Silicon triple diffusion planar type Darlington 0.7±0.1 powe

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Silicon triple diffusion planar type Darlington 0.7±0.1 powe

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2SD1275, 2SD1275A
Silicon triple diffusion planar type Darlington
0.7±0.1
power amplification Complementary 2SB0949 (2SB949) 2SB0949A (2SB949A)
Unit:
10.0±0.2 5.5±0.2 2.7±0.2
4.2±0.2
4.2±0.2
16.7±0.3
High foward current transfer ratio High-speed switching Full-pack package which installed heat sink with screw (TC=25°C)
Ratings +150 Unit
7.5±0.2
Features
3.1±0.1
14.0±0.5
Absolute Maximum Ratings
Parameter Collector base voltage Collector 2SD1275 2SD1275A 2SD1275 Symbol VCBO VCEO VEBO Tstg
1.4±0.1
1.3±0.2
Solder
-0.1 0.8±0.1
+0.2
2.54±0.25 5.08±0.5
emitter voltage 2SD1275A Emitter base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a)
Internal Connection
Electrical Characteristics
Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector emitter voltage 2SD1275 2SD1275A 2SD1275 2SD1275A 2SD1275 2SD1275A
(TC=25°C)
Symbol ICBO ICEO IEBO VCEO hFE1 hFE2 VCE(sat) tstg
Conditions 60V, 80V, 30V, 40V, 30mA, 10V, 0.5A, 1MHz 8mA, -8mA,
Unit
1000 2000 10000
Forward current transfer ratio Base emitter voltage Collector emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
Rank classification
2000 5000 4000 10000
Rank hFE2
Note)The part numbers parenthesis show conventional part number.
TC=Ta With heat sink With heat sink Without heat sink (PC=2W) TC=25°C
2SD1275, 2SD1275A
VCE=4V
Collector power dissipation
Collector current
Collector current
IB=2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA 0.2mA
25°C TC=100°C -25°C
Ambient temperature (°C)
Collector emitter voltage
Base emitter voltage
VCE(sat)
Collector emitter saturation voltage VCE(sat)
IC/IB=250 0.03 0.01 0.01 0.03 TC=-25°C 100°C 25°C
10000
Collector output capacitance (pF)
VCE=4V IE=0 f=1MHz TC=25°C
Forward current transfer ratio
3000 1000
TC=100°C
25°C -25°C
0.01 0.03
Collector current
Collector current
Collector base voltage
Area safe operation (ASO)
repetitive pulse TC=25°C
Rth(t)
Without heat sink With heat sink
Thermal resistance Rth(t) (°C/W)
Collector current
0.03 0.01 t=10ms
2SD1275A
2SD1275
10-1
1000
10-2 10-4
10-3
10-2
10-1
Collector emitter voltage
Time
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2001

Silicon triple diffusion planar type Darlington 0.7±0.1 powe

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