Silicon triple diffusion planar type Darlington 0.7±0.1 midi

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

Silicon triple diffusion planar type Darlington 0.7±0.1 midi

Datasheet Thumbnail

Top Searches for this datasheet

2SD1277, 2SD1277A
Silicon triple diffusion planar type Darlington
0.7±0.1
midium speed power switching Complementary 2SB0951 (2SB951) 2SB0951A (2SB951A)
Unit:
10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 3.1±0.1 1.4±0.1 1.3±0.2 +0.2 -0.1 0.8±0.1 2.54±0.25 5.08±0.5 4.2±0.2
16.7±0.3 14.0±0.5
High foward current transfer ratio High-speed switching Full-pack package which installed heat sink with screw
Absolute Maximum Ratings (TC=25°C)
Parameter Symbol VCBO VCEO VEBO Tstg Ratings +150 Unit 2SD1277 2SD1277A 2SD1277
Collector base voltage Collector
Solder
7.5±0.2
Features
emitter voltage 2SD1277A Emitter base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a)
Internal Connection
Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector emitter voltage 2SD1277 2SD1277A 2SD1277 2SD1277A
(TC=25°C)
Symbol ICBO IEBO VCEO hFE1* hFE2 VCE(sat) VBE(sat) tstg Conditions 60V, 80V, 30mA, 10V, 0.5A, 1MHz 8mA, -8mA, 2000 10000 Unit
Forward current transfer ratio Collector emitter saturation voltage Base emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
Rank classification
2000 5000 4000 10000
Rank hFE1
Note)The part numbers parenthesis show conventional part number.
TC=Ta With heat sink With heat sink Without heat sink (PC=2W) TC=25°C
2SD1277, 2SD1277A
Collector emitter saturation voltage VCE(sat)
VCE(sat)
IC/IB=250 IC/IB=500 IC/IB=1000 TC=25°C
Collector power dissipation
Collector current
IB=4.0mA 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 1.0mA 0.5mA
0.03
0.01
Ambient temperature (°C)
Collector emitter voltage
Collector current
VCE(sat)
Collector emitter saturation voltage VCE(sat)
IC/IB=500 TC=100°C 25°C -25°C
VCB(sat)
100000
IC/IB=500 VCE=3V
Base emitter saturation voltage VBE(sat)
Forward current transfer ratio
30000
TC=100°C 25°C -25°C
TC=-25°C 100°C 25°C
10000
3000 1000
0.03
0.03
0.01
0.01
Collector current
Collector current
Collector current
Area safe operation (ASO)
repetitive pulse TC=25°C 0.03 0.01 t=10ms
Rth(t)
Without heat sink With heat sink
Thermal resistance Rth(t) (°C/W)
Collector current
2SD1277A
2SD1277
10-1
1000
10-2 10-4
10-3
10-2
10-1
Collector emitter voltage
Time
Request your special attention precautions using technical information semiconductors described this material
export permit needs obtained from competent authorities Japanese Government products technologies described this material controlled under "Foreign Exchange Foreign Trade Law" exported taken Japan. technical information described this material limited showing representative characteristics applied circuit examples products. does constitute warranting industrial property, granting relative rights, granting license. products described this material intended used standard applications general electronic equipment (such office equipment, communications equipment, measuring instruments household appliances). Consult sales staff advance information following applications: Special applications (such airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems safety devices) which exceptional quality reliability required, failure malfunction products directly jeopardize life harm human body. applications other than standard applications intended. products product specifications described this material subject change without notice reasons modification and/or improvement. final stage your design, purchasing, products, therefore, most up-to-date Product Standards advance make sure that latest specifications satisfy your requirements. When designing your equipment, comply with guaranteed values, particular those maximum rating, range operating power supply voltage heat radiation characteristics. Otherwise, will liable defect which arise later your equipment. Even when products used within guaranteed values, redundant design recommended, that such equipment violate relevant laws regulations because function products. When using products which packing required, observe conditions (including shelf life after-unpacking standby time) agreed upon when specification sheets individually exchanged. part this material reprinted reproduced means without written permission from company.
Please read following notes before using datasheets
These materials intended reference assist customers with selection Panasonic semiconductor products best suited their applications. modification other reasons, information contained this material, such available product types, technical data, subject change without notice. Customers advised contact semiconductor sales office obtain latest information before starting precise technical research and/or purchasing activities. Panasonic endeavoring continually improve quality reliability these materials there always possibility that further rectifications will required future. Therefore, Panasonic will assume liability damages arising from errors etc. that appear this material. These materials solely intended customer's individual use. Therefore, without prior written approval Panasonic, other such reproducing, selling, distributing this material third party, Internet other way, prohibited.
2001

Silicon triple diffusion planar type Darlington 0.7±0.1 midi

Top Searches for this datasheet

Other recent searches