Silicon Darlington Power Transistor SEMICONDUCTOR TECHNICAL DATA

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Silicon Darlington Power Transistor SEMICONDUCTOR TECHNICAL DATA

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Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data Collector-Emitter Sustaining Voltage VCER(sus) Watts Capability Volts Specified -40_C Max. Photoglass Passivation Reliability Stability
Silicon Darlington Power Transistor
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
BU323AP monolithic darlington transistor designed automotive ignition, switching regulator motor control applications.
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
Maximum Lead Temperature Soldering Purposes: from Case Seconds Thermal Resistance, Junction Case Operating Storage Junction Temperature Range Total Power Dissipation 25_C 100_C Derate above 25_C Base Current Continuous Peak Collector Current Continuous Peak Emitter-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Characteristic Rating
10%.
BASE
VCEO(sus)
Symbol
Symbol
Tstg
VCEV
COLLECTOR
EMITTER
Value
DARLINGTON SILICON POWER TRANSISTOR VOLTS WATTS
BU323AP
CASE 340D-01 TO-218 TYPE
Order this document BU323AP/D
Watts Watts W/_C
_C/W
Unit
Unit
BU323AP
1Pulse Test: Pulse Width Duty Cycle FUNCTIONAL TESTS SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS CHARACTERISTICS1 CHARACTERISTICS1
ELECTRICAL CHARACTERISTICS 25_C unless otherwise noted)
Adjust such that reaches Required value.
Pulsed Energy Test (See Figure
Second Breakdown Collector Current with Base-Forward Biased
Fall Time
Storage Time
Output Capacitance (VCB Vdc, ftest kHz)
Diode Forward Voltage Adc)
Base-Emitter Voltage Adc, Vdc)
Base-Emitter Saturation Voltage Adc, mAdc) Adc, mAdc) Adc, mAdc, 40_C)
Collector-Emitter Saturation Voltage Adc, mAdc) Adc, mAdc) Adc, mAdc Adc, mAdc, 40_C)
Current Gain Adc, Vdc) Adc, Vdc) Adc, Vdc)
Emitter Cutoff Current (VEB Vdc,
Collector Cutoff Current (Rated VCBO,
Collector Cutoff Current (Rated VCER, Ohms)
Collector-Emitter Sustaining Voltage (Figure Ohms, Unclamped
Collector-Emitter Sustaining Voltage (Figure mAdc, Vclamp Rated VCEO)
Figure Sustaining Voltage Test Circuit
BC337
1N4001
VCEO
Characteristic
VCER
(VCC Vdc, Adc, Adc) Fig.
CLAMPED
UNCLAMPED
Vclamp
VCEO(sus)
VCER(sus)
VCE(sat)
VBE(sat)
VBE(on)
Symbol
IC2L
Motorola Bipolar Power Transistor Device Data Figure Switching Times Test Circuit
ICBO IEBO ICER IS/B
ftest PULSE WIDTH 1N4001
Figure
2000
mAdc
mAdc
mAdc
Unit
BU323AP
2000 1000 hFE, CURRENT GAIN 150°C COLLECTOR-EMITTER VOLTAGE (VOLTS) 25°C
25°C
COLLECTOR CURRENT (AMP)
0.002
0.005 0.01
0.02 0.05 BASE CURRENT (AMP)
Figure Current Gain
VCE(sat) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) COLLECTOR-EMITTER SATURATION VOLTAGE
Figure Collector Saturation Region
40°C IC/IB 25°C
25°C 40°C
COLLECTOR CURRENT
COLLECTOR CURRENT
Figure Collector-Emitter Saturation Voltage
Figure Base-Emitter Voltage
COLLECTOR CURRENT
TIME
75°C 150°C ICES
25°C IC/IB
25°C
COLLECTOR CURRENT (AMP)
FORWARD REVERSE VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure Turn-Off Switching Time
Figure Collector Cutoff Region
Motorola Bipolar Power Transistor Device Data
BU323AP
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.07 0.05 0.03 0.02 0.01 0.01 0.01 SINGLE PULSE 0.02 0.05 TIME (ms) 1000 2000 0.05 RJC(t) r(t) °C/W CURVES APPLY POWER PULSE TRAIN SHOWN READ TIME TJ(pk) P(pk) RJC(t) P(pk)
0.02
DUTY CYCLE, t1/t2
Figure Thermal Response
COLLECTOR CURRENT (AMP) 25°C BONDING WIRE LIMIT THERMAL LIMIT (SINGLE PULSE) SECOND BREAKDOWN LIMIT VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.01 0.005
Figure Forward Bias Safe Operating Area
There limitations power handling ability transistor average junction temperature second breakdown. Safe operating area curves indicate limits transistor that must observed reliable operation, i.e., transistor must subjected greater dissipation than curves indicate. data Figure based 25_C, TJ(pk) variable depending power level. Second breakdown pulse limits valid duty cycles must derated when 25_C. Second breakdown limitations derate same thermal limitations. Allowable current voltages shown Figure found case temperature using appropriate curve Figure TJ(pk) calculated from data Figure high case temperatures, thermal limitations will reduce power that handled values less than limitations imposed second breakdown.
POWER DERATING FACTOR
INDUCTIVE LOAD
SECOND BREAKDOWN DERATING THERMAL DERATING
1N4001 BC337
0.22
(BU323P) (BU323AP) 1N4001
CASE TEMPERATURE (°C)
selected such that reaches before switch-off. NOTE: Figure specifies energy handling capabilities automotive ignition circuit.
Figure Power Derating
Figure Ignition Test Circuit
Motorola Bipolar Power Transistor Device Data
BU323AP
PACKAGE DIMENSIONS
NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS 19.00 19.60 14.00 14.50 4.20 4.70 1.00 1.30 1.45 1.65 5.21 5.72 2.60 3.00 0.40 0.60 28.50 32.00 14.70 15.30 4.00 4.25 17.50 18.10 3.40 3.80 1.50 2.00 INCHES 0.749 0.771 0.551 0.570 0.165 0.185 0.040 0.051 0.058 0.064 0.206 0.225 0.103 0.118 0.016 0.023 1.123 1.259 0.579 0.602 0.158 0.167 0.689 0.712 0.134 0.149 0.060 0.078
STYLE BASE COLLECTOR EMITTER COLLECTOR
CASE 340D-01 TO-218 TYPE ISSUE
Motorola Bipolar Power Transistor Device Data
BU323AP
Motorola reserves right make changes without further notice products herein. Motorola makes warranty, representation guarantee regarding suitability products particular purpose, does Motorola assume liability arising application product circuit, specifically disclaims liability, including without limitation consequential incidental damages. "Typical" parameters vary different applications. operating parameters, including "Typicals" must validated each customer application customer's technical experts. Motorola does convey license under patent rights rights others. Motorola products designed, intended, authorized components systems intended surgical implant into body, other applications intended support sustain life, other application which failure Motorola product could create situation where personal injury death occur. Should Buyer purchase Motorola products such unintended unauthorized application, Buyer shall indemnify hold Motorola officers, employees, subsidiaries, affiliates, distributors harmless against claims, costs, damages, expenses, reasonable attorney fees arising directly indirectly, claim personal injury death associated with such unintended unauthorized use, even such claim alleges that Motorola negligent regarding design manufacture part. Motorola registered trademarks Motorola, Inc. Motorola, Inc. Equal Opportunity/Affirmative Action Employer.
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JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; Ping Industrial Park, Ting Road, N.T., Hong Kong. 852-26629298
Motorola Bipolar Power Transistor Device Data
*BU323AP/D*
BU323AP/D

Silicon Darlington Power Transistor SEMICONDUCTOR TECHNICAL DATA

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