Silicon triple diffusion planar type Darlington 0.7±0.1 powe

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Silicon triple diffusion planar type Darlington 0.7±0.1 powe

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2SD1276, 2SD1276A
Silicon triple diffusion planar type Darlington
0.7±0.1
power amplification Complementary 2SB0950 (2SB950) 2SB0950A (2SB950A)
Unit:
10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 3.1±0.1 1.4±0.1 1.3±0.2 +0.2 -0.1 0.8±0.1 2.54±0.25 5.08±0.5 4.2±0.2
14.0±0.5
Absolute Maximum Ratings
Parameter Collector base voltage Collector 2SD1276 2SD1276A 2SD1276 Symbol VCBO VCEO VEBO Tstg
16.7±0.3
High foward current transfer ratio High-speed switching Full-pack package which installed heat sink with screw (TC=25°C)
Ratings +150 Unit
emitter voltage 2SD1276A Emitter base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
Solder
7.5±0.2
Features
1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a)
Internal Connection
Electrical Characteristics
Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector emitter voltage 2SD1276 2SD1276A 2SD1276 2SD1276A 2SD1276 2SD1276A
(TC=25°C)
Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VCE(sat) tstg Conditions 60V, 80V, 30V, 40V, 30mA, 0.5A 12mA 20mA 10V, 0.5A, 1MHz 12mA, -12mA, 1000 2000
Unit
Forward current transfer ratio
10000
Collector emitter saturation voltage Base emitter voltage Transition frequency Turn-on time Storage time Fall time
Rank classification
2000 5000 4000 10000
Rank hFE2
Note)The part numbers parenthesis show conventional part number.
TC=Ta With heat sink With heat sink Without heat sink (PC=2W) TC=25°C IB=4.0mA
2SD1276, 2SD1276A
VCE=3V
Collector power dissipation
Collector current
Collector current
3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 1.0mA 0.5mA
25°C TC=100°C -25°C
Ambient temperature (°C)
Collector emitter voltage
Base emitter voltage
VCE(sat)
Collector emitter saturation voltage VCE(sat)
IC/IB=250 TC=100°C -25°C 0.03 0.01 0.01 0.03 25°C
10000
Collector output capacitance (pF)
VCE=3V IE=0 f=1MHz TC=25°C
Forward current transfer ratio
3000 1000
TC=100°C 25°C -25°C
0.01 0.03
Collector current
Collector current
Collector base voltage
Area safe operation (ASO)
repetitive pulse TC=25°C
Rth(t)
Without heat sink With heat sink
Thermal resistance Rth(t) (°C/W)
Collector current
t=1ms 10ms 0.03 0.01
2SD1276A
2SD1276
10-1
1000
10-2 10-4
10-3
10-2
10-1
Collector emitter voltage
Time
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2001

Silicon triple diffusion planar type Darlington 0.7±0.1 powe

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