0.7±0.1 power amplification Features High collector base vol

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0.7±0.1 power amplification Features High collector base vol

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2SD1263, 2SD1263A
0.7±0.1
power amplification Features
High collector base voltage VCBO Full-pack package which installed heat sink with screw
10.0±0.2 5.5±0.2
4.2±0.2 2.7±0.2
7.5±0.2
Solder (4.0)
Absolute Maximum Ratings 25°C
14.0±0.5
16.7±0.3
3.1±0.1
4.2±0.2
1.4±0.1
1.3±0.2 0.5+0.2 -0.1
Parameter Collector base voltage Collector emitter voltage 2SD1263 2SD1263A 2SD1263 2SD1263A
Symbol VCBO VCEO VEBO Tstg
Rating
Unit
0.8±0.1
2.54±0.3
5.08±0.5
Emitter base voltage Peak collector current Collector current Collector power dissipation 25°C 25°C
0.75 +150
Base Collector Emitter EIAJ: SC-67 TO-220F Package
Junction temperature Storage temperature
Electrical Characteristics 25°C
Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector emitter voltage 2SD1263 2SD1263A hFE1 hFE2 Base emitter voltage Collector emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Note) Rank classification Rank hFE1 VCE(sat) tstg 2SD1263 2SD1263A 2SD1263 2SD1263A IEBO VCEO ICEO Symbol ICES Conditions Unit
Forward current transfer ratio
2SD1263, 2SD1263A
TC=Ta With heat sink With heat sink Without heat sink (PC=2W) TC=25°C
VCE=10V
Collector power dissipation
Collector current
IB=14mA 12mA 10mA
Collector current
25°C TC=100°C -25°C
Ambient temperature (°C)
Collector emitter voltage
Base emitter voltage
VCE(sat)
Collector emitter saturation voltage VCE(sat)
10000 IC/IB=10
1000 VCE=10V 0.001 0.003
VCE=10V f=10MHz TC=25°C
Forward current transfer ratio
TC=100°C
1000 0.01 0.03
TC=100°C 25°C -25°C
25°C -25°C
0.03
0.01 0.01
0.03
Transition frequency (MHz)
3000
0.01 0.03
Collector current
Collector current
Collector current
Area safe operation (ASO)
repetitive pulse TC=25°C t=1ms 0.03 0.01 0.003 0.001 10ms
Rth(t)
Without heat sink With heat sink
Thermal resistance Rth(t) (°C/W)
Collector current
2SD1263A
2SD1263
10-1
1000
10-2 10-4
10-3
10-2
10-1
Collector emitter voltage
Time
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2001

0.7±0.1 power amplification Features High collector base vol

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