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Silicon Epitaxial Planar Transistor sAbsolute maximum ratings (Ta=25°C


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(sat)
Silicon Epitaxial Planar Transistor sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO Tstg Ratings 15(Pulse25) 60(Tc=25°C) +150 Unit
2SC4131
Application DC-DC Converter, Emergency Lighting Inverter General Purpose
(Ta=25°C) Ratings 10max 10max 50min 0.5max 1.2max 18typ 210typ
16.2
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO VCE(sat) VBE(sat) Conditions VCB=100V VEB=15V IC=25mA VCE=1V, IC=5A IC=5A, IB=80mA IC=5A, IB=80mA VCE=12V, IE=-1A VCB=10V, f=1MHz
External Dimensions FM100(TO3PF)
0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2
Unit
23.0±0.3
9.5±0.2
1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 5.45±0.1 0.65 +0.2 -0.1
sTypical Switching Characteristics (Common Emitter)
VBB1 VBB2 0.08 -0.08 (µs) 0.5typ tstg (µs) 2.0typ (µs) 0.4typ
3.35
Weight Approx 2.0g Part
Characteristics (Typical)
Collector-Emitter Saturation Voltage
Characteristics (Typical)
Temperature Characteristics (Typical)
=1V)
85mA
80mA
Collector Current
40mA
Collector Current
25mA
15mA
=7mA
0.002
0.01
Base Current
-30°C
25°C
(Cas
Collector-Emitter Voltage
Base-Emittor Voltage
=1V) 1000 1000
=1V)
°C/W)
Characteristics (Typical)
Temperature Characteristics (Typical)
Characteristics
Transient Thermal Resistance
0.02 Collector Current
0.02 Collector Current
Time t(ms)
1000
Characteristics (Typical)
=80mA Collecto Curr
Safe Operating Area (Single Pulse)
Derating
ximum Dissipatio
Switching Time
Without Heatsink Natural Cooling Collector urrent Collector-Emitter Voltage
Without Heatsink
0.08
Ambient Temperature Ta(°C)

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