Munich/Germany, April 2001 Infineon Technologies (FSE/NYSE: IFX) today
|
|
|
Top Searches for this datasheet
Infineon Technologies Introduces Type High Performance Memory, Specifically Designed Networking High-Speed Cache Applications
Munich/Germany, April 2001 Infineon Technologies (FSE/NYSE: IFX) today introduced DRAM product line strongly growing market networking applications. "RLDRAM" (Reduced Latency DRAM) family combines three important features specifically needed networking cache applications; high density, high bandwidth, fast random SRAM-like access. RLDRAM high performance SDRAM operating 300MHz clock frequency using Double Data Rate (DDR) interface. first product Mbit device, which comes 8Mx32 16Mx16 organizations. RLDRAM provides internal memory banks. Accessing these banks sequential manner, RLDRAM offers sustained data bandwidth 19.2 Gbit/s, while still allowing random access within each bank. RLDRAM based internal memory architecture, which allows ultrafast random access with cycle times down 25ns. Standard SDRAMs operate cycle times 50ns. RLDRAM thereby closes between DRAM SRAM offering ideal solution networking cache applications. architecture RLDRAM been optimized allow shortest possible cycle time specifically minimizes "latency", i.e. time from beginning access cycle availability first data. This access time particularly critical applications where subsequent actions depend early termination previous memory look-up. Typical examples applications networking, e.g. switches routers where controllers need read routing tables fastest possible time assemble data packets quickly, well cache
Trade Press: INFMP200104.71
Contact: Worldwide Headquarter: Marius Dittert Phone/Fax: ++49 20168/28482 marius.dittert@infineon.com
U.S.A.: Chris Goodhart Phone/Fax: 6389/2424 chris.goodhart@infineon.com
Asia: Kaye Phone/Fax: ++65 8400 689/082 kaye.lim@infineon.com
applications where short reaction time critical total response time memory subsystem. these applications have alternative expensive SRAM. Thin Profile Ball Grid Array (T-FBGA 144) package allows system designers avoid slow cumbersome address multiplexing traditionally used TSOPpackaged DRAM products. Additionally this package offers reduced parasitics high frequency operation well thermal resistance optimum heat transfer printed circuit board ambient air. Standard SDRAMs operate volts, whereas RLDRAM operates from 2.5V 1.8V volts memory array volts section. This voltage reduction allows data transfer board frequencies 300MHz (600 Mbit/sec), which equivalent bandwidth Gbytes/s device organization Gbytes/s part. "The RLDRAM product line featuring innovative chip architecture data protocol which pushes limits random access data bandwidth," said Ernst Strasser, Director Product Marketing Graphics Specialty Memories Infineon's Memory Business Group "The RLDRAM example Infineon applying expertise chip design manufacturing product offerings meet strongly growing demand high-performance memory networking market." First samples 256-Mbit RLDRAM organized 8Mx32 16Mx16 will available 2001. Volume production expected begin 2002. additional information about Infineon's product portfolio DRAMs modules, please visit following URL:
Trade Press:: INFMP200104.71 Contact: Worldwide Headquarter: Marius Dittert Phone/Fax: ++49 20168/28482 marius.dittert@infineon.com
U.S.A.: Chris Goodhart Phone/Fax: 6389/2424 chris.goodhart@infineon.com
Asia: Kaye Phone/Fax: ++65 8400 689/8441 kaye.lim@infineon.com
About Infineon Infineon Technologies Munich, Germany, offers semiconductor system solutions applications wired wireless communications markets, security systems smartcards, automotive industrial sectors, well memory products. With global presence, Infineon operates from Jose, Asia-Pacific region from Singapore Japan from Tokyo. fiscal year 2000 (ending September), company achieved sales Euro 7.28 billion with about 29,000 employees worldwide. Infineon listed index Frankfurt Stock Exchange York Stock Exchange (ticker symbol: IFX). Further information available www.infineon.com.
Trade Press:: INFMP200104.71 Contact: Worldwide Headquarter: Marius Dittert Phone/Fax: ++49 20168/28482 marius.dittert@infineon.com
U.S.A.: Chris Goodhart Phone/Fax: 6389/2424 chris.goodhart@infineon.com
Asia: Kaye Phone/Fax: ++65 8400 689/8441 kaye.lim@infineon.com
Other recent searches
MSA-0736 - MSA-0736 MSA-0736 Datasheet
GW5BRC15L02 - GW5BRC15L02 GW5BRC15L02 Datasheet
CXP82000 - CXP82000 CXP82000 Datasheet
CXP82052 - CXP82052 CXP82052 Datasheet
82060 - 82060 82060 Datasheet
BAT54SLT1 - BAT54SLT1 BAT54SLT1 Datasheet
AB-FT31193SWC - AB-FT31193SWC AB-FT31193SWC Datasheet
AB-FT21093WC - AB-FT21093WC AB-FT21093WC Datasheet
2SC5730 - 2SC5730 2SC5730 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
