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0.7±0.1 high-speed switching high current amplification ratio Fea
Top Searches for this datasheet2SD1272 0.7±0.1 high-speed switching high current amplification ratio Features High forward current transfer ratio Satisfactory linearity forward current transfer ratio Full-pack package which installed heat sink with screw 10.0±0.2 5.5±0.2 4.2±0.2 2.7±0.2 7.5±0.2 16.7±0.3 3.1±0.1 4.2±0.2 Solder (4.0) 1.4±0.1 1.3±0.2 0.5+0.2 -0.1 14.0±0.5 Absolute Maximum Ratings 25°C Parameter Collector base voltage Collector emitter voltage Emitter base voltage Peak collector current Collector current Base current Collector power dissipation 25°C 25°C Tstg Symbol VCBO VCEO VEBO Rating +150 Unit 0.8±0.1 2.54±0.3 5.08±0.5 Base Collector Emitter EIAJ: SC-67 TO-220F Package Junction temperature Storage temperature Electrical Characteristics 25°C Parameter Collector cutoff current Emitter cutoff current Collector emitter voltage Forward current transfer ratio Symbol ICBO IEBO VCEO VCE(sat) Conditions 0.02 Unit Collector emitter saturation voltage Transition frequency Note) Rank classification Rank 2SD1272 TC=Ta With heat sink With heat sink Without heat sink (PC=2W) TC=25°C IB=400µA 350µA 300µA 250µA 200µA 150µA 100µA 50µA Collector emitter saturation voltage VCE(sat) VCE(sat) IC/IB=25 Collector power dissipation Collector current TC=100°C 25°C -25°C 0.03 0.01 0.01 0.03 Ambient temperature (°C) Collector emitter voltage Collector current VBE(sat) 10000 10000 VCE=4V 3000 1000 0.01 0.03 IC/IB=25 VCE=4V f=10MHz TC=25°C Base emitter saturation voltage VBE(sat) Forward current transfer ratio 25°C TC=100°C 1000 TC=100°C 25°C -25°C -25°C 0.03 0.01 0.01 0.03 0.01 0.03 Transition frequency (MHz) 3000 Collector current Collector current Collector current Area safe operation (ASO) repetitive pulse TC=25°C Rth(t) Without heat sink With heat sink Thermal resistance Rth(t) (°C/W) Collector current 0.03 0.01 1000 10ms t=1ms 10-1 10-2 10-4 10-3 10-2 10-1 Collector emitter voltage Time Request your special attention precautions using technical information semiconductors described this material export permit needs obtained from competent authorities Japanese Government products technologies described this material controlled under "Foreign Exchange Foreign Trade Law" exported taken Japan. technical information described this material limited showing representative characteristics applied circuit examples products. does constitute warranting industrial property, granting relative rights, granting license. products described this material intended used standard applications general electronic equipment (such office equipment, communications equipment, measuring instruments household appliances). 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