M3D088 PMBD6100 High-speed double diode Product specificatio

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M3D088 PMBD6100 High-speed double diode Product specificatio

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book, halfpage
M3D088
PMBD6100 High-speed double diode
Product specification Supersedes data 1996 1999
Philips Semiconductors
Product specification
High-speed double diode
FEATURES Small plastic package High switching speed: max. General application Continuous reverse voltage: max. Repetitive peak reverse voltage: max. Repetitive peak forward current: max. APPLICATIONS High-speed switching surface mounted circuits.
view
handbook, columns
PMBD6100
PINNING DESCRIPTION anode (a1) anode (a2) common cathode
DESCRIPTION PMBD6100 consists high-speed switching diodes with common cathodes, fabricated planar technology, encapsulated small SOT23 plastic package.
MAM108
Marking code: made Hong Kong; made Malaysia.
Fig.1 Simplified outline (SOT23) symbol.
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 134). SYMBOL diode VRRM repetitive peak reverse voltage continuous reverse voltage continuous forward current single diode loaded; note Fig.2 double diode loaded; note Fig.2 IFRM IFSM repetitive peak forward current non-repetitive peak forward current square wave; prior surge; Fig.4 t=1s Ptot Tstg Note Device mounted printed-circuit board. total power dissipation storage temperature junction temperature Tamb note +150 PARAMETER CONDITIONS MIN. MAX. UNIT
1999
Philips Semiconductors
Product specification
High-speed double diode
ELECTRICAL CHARACTERISTICS unless otherwise specified. SYMBOL diode forward voltage Fig.3 reverse current Fig.5 diode capacitance reverse recovery time MHz; Fig.6 when switched from measured Fig.7 when switched from Fig.8 0.85 PARAMETER CONDITIONS MIN.
PMBD6100
MAX.
UNIT
forward recovery voltage
1.75
THERMAL CHARACTERISTICS SYMBOL j-tp Note Device mounted printed-circuit board. PARAMETER thermal resistance from junction tie-point thermal resistance from junction ambient note CONDITIONS VALUE UNIT
1999
Philips Semiconductors
Product specification
High-speed double diode
GRAPHICAL DATA
PMBD6100
(mA)
MBD033
handbook, halfpage
MBG382
(mA)
single diode loaded
double diode loaded
Device mounted printed-circuit board.
typical values. typical values. maximum values.
Fig.2
Maximum permissible continuous forward current function ambient temperature.
Fig.3
Forward current function forward voltage.
handbook, full pagewidth IFSM
MBG704
10-1 Based square wave currents. prior surge.
(µs)
Fig.4 Maximum permissible non-repetitive peak forward current function pulse duration.
1999
Philips Semiconductors
Product specification
High-speed double diode
PMBD6100
handbook, halfpage (µA)
MBG379
handbook, halfpage
MBG446
(pF)
(oC)
maximum values. typical values. typical values.
MHz;
Fig.5
Reverse current function junction temperature.
Fig.6
Diode capacitance function reverse voltage; typical values.
1999
Philips Semiconductors
Product specification
High-speed double diode
PMBD6100
handbook, full pagewidth
D.U.T. SAMPLING OSCILLOSCOPE
MGA881
input signal
output signal
Fig.7 Reverse recovery voltage test circuit waveforms.
D.U.T.
OSCILLOSCOPE
MGA882
input signal
output signal
Fig.8 Forward recovery voltage test circuit waveforms.
1999
Philips Semiconductors
Product specification
High-speed double diode
PACKAGE OUTLINE Plastic surface mounted package; leads
PMBD6100
SOT23
detail
scale
DIMENSIONS original dimensions) UNIT max. 0.48 0.38 0.15 0.09 0.95 0.45 0.15 0.55 0.45
OUTLINE VERSION SOT23
REFERENCES JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1999
Philips Semiconductors
Product specification
High-speed double diode
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
PMBD6100
This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications.
Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale.
1999
Philips Semiconductors
Product specification
High-speed double diode
NOTES
PMBD6100
1999
Philips Semiconductors
Product specification
High-speed double diode
NOTES
PMBD6100
1999
Philips Semiconductors
Product specification
High-speed double diode
NOTES
PMBD6100
1999
Philips Semiconductors worldwide company
Argentina: South America Australia: Waterloo Road, NORTH RYDE, 2113, Tel. 9805 4455, Fax. 9805 4466 Austria: Computerstr. A-1101 WIEN, P.O. 213, Tel. 1248, Fax. 1210 Belarus: Hotel Minsk Business Center, Bld. 1211, Volodarski Str. 220050 MINSK, Tel. +375 0733, Fax. +375 0773 Belgium: Netherlands Brazil: South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, James Bourchier Blvd., 1407 SOFIA, Tel. +359 9211, Fax. +359 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. 7381, Fax. 0087 China/Hong Kong: Hong Kong Industrial Technology Centre, Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: South America Czech Republic: Austria Denmark: Sydhavnsgade 1780 COPENHAGEN Tel. 3333, Fax. 3905 Finland: Sinikalliontie FIN-02630 ESPOO, Tel. +358 800, Fax. +358 6158 0920 France: Carnot, BP317, 92156 SURESNES Cedex, Tel. 4099 6161, Fax. 4099 6427 Germany: D-20097 HAMBURG, Tel. 2353 Fax. 2353 6300 Hungary: Austria India: Philips INDIA Ltd, Band Building, floor, 254-D, Annie Besant Road, Worli, MUMBAI 025, Tel. 8541, Fax. 0966 Indonesia: Philips Development Corporation, Semiconductors Division, Gedung Philips, Buncit Raya Kav.99-100, JAKARTA 12510, Tel. 0040 ext. 2501, Fax. 0080 Ireland: Newstead, Clonskeagh, DUBLIN Tel. +353 7640 000, Fax. +353 7640 Israel: RAPAC Electronics, Kehilat Saloniki 18053, AVIV 61180, Tel. +972 0444, Fax. +972 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza Novembre 20124 MILANO, Tel. 2531, Fax. 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. 3740 5130, Fax. 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. 1412, Fax. 1415 Malaysia: Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. 5214, Fax. 4880 Mexico: 5900 Gateway East, Suite 200, PASO, TEXAS 79905, Tel. +9-5 7381, +9-5 0087 Middle East: Italy Netherlands: Postbus 90050, 5600 EINDHOVEN, Bldg. Tel. 82785, Fax. 88399 Zealand: Wagener Place, C.P.O. 1041, AUCKLAND, Tel. 4160, Fax. 7811 Norway: Manglerud 0612, OSLO, Tel. 8000, Fax. 8341 Pakistan: Singapore Philippines: Philips Semiconductors Philippines Inc., Valero Salcedo Village, P.O. 2108 MCC, MAKATI, Metro MANILA, Tel. 6380, Fax. 3474 Poland: Lukiska 04-123 WARSZAWA, Tel. 2831, Fax. 2327 Portugal: Spain Romania: Italy Russia: Philips Russia, Usatcheva 35A, 119048 MOSCOW, Tel. 6918, Fax. 6919 Singapore: Lorong Payoh, SINGAPORE 319762, Tel. 2538, Fax. 6500 Slovakia: Austria Slovenia: Italy South Africa: S.A. PHILIPS Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. 58088 Newville 2114, Tel. 5401, Fax. 5398 South America: Vicente Pinzon, 173, floor, 04547-130 PAULO, Brazil, Tel. 2333, Fax. 2382 Spain: Balmes 08007 BARCELONA, Tel. 6312, Fax. 4107 Sweden: Kottbygatan Akalla, S-16485 STOCKHOLM, Tel. 5985 2000, Fax. 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 Tel. 2741 Fax. 3263 Taiwan: Philips Semiconductors, Chien Rd., Sec. TAIPEI, Taiwan Tel. +886 2134 2886, Fax. +886 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. 4090, Fax. 0793 Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. 81260 Umraniye, ISTANBUL, Tel. 1500, Fax. 1813 Ukraine: PHILIPS UKRAINE, Patrice Lumumba str., Building Floor 252042 KIEV, Tel. +380 2776, Fax. +380 0461 United Kingdom: Philips Semiconductors Ltd., Bath Road, Hayes, MIDDLESEX 5BX, Tel. 5000, Fax. 8421 United States: East Arques Avenue, SUNNYVALE, 94088-3409, Tel. 7381, Fax. 0087 Uruguay: South America Vietnam: Singapore Yugoslavia: PHILIPS, Pasica 5/v, 11000 BEOGRAD, Tel. +381 5344, Fax.+381 5777
other countries apply Philips Semiconductors, International Marketing Sales Communications, Building BE-p, P.O. 218, 5600 EINDHOVEN, Netherlands, Fax. 24825 Philips Electronics N.V. 1999
Internet:
rights reserved. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice. liability will accepted publisher consequence use. Publication thereof does convey imply license under patent- other industrial intellectual property rights.
Printed Netherlands
115002/00/03/pp12
Date release: 1999
Document order number:
9397 05924

M3D088 PMBD6100 High-speed double diode Product specificatio

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