2874.2 120V, 1.750 Ohm, Logic Level, N-Channel Power MOSFET

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2874.2 120V, 1.750 Ohm, Logic Level, N-Channel Power MOSFET

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RFP2N12L
2874.2
120V, 1.750 Ohm, Logic Level, N-Channel Power MOSFET
RFP2N12L N-Channel enhancement mode silicon gate power field effect transistor specifically designed with logic level (5V) driving sources applications such programmable controllers, automotive switching, solenoid drivers. This performance accomplished through special gate oxide design which provides full rated conduction gate biases range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09528.
Features
120V rDS(ON) 1.750 Design Optimized Gate Drives Driven Directly from QMOS, NMOS, Circuits Compatible with Automotive Drive Requirements Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance
Ordering Information
PART NUMBER RFP2N12L PACKAGE TO-220AB BRAND RFP2N12L
Majority Carrier Device Related Literature TB334 "Guidelines Soldering Surface Mount Components Boards"
NOTE: When ordering, include entire part number.
Symbol
Packaging
JEDEL TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE)
6-252
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. http://www.intersil.com 407-727-9207 Copyright Intersil Corporation 1999
RFP2N12L
Absolute Maximum Ratings
25oC, Unless Otherwise Specified RFP2N12L Drain Source Voltage (Note VDSS Drain Gate Voltage (Note VDGR Gate Source Voltage Continuous Drain Current Pulsed Drain Current (Note Maximum Power Dissipation Derate Above 25oC Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief Tpkg UNITS
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 125oC.
Electrical Specifications
PARAMETER
25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS 250µA, VDS, 250µA (Figure Rated BVDSS, Rated BVDSS, 125oC 25V, 1MHz (Figure ±100 1.750 UNITS
oC/W
Drain Source Breakdown Voltage Gate Threshold Voltage Zero-Gate Voltage Drain Current
Gate Source Leakage Current Drain Source Voltage (Note Drain Source Resistance (Note Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction Case
IGSS VDS(ON) rDS(ON) td(ON) td(OFF) CISS COSS CRSS
±10V, (Figure 75V, 6.25, (Figures
Source Drain Diode Specifications
PARAMETER Source Drain Diode Voltage (Note Diode Reverse Recovery Time NOTES: Pulsed: pulse duration 300µs max, duty cycle Repetitive rating: pulse width limited maximum junction temperature. SYMBOL dlSD/dt 50A/µs TEST CONDITIONS UNITS
6-253
RFP2N12L Typical Performance Curves
POWER DISSIPATION MULTIPLIER
Unless Otherwise Specified
CASE TEMPERATURE (oC)
DRAIN CURRENT
CASE TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT CASE TEMPERATURE
OPERATION THIS AREA LIMITED rDS(ON) DRAIN CURRENT
RATED 25oC DRAIN CURRENT
25oC PULSE DURATION 80µs
0.10
0.01
VDS, DRAIN SOURCE VOLTAGE
1000
VDS, DRAIN SOURCE VOLTAGE
FIGURE FORWARD BIAS SAFE OPERATING AREA
FIGURE SATURATION CHARACTERISTICS
IDS(ON), DRAIN SOURCE CURRENT
125oC 125oC -40oC VGS, GATE SOURCE VOLTAGE rDS(ON), DRAIN SOURCE RESISTANCE PULSE DURATION 80µs -40oC 25oC
PULSE DURATION 80µs
125oC
25oC
-40oC
DRAIN CURRENT
FIGURE TRANSFER CHARACTERISTICS
FIGURE DRAIN SOURCE RESISTANCE DRAIN CURRENT
6-254
RFP2N12L Typical Performance Curves
250µA NORMALIZED GATE THRESHOLD VOLTAGE
Unless Otherwise Specified (Continued)
NORMALIZED DRAIN SOURCE RESISTANCE
250µA
JUNCTION TEMPERATURE (oC) JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
CAPACITANCE (pF) 1MHz CISS CRSS COSS VDS, DRAIN SOURCE VOLTAGE
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE
IG(REF) 0.095mA GATE SOURCE VOLTAGE BVDSS 37.5 0.75BVDSS 0.50BVDSS 0.25BVDSS DRAIN SOURCE VOLTAGE G(REF) IG(ACT) TIME (µs) G(REF) IG(ACT) VGS, GATE SOURCE VOLTAGE
112.5
CISS
BVDSS
COSS
CRSS VDS, DRAIN SOURCE VOLTAGE
NOTE: Refer Intersil Applications Notes AN7254 AN7260 FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE FIGURE NORMALIZED SWITCHING WAVEFORMS CONSTANT GATE CURRENT
Test Circuits Waveforms
td(ON)
tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
6-255
RFP2N12L
Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Intersil semiconductor products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
information regarding Intersil Corporation products, site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation 883, Mail Stop 53-204 Melbourne, 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil Mercure Center 100, Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, Hsing North Road Taipei, Taiwan Republic China TEL: (886) 2716 9310 FAX: (886) 2715 3029
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2874.2 120V, 1.750 Ohm, Logic Level, N-Channel Power MOSFET

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