5.031 CPV362MM IGBT MODULE Features Short Circuit
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5.031
CPV362MM
IGBT MODULE
Features
Short Circuit Rated 10µs 125°C, Fully isolated printed circuit board mount package Switching-loss rating includes "tail" losses HEXFRED soft ultrafast diodes Optimized medium operating frequency 10kHz) Fig. Current Frequency curve
Short Circuit Rated Fast IGBT
Product Summary
Output Current Typical Motor Drive ARMS phase (1.4 total) with 90°C, 125°C, Supply Voltage 360Vdc, Power Factor 0.8, Modulation Depth (See Figure
Description
IGBT technology International Rectifier's advanced line (Insulated Metal Substrate) Power Modules. These modules more efficient than comparable bipolar transistor modules, while same time having simpler gate-drive requirements familiar power MOSFET. This superior technology been coupled state materials system that maximizes power throughput with thermal resistance. This package highly suited power applications where space premium. These short circuit rated devices especially suited motor control other totem-pole applications requiring short circuit withstand capability.
IMS-2
Absolute Maximum Ratings
Parameter
VCES 25°C 100°C 100°C VISOL 25°C 100°C TSTG Collector-to-Emitter Voltage Continuous Collector Current, each IGBT Continuous Collector Current, each IGBT Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Isolation Voltage, terminal case, minute Maximum Power Dissipation, each IGBT Maximum Power Dissipation, each IGBT Operating Junction Storage Temperature Range Soldering Temperature, sec. Mounting torque, 6-32 screw.
Max.
2500 +150 (0.063 (1.6mm) from case) (0.55
Units
VRMS
Thermal Resistance
Parameter
(IGBT) (DIODE) (MODULE) Junction-to-Case, each IGBT, IGBT conduction Junction-to-Case, each diode, diode conduction Case-to-Sink, flat, greased surface Weight module
Typ.
(0.7)
Max.
Units
°C/W (oz)
Revision
C-409
Order
CPV362MM
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
VCE(on)
Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. Breakdown Voltage Collector-to-Emitter Saturation Voltage
VGE(th) VGE(th)/TJ ICES IGES
Gate Threshold Voltage Temperature Coeff. Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current
Min. Typ. Max. Units Conditions 250µA 0.42 V/°C 1.0mA 4.6A 7.9A Fig. 4.6A, 150°C VGE, 250µA mV/°C VGE, 250µA 100V, =8.0A 600V 1700 600V, 150°C 8.0A Fig. 8.0A, 150°C ±500 ±20V
Switching Characteristics 25°C (unless otherwise specified)
td(on) td(off) Eoff td(on) td(off) Cies Coes Cres di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate Emitter Charge (turn-on) Gate Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate Fall Recovery During Min. Typ. 0.18 0.14 0.32 0.56 Max. Units Conditions 8.0A 400V Fig. 25°C 4.6A, 480V 15V, Energy losses include "tail" diode reverse recovery. Fig. 0.48 360V, 125°C 15V, VCPK 500V 150°C, Fig. 4.6A, 480V 15V, Energy losses include "tail" diode reverse recovery. Fig. 1.0MHz 25°C Fig. 125°C 8.0A 25°C Fig. 125°C 200V 25°C Fig. 125°C di/dt 200A/µs A/µs 25°C Fig. 125°C Pulse width 5.0µs, single shot.
Notes: Repetitive rating; GE=20V, pulse width limited max. junction temperature. fig.
VCC=80%(V CES), VGE=20V, L=10µH, fig. Pulse width 80µs; duty factor 0.1%.
C-410
Order
CPV362MM
90°C 125°C Power Factor Modulation Depth Rated Voltage
Frequency (kHz)
Fig. Current Output Power, Synthesized Sine Wave
Collector-to-Emitter Current
25°C 150°C
Collector-to-Emitter Current
150°C
25°C
20µs PULSE WIDTH
100V PULSE WIDTH
Collector-to-Emitter Voltage
VGE, Gate-to-Emitter Voltage
Fig. Typical Output Characteristics
Fig. Typical Transfer Characteristics
C-411
Order
Total Output Power (kW)
Load Current
CPV362MM
Collector-to-Emitter Voltage
Maximum Collector Current
80µs PULSE WIDTH
9.2A
4.6A
2.3A
Case Temperature (°C)
Case Temperature (°C)
Fig. Maximum Collector Current Case Temperature
Fig. Collector-to-Emitter Voltage Case Temperature
Therm onse thJC
0.20 0.10 0.02 0.01
0.01 0.00001
0.0001
0.001
0.01
ectangular Pulse tion (sec)
Fig. Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
C-412
Order
CPV362MM
Gate-to-Emitter Voltage
1MHz SHORTED
400V 8.0A
Capacitance (pF)
Cies
Coes
Cres
VCE, Collector-to-Emitter Voltage
Total Gate Charge (nC)
Fig. Typical Capacitance Collector-to-Emitter Voltage
Fig. Typical Gate Charge Gate-to-Emitter Voltage
0.34
Total Switching Losses (mJ)
0.33
0.32
Total Switching Losses (mJ)
480V 25°C 4.6A
480V
9.2A
0.31
4.6A 2.3A
0.30
0.29
Gate Resistance
Case Temperature (°C)
Fig. Typical Switching Losses Gate Resistance
Fig. Typical Switching Losses Case Temperature
C-413
Order
CPV362MM
Collector-to-Emitter Current
Total Switching Losses (mJ)
150°C 480V
125°C
SAFE OPERATING AREA
1000
Collector-to-Emitter Current
VCE, Collector-to-Emitter Voltage
Fig. Typical Switching Losses Collector-to-Emitter Current
Fig. Turn-Off
Instantaneous Forward Current
150°C 125°C 25°C
Forward Voltage Drop
Fig. Maximum Forward Voltage Drop Instantaneous Forward Current
C-414
Order
CPV362MM
200V 125°C 25°C
200V 125°C 25°C
(ns)
8.0A
IRRM
8.0A 4.0A
4.0A
(A/µs)
1000
1000
(A/µs)
Fig. Typical Reverse Recovery dif/dt
Fig. Typical Recovery Current dif/dt
10000
200V 125°C 25°C
200V 125°C 25°C
di(rec)M/dt (A/µs)
(nC)
4.0A
1000
8.0A
8.0A
4.0A
(A/µs)
1000
1000
(A/µs)
Fig. Typical Stored Charge dif/dt
Fig. Typical di(rec)M/dt dif/dt
C-415
Order
CPV362MM
Same type device D.U.T. +Vge
430µF D.U.T.
td(off)
Eoff
Fig. Test Circuit Measurement
ILM, Eon, Eoff(diode) trr, Qrr, Irr, td(on), td(off),
t1+5µS
Fig. Test Waveforms Circuit Fig. 18a, Defining
Eoff, td(off),
GATE VOLTAGE D.U.T.
VOLTAGE CURRENT
DIODE RECOVERY WAVEFORMS td(on) DIODE REVERSE RECOVERY ENERGY
Erec
Fig. Test Waveforms Circuit Fig. 18a,
Defining td(on),
Fig. Test Waveforms Circuit Fig. 18a,
Defining rec, trr, Qrr,
Refer Section following: Appendix Section page Fig. Macro Waveforms Test Circuit Fig. Fig. Clamped Inductive Load Test Circuit Fig. Pulsed Collector Current Test Circuit Package Outline IMS-2 Package pins) Section page D-14
C-416
Order
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