1512.3 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET

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1512.3 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET

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RFP12N10L
1512.3
12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET
These N-Channel enhancement mode silicon gate power field effect transistors specifically designed with logic level (5V) driving sources applications such programmable controllers, automotive switching solenoid drivers. This performance accomplished through special gate oxide design which provides full rated conduction gate biases range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09526.
Features
12A, 100V rDS(ON) 0.200 Design Optimized Gate Drives Driven Directly from QMOS, NMOS, Circuits Compatible with Automotive Drive Requirements Power-Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance
Ordering Information
PART NUMBER RFP12N10L PACKAGE TO-220AB BRAND F12N10L
Majority Carrier Device Related Literature TB334 "Guidelines Soldering Surface Mount Components Boards
NOTE: When ordering, include entire part number.
Symbol
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE
DRAIN (TAB)
6-224
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. http://www.intersil.com 407-727-9207 Copyright Intersil Corporation 1999
RFP12N10L
Absolute Maximum Ratings
25oC, Unless Otherwise Specified RFP12N10L Drain Source Voltage (Note .VDS Drain Gate Voltage (RGS (Note VDGR Continuous Drain Current Pulsed Drain Current (Note Gate Source Voltage .VGS Maximum Power Dissipation Above 25oC, Derate Linearly Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief Tpkg 0.48 UNITS W/oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 125oC.
Electrical Specifications
PARAMETER
25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS 250mA, VDS, 250mA (Figure 65V, 65V, 125oC 50V, 6.25, (Figures RFP12N10L 2.083 UNITS oC/W
Drain Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
Gate Source Leakage Current Drain Source Resistance (Note Input Capacitance Output Capacitance Reverse-Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Thermal Resistance Junction Case
IGSS rDS(ON) CISS COSS CRSS td(ON) td(OFF)
10V, 12A, (Figures 25V, 1MHz (Figure
Source Drain Diode Specifications
PARAMETER Source Drain Diode Voltage (Note Diode Reverse Recovery Time NOTES: Pulsed: pulse duration 80µs max, duty cycle Repetitive rating: pulse width limited maximum junction temperature. SYMBOL dISD/dt 50A/µs TEST CONDITIONS UNITS
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RFP12N10L Typical Performance Curves
POWER DISSIPATION MULTIPLIER DRAIN CURRENT OPERATION
Unless Otherwise Specified
OPERATION THIS REGION LIMITED rDS(ON) ID(MAX) CONTINUOUS
25oC RATED
CASE TEMPERATURE (oC)
VDS, DRAIN SOURCE VOLTAGE
1000
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
FIGURE FORWARD BIAS OPERATING AREA
ID(ON), ON-STATE DRAIN CURRENT PULSE DURATION 80µs DUTY CYCLE 0.5% 25oC DRAIN CURRENT
PULSE DURATION 80µs DUTY CYCLE 0.5% 25oC 125oC 125oC VDS, DRAIN SOURCE VOLTAGE -40oC
-40oC
VGS, GATE SOURCE VOLTAGE
FIGURE SATURATION CHARACTERISTICS
FIGURE TRANSFER CHARACTERISTICS
NORMALIZED DRAIN SOURCE RESISTANCE rDS(ON), DRAIN SOURCE RESISTANCE 125oC
PULSE DURATION 80µs DUTY CYCLE 0.5%
25oC -40oC
PULSE DURATION 80µs DUTY CYCLE 0.5% DRAIN CURRENT
JUNCTION TEMPERATURE (oC)
FIGURE DRAIN SOURCE RESISTANCE DRAIN CURRENT
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
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RFP12N10L Typical Performance Curves
THRESHOLD VOLTAGE NORMALIZED GATE VDS, DRAIN SOURCE VOLTAGE 250µA CAPACITANCE (pF)
Unless Otherwise Specified (Continued)
1MHz CISS CRSS COSS CISS
COSS CRSS
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE
DRAIN SOURCE VOLTAGE BVDSS 8.33 (REF) 0.56mA
FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE
GATE SOURCE VOLTAGE
GATE BVDSS SOURCE BVDSS VOLTAGE
0.75BVDSS 0.50BVDSS 0.25BVDSS DRAIN SOURCE VOLTAGE (REF) (ACT) TIME (µs) (REF) (ACT)
NOTE: Refer Intersil Applications Notes AN7254 AN7260 FIGURE NORMALIZED SWITCHING WAVEFORMS CONSTANT GATE CURRENT
Test Circuits Waveforms
td(ON)
tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
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RFP12N10L Test Circuits Waveforms
(Continued)
Qg(TOT)
Qg(5) Qg(TH) IG(REF)
IG(REF)
FIGURE GATE CHARGE TEST CIRCUIT
FIGURE GATE CHARGE WAVEFORMS
Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Intersil semiconductor products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
information regarding Intersil Corporation products, site http://www.intersil.com
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1512.3 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET

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