end features programmable oscillator which functions similar CMOS timer. supply control circuit zener clamp simplify offline operation. output features HEXFETs half-bridge configuration with internally deadtime designed minimum cross-conduction half-bridge. Propagation delays high side power MOSFETs matched simplify duty cycle applications. device operate volts. Package IR51HD320 9506 Typical Connection 400V Order IR51HD320 Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage device occur. voltage parameters absolute voltages referenced COM, currents defined positive into lead. Thermal Resistance Power Dissipation ratings measured under board mounted still conditions. Symbol dv/dt Parameter Definition High Voltage Supply High Side Floating Supply Absolute Voltage Half-Bridge Output Voltage Voltage Voltage Supply Current (Note Output Current Peak Diode Recovery dv/dt Package Power Dissipation Thermal Resistance, Junction Ambient Junction Temperature Storage Temperature Lead Temperature (Soldering, seconds) Min. -0.3 -0.3 -0.3 -0.3 -0.3 Max. 2.00 Units V/ns Recommended Operating Conditions Input/Output logic timing diagram shown Figure proper operation device should used within recommended conditions. Symbol Note Parameter Definition High Side Floating Supply Absolute Voltage High Voltage Supply Half-Bridge Output Voltage Continuous Drain Current Supply Current (Note Ambient Temperature Min. Max. VCLAMP Units Because IR51HD320's application specificity toward off-line supply systems, this contains zener clamp structure between chip which nominal breakdown voltage 15.6V. Therefore, supply voltage normally derived current feeding lead (typically means high value resistor connected between chip rectified line voltage local decoupling capacitor from COM) allowing internal zener clamp circuit determine nominal supply voltage. Therefore, this circuit should driven impedance power source greater than VCLAMP. Order IR51HD320 Dynamic Electrical Characteristics VBIAS (VCC, unless otherwise specified. Symbol Parameter Definition Reverse Recovery Time (MOSFET Body Diode) Reverse Recovery Charge (MOSFET Body Diode) Deadtime, Turn-Off Turn-On Turn-Off Turn-On Duty Cycle Min. Typ. Max. Units Test Conditions 900mA di/dt 100A/µs Static Electrical Characteristics VBIAS (VCC, unless otherwise specified. Symbol Parameter Definition Min. Typ. Max. Units -8.4 15.6 Test Conditions Supply Characteristics VCCUV+ Supply Undervoltage Positive Going Threshold VCCUV- Supply Undervoltage Negative Going Threshold IQCC Quiescent Supply Current VCLAMP Zener Shunt Clamp Voltage Floating Supply Characteristics IQBS Quiescent Supply Current Offset Supply Leakage Current-Oscillator Characteristics Oscillator Frequency 400V -kHz -1.0 2.5V 35.7 7.04 VCCUV+ -100 2.5V VCCUV+ VCTUV VRT+ VRT- Input Current Undervoltage Lockout High Level Output Voltage, Level Output Voltage VRTUV Undervoltage Lockout, VCT+ Threshold VCT1/3 Threshold Output Characteristics RDS(on) Static Drain-to-Source On-Resistance Diode Forward Voltage -0.7 0.001 -200 -200 -100 -8.0 -4.0 -1.8 Order IR51HD320 Functional Block Diagram IRFC320 IR2151 IRFC320 Lead Definitions Symbol Lead Description Logic internal gate drive supply voltage. internal zener clamp diode 15.6 nominal included allow current directly from typically means high value resistor. Oscillator timing resistor input; resistor connected from phase with half-bridge output (VO). Oscillator timing capacitor output; capacitor connected from order program oscillator frequency according following equation: where effective impedance output stage. High side gate drive floating supply. bootstrap operation high voltage fast recovery diode needed feed from High voltage supply. Half-bridge output. Logic side half-bridge return. Order IR51HD320 Lead Assignments Lead Leads IR51HD320 VCCUV+ VCLAMP HIGH SIDE SIDE Figure Input/Output Timing Diagram Figure Deadtime Waveform Definitions Order IR51HD320 Package Outline WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey 9BB, Tel: 1883 732020 CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario 2Z8, Tel: (905) 1897 GERMANY: Saalburgstrasse 157, 61350 Homburg Tel: 6172 96590 ITALY: Liguria 10071 Borgaro, Torino Tel: 0111 EAST: (K&H Bldg.), 30-4 Nishi-ikebukuro 3-Chome, Toshima-ku, Tokyo Japan Tel: 3983 0086 SOUTHEAST ASIA: Outram Road, #10-02 Boon Liat Building, Singapore 0316 Tel: 8371 http://www.irf.com Sales Offices, Agents Distributors Major Cities Throughout World. 1996 International Rectifier Printed U.S.A. 3-96 Data specifications subject change without notice. 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