IRF5806 HEXFET® Power MOSFET Trench Technology Ultra On-Resi
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93997
IRF5806
HEXFET® Power MOSFET
Trench Technology Ultra On-Resistance P-Channel MOSFET Available Tape Reel
VDSS
-20V
RDS(on)
86m@VGS -4.5V 147m@VGS -2.5V
-4.0A -3.0A
Description
trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques achieve extremely on-resistance silicon area. This benefit, combined with ruggedized device design that HEXFET power MOSFETs well known for, provides designer with extremely efficient reliable device battery load management applications.
Micro6
Absolute Maximum Ratings
Parameter
25°C 70°C 25°C 70°C TSTG Drain-Source Voltage Continuous Drain Current, -4.5V Continuous Drain Current, -4.5V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction Storage Temperature Range
Max.
-4.0 -3.3 -16.5 0.02
Units
W/°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Max.
62.5
Units
°C/W
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10/04/00
IRF5806
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Min. -0.45
Typ. 0.011 47.1 67.5
Max. Units Conditions -250µA V/°C Reference 25°C, -1mA -4.5V, -4.0A -2.5V, -3.0A -1.2 VGS, -250µA -10V, -4.0A -16V, -16V, 70°C -100 -12V 11.4 -4.0A -16V -4.5V -10V, -4.5V -1.0A -15V 1.0MHz
Source-Drain Ratings Characteristics
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units -2.0 -16.5 -1.2
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, -2.0A, 25°C, -2.0A di/dt -100A/µs
Notes:
Repetitive rating; pulse width limited
max. junction temperature.
When mounted inch square Copper board, 10sec.
Pulse width 300µs; duty cycle
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IRF5806
Drain-to-Source Current
Drain-to-Source Current
-7.5V -5.0V -4.5V -3.5V -3.0V -2.7V -2.0V BOTTOM -1.5V
-7.5V -5.0V -4.5V -3.5V -3.0V -2.7V -2.0V BOTTOM -1.5V
-1.50V
-1.50V
20µs PULSE WIDTH
20µs PULSE WIDTH
-VDS Drain-to-Source Voltage
-VDS Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
-4.0A
DS(on) Drain-to-Source Resistance (Normalized)
Drain-to-Source Current
-15V 20µs PULSE WIDTH
-4.5V
-VGS Gate-to-Source Voltage
Junction Temperature
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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IRF5806
1000
-VGS Gate-to-Source Voltage
Ciss Crss Coss
1MHz SHORTED
-4.0A
-16V
Capacitance (pF)
Ciss
Coss Crss
-VDS Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
OPERATION THIS AREA LIMITED RDS(on)
-ISD Reverse Drain Current
Drain Current
10us 100us
10ms
Single Pulse
-VSD ,Source-to-Drain Voltage
-VDS Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRF5806
D.U.T.
Drain Current
Pulse Width Duty Factor
10a. Switching Time Test Circuit
td(on) d(off)
Case Temperature
Maximum Drain Current Case Temperature
10b. Switching Time Waveforms
Thermal Response thJA
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE)
Notes: Duty factor Peak thJA 0.0001 0.001 0.01
0.00001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF5806
Drain-to-Source Resistance
DS(on) Drain-to -Source Resistance
0.20
0.20
0.16
0.15
0.12
-2.5V
0.10
-4.0A
0.08 -4.5V 0.04
0.05
0.00
0.00 Drain Current
Gate -Source Voltage
Typical On-Resistance Gate Voltage
Typical On-Resistance Drain Current
Current Regulator Same Type D.U.T.
.2µF .3µF
-3mA
Current Sampling Resistors
Charge
14a. Basic Gate Charge Waveform
14b. Gate Charge Test Circuit
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D.U.T.
IRF5806
Package Outline
Micro6
Part Marking Information
Micro6DATE CODE WORK 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000
YEAR
NUMBER
PLES:
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IRF5806
Tape Reel Information
Micro6
8.00 MAX.
TES: ILLIM -541
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 EUROPEAN REGIONAL CENTRE: 439/445 Godstone Whyteleafe, Surrey OBL, Tel: (0)20 8645 8000 CANADA: Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 2200 GERMANY: Saalburgstrasse 157, 61350 Homburg Tel: 6172 96590 ITALY: Liguria 10071 Borgaro, Torino Tel: 0111 JAPAN: Bldg., 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Tel: (0)3 3983 0086 SOUTHEAST ASIA: Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: (0)838 4630 TAIWAN:16 Suite 207, Sec. South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data specifications subject change without notice.10/00
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