CHANNEL 100V 0.32 TO-251/TO-252 STripFETPOWER MOSFET TYPE STD5NE1

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CHANNEL 100V 0.32 TO-251/TO-252 STripFETPOWER MOSFET TYPE STD5NE1

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STD5NE10
CHANNEL 100V 0.32 TO-251/TO-252 STripFETPOWER MOSFET
TYPE STD5NE10
DS(o
TYPICAL RDS(on) 0.32 EXCEPTIONAL dv/dt CAPABILITY AVALANCHE TESTED 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION SUFFIX "T4" ORDERING TAPE REEL IPAK TO-251 (Suffix "-1")
DESCRIPTION This Power MOSFET latest development STMicroelectronics unique "Single Feature SizeTM" strip-based process. resulting transistor shows extremely high packing density on-resistance, rugged avalanche characteristics less critical alignment steps therefore remarkable manufacturing reproducibility. APPLICATIONS MOTOR CONTROL (DISK DRIVES, etc.) DC-DC DC-AC CONVERTERS SYNCHRONOUS RECTIFICATION
DPAK TO-252 (Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb dv/dt( Parameter Drain-source Voltage (VGS Drain- gate Voltage Gate-source Voltage Drain Current (continuous) Drain Current (continuous) Drain Current (pulsed) Total Dissipation Derating actor Peak Diode Recovery voltage slope Storage emperature Max. Operating Junction Temperature
Value 0.17
di/dt A/µs, V(BR)DSS, TJMAX
Unit V/ns
Pulse width limited safe operating area
1999
STD5NE10
THERMAL DATA
-case -amb thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbo Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting 30V) Value Unit
ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified)
Symbo (BR)DSS IGSS Parameter Drain-source Breakdown Voltage Test ditions Min. Typ. Max. Unit
Rating Zero Gate Voltage Drain Current Rating Gate-body Leakage Current (VDS
Symbo GS(th) DS(on) Parameter Gate Threshold Voltage Static Drain-source Resistance State Drain Current Test ditions Min. Typ. 0.32 Max. Unit
ID(o DS(on
DYNAMIC
Symbo Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test ditions ID(o DS(on Min. Typ. Max. Unit
STD5NE10
ELECTRICAL CHARACTERISTICS (continued) SWITCHING
Symbo d(on) Parameter Turn-on Delay Rise Time Total Charge Gate-Source Charge Gate-Drain Charge Test ditions (Resistive Load, fig. Min. Typ. Max. Unit
SWITCHING
Symbo d(of (Voff) Parameter Turn-off Delay Fall Off-voltage Rise Fall Cross-over Time Test ditions (Resistive Load, fig. (Induct Load, fig. Min. Typ. Max. Unit
SOURCE DRAIN DIODE
Symbo Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt A/µs (see test circuit, fig. Test ditions Min. Typ. Max. Unit
Pulsed: Pulse duration duty cycle Pulse width limited safe operating area
Safe Operating Area
Thermal Impedance

CHANNEL 100V 0.32 TO-251/TO-252 STripFETPOWER MOSFET TYPE STD5NE1

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