2872.2 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs

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2872.2 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs

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RFP2N08L, RFP2N10L
2872.2
100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs
RFP2N08L RFP2N10L N-Channel enhancement mode silicon gate power field effect transistors specifically designed with logic level (5V) driving sources applications such programmable controllers, automotive switching, solenoid drivers. This performance accomplished through special gate oxide design which provides full rated conductance gate biases range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA0924.
Features
100V rDS(ON) 1.050 Design Optimized Gate Drives Driven Directly from QMOS, NMOS, Circuits Compatible with Automotive Drive Requirements Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance
Ordering Information
PART NUMBER RFP2N08L RFP2N10L PACKAGE TO-220AB TO-220AB BRAND RFP2N08L RFP2N10L
Majority Carrier Device Related Literature TB334 "Guidelines Soldering Surface Mount Components Boards"
NOTE: When ordering, include entire part number.
Symbol
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE)
6-248
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. http://www.intersil.com 407-727-9207 Copyright Intersil Corporation 1999
RFP2N08L, RFP2N10L
Absolute Maximum Ratings
25oC, Unless Otherwise Specified RFP2N08L Drain Source Voltage (Note Drain Gate Voltage (RGS (Note VDGR Continuous Drain Current Pulsed Drain Current (Note Gate Source Voltage Maximum Power Dissipation Derate above 25oC. Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief Tpkg RFP2N10L UNITS W/oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 125oC.
Electrical Specifications
PARAMETER
25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS 250µA VGS(TH) IGSS IDSS VDS, 250µA ±10V, Rated BVDSS, Rated BVDSS, 125oC 25V, 1.0MHz (Figure ±100 1.050
oC/W
UNITS
Drain Source Breakdown Voltage RFP2N08L RFP2N10L Gate Threshold Voltage Gate Source Leakage Zero Gate Voltage Drain Current
Drain Source Voltage (Note Drain Source Resistance (Note Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction Case
VDS(ON) rDS(ON) td(ON) td(OFF) CISS COSS CRSS
(Figures 50V, 6.25, (Figures
Source Drain Diode Specifications
PARAMETER Source Drain Diode Voltage (Note Reverse Recovery Time NOTES: Pulse test: pulse width 300µs, duty cycle Repetitive rating: pulse width limited maximum junction temperature. SYMBOL dISD/dt 50A/µs TEST CONDITIONS UNITS
6-249
RFP2N08L, RFP2N10L Typical Performance Curves
POWER DISSIPATION MULTIPLIER DRAIN CURRENT CASE TEMPERATURE (oC)
Unless Otherwise Specified
CASE TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT CASE TEMPERATURE
RATED, 25oC DRAIN CURRENT
PULSE DURATION 80µs DUTY CYCLE 0.5% 25oC
DRAIN CURRENT
3.0V 2.0V 4.0V 5.0V
OPERATION THIS AREA LIMITED rDS(ON)
RFP2N08L 0.01
RFP2N10L
VDS, DRAIN SOURCE VOLTAGE
VDS, DRAIN SOURCE VOLTAGE
FIGURE FORWARD BIAS SAFE OPERATING AREA
FIGURE SATURATION CHARACTERISTICS
IDS(ON), DRAIN SOURCE CURRENT
125V -40V PULSE DURATION 80µs DUTY CYCLE 0.5%
125V
rDS(ON), DRAIN SOURCE
125V RESISTANCE
PULSE DURATION 80µs DUTY CYCLE 0.5%
-40V
-40V
VGS, GATE SOURCE VOLTAGE DRAIN CURRENT
FIGURE TRANSFER CHARACTERISTICS
FIGURE DRAIN SOURCE RESISTANCE DRAIN CURRENT
6-250
RFP2N08L, RFP2N10L Typical Performance Curves
PULSE DURATION 80ms DUTY CYCLE 0.5% NORMALIZED GATE THRESHOLD VOLTAGE
Unless Otherwise Specified (Continued)
NORMALIZED DRAIN SOURCE RESISTANCE
250µA
JUNCTION TEMPERATURE (oC)
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
CAPACITANCE (pF) CISS COSS CRSS VDS, DRAIN SOURCE VOLTAGE 0.1MHz CISS CRSS COSS
FIGURE NORMALIZED GATE THRESHOLD JUNCTION TEMPERATURE
GATE SOURCE VOLTAGE IG(REF) 0.094mA PLATEAU VOLTAGES DESCENDING ORDER: BVDSS 0.75 BVDSS 0.50 BVDSS 0.25 BVDSS
DRAIN SOURCE VOLTAGE
GATE SOURCE VOLTAGE DRAIN SOURCE VOLTAGE
TIME (ms)
NOTE: Refer Intersil Application Notes AN7254 AN7260. FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE FIGURE NORMALIZED SWITCHING WAVEFORMS CONSTANT GATE CURRENT
Test Circuit Waveforms
td(ON)
tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
6-251
RFP2N08L, RFP2N10L
Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Intersil semiconductor products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
information regarding Intersil Corporation products, site http://www.intersil.com
Sales Office Headquarters
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2872.2 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs

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