Triple Diffused Planar Silicon Transistor 2SC5416 Inverter L

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Triple Diffused Planar Silicon Transistor 2SC5416 Inverter L

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Ordering number EN5696
Triple Diffused Planar Silicon Transistor
2SC5416
Inverter Lighting Applications
Features
High breakdown voltage. High reliability (Adoption process). Adoption MBIT process.
Package Dimensions
unit: 2079B-TO220FI (LS)
[2SC5416]
10.0
16.1
16.0
14.0
0.75
Specifications Absolute Maximum Ratings Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO Tc=25°C Tstg Conditions
2.55
2.55
Base Collector Emitter SANYO TO220FI (LS)
Ratings 1000 +150
Unit
Electrical Characteristics Ta=25°C
Parameter Collector Cutoff Current Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Saturation Voltage Saturation Voltage Current Gain Storage Time Fall Time Symbol ICBO ICES VCEO(sus) IEBO VCE(sat) VBE(sat) hFE(1) hFE(2) tstg Conditions VCB=450V, IE=0 VCE=1000V, RBE=0 IC=100mA, IB=0 VEB=9V, IC=0 IC=2A, IB=0.4A IC=2A, IB=0.4A VCE=5V, IC=0.1A VCE=5V, IC=1.5A IC=2A, IB1=0.4A, IB2=-0.8A IC=2A, IB1=0.4A, IB2=-0.8A Ratings 0.15 Unit
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 51598TS (KOTO) TA-1059 No.5696-1/4
2SC5416 Switching Time Test Circuit
VOUT VOUT VOUT VOUT tstg
1.4A
Collector Current,
0.6A
0.4A
Collector Current,
1.8A
1.6A
1.2A 1.0A 0.8A
0.2A
0.05A
0.1A
-40°
Collector-to-Emitter Voltage, Collector-to-Emitter Saturation Voltage, VCE(sat)
Base-to-Emitter Voltage,
0.01 0.01
VCE(sat)
20°C
25°C
-40°C
Ta=120°C
Current Gain,
-40°C
0.01
Collector Current,IC Base-to-Emitter Saturation Voltage, VBE(sat)
Collector Current,IC
VBE(sat)
Switching Time, Time
Time
=200V IB1=5 /IB1 load
tstg
Ta=-40°C
25°C
0.01
120°C
Collector Current,IC
Collector Current,IC
Ta=1
25°C
No.5696-2/4
2SC5416
Time
tstg
=200V =0.4A load
Forward Bias
PT<50µs
Switching Time, Time
Collector Current,IC
0.01 Tc=25°C 1Pulse
1000
Base Current,
Collector-to-Emitter Voltage,
Reverse Bias
Collector Dissipation,
Collector Current,IC
L=200µH Tc=25°C pulse
=-1A
1000
Collector-to-Emitter,
Ambient Temperature,
Collector Dissipation,
Case Temperature,
No.5696-3/4
2SC5416
products described contained herein intended surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment like, failure which directly indirectly cause injury, death property loss. Anyone purchasing products described contained herein above-mentioned shall: Accept full responsibility indemnify defend SANYO ELECTRIC CO., LTD., affiliates, subsidiaries distributors their officers employees, jointly severally, against claims litigation damages, cost expenses associated with such use: impose responsibilty fault negligence which cited such claim litigation SANYO ELECTRIC CO., LTD., affiliates, subsidiaries distributors their officers employees jointly severally. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties. This catalog provides information May, 1998. Specifications information herein subject change without notice.
No.5696-4/4

Triple Diffused Planar Silicon Transistor 2SC5416 Inverter L

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