Silicon epitaxial planar type power switching Complementary 2SB09

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Silicon epitaxial planar type power switching Complementary 2SB09

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2SD1271, 2SD1271A
Silicon epitaxial planar type
power switching Complementary 2SB0946 (2SB946) 2SB0946A (2SB946A)
Unit:
0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 3.1±0.1 1.4±0.1 1.3±0.2 +0.2 -0.1 0.8±0.1 2.54±0.25 5.08±0.5 4.2±0.2
Features
collector emitter saturation voltage VCE(sat) Satisfactory linearity foward current transfer ratio Large collector current Full-pack package which installed heat sink with screw (TC=25°C)
Absolute Maximum Ratings
Parameter Collector base voltage Collector 2SD1271 2SD1271A 2SD1271 Symbol VCBO VCEO VEBO Tstg
16.7±0.3 14.0±0.5
Ratings +150
Unit
emitter voltage 2SD1271A Emitter base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
Solder
7.5±0.2
1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a)
Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector emitter voltage 2SD1271 2SD1271A
(TC=25°C)
Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) tstg Conditions 100V, 10mA, 0.1A 0.25A 0.25A 10V, 0.5A, 10MHz 0.3A, 0.3A, Unit
Forward current transfer ratio Collector emitter saturation voltage Base emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
Rank classification
Rank hFE2
Note)The part numbers parenthesis show conventional part number.
TC=Ta With heat sink With heat sink Without heat sink (PC=2W) TC=25°C
2SD1271, 2SD1271A
Collector emitter saturation voltage VCE(sat)
VCE(sat)
IC/IB=10 IC/IB=20 TC=25°C
Collector power dissipation
Collector current
IB=55mA 50mA 45mA 40mA 35mA 30mA 20mA 15mA 10mA
0.03
0.01 0.01
0.03
Ambient temperature (°C)
Collector emitter voltage
Collector current
VCE(sat)
Collector emitter saturation voltage VCE(sat)
VBE(sat)
Base emitter saturation voltage VBE(sat)
VBE(sat)
Base emitter saturation voltage VBE(sat)
IC/IB=10 IC/IB=20 TC=25°C IC/IB=20 0.03 0.01 0.01 0.03 TC=-25°C 100°C 25°C
IC/IB=20 TC=100°C -25°C 0.03 0.01 0.01 0.03 25°C
0.03
0.01
Collector current
Collector current
Collector current
10000 VCE=2V 10000 3000 1000 0.01 0.03
10000
Collector output capacitance (pF)
VCE=10V f=10MHz TC=25°C IE=0 f=1MHz TC=25°C
Forward current transfer ratio
1000
Transition frequency (MHz)
3000
3000 1000
TC=100°C 25°C -25°C 0.01 0.03
Collector current
Collector current
Collector base voltage
ton, tstg,
Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=-IB2) VCC=50V TC=25°C
2SD1271, 2SD1271A
Area safe operation (ASO)
repetitive pulse TC=25°C
Switching time ton,tstg,tf (µs)
0.03 0.01
Collector current
0.03 0.01
t=0.5ms 10ms
tstg
2SD1271A
2SD1271
1000
Collector current
Collector emitter voltage
Rth(t)
Without heat sink With heat sink
Thermal resistance Rth(t) (°C/W)
10-1
10-2 10-4
10-3
10-2
10-1
Time
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2001

Silicon epitaxial planar type power switching Complementary 2SB09

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